Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of applying a voltage to the polymer film, while at least one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention provides a method for preparing a liquid crystal alignment layer having excellent alignment properties and stability as well as enhanced electrical characteristics such as voltage holding ratio. The present invention also provides a liquid crystal alignment layer prepared by the preparation method above and a liquid crystal display device comprising the liquid crystal alignment layer thus prepared.

Abstract: The present invention provides a liquid crystal alignment film not only having an excellent alignment property and stability, but also having high film strength, and thus exhibiting excellent durability and a high residual image property, a method for preparing the same, and a liquid crystal display device using the same.

Abstract: The present invention relates to a cleaning composition for a liquid crystal alignment layer, a manufacturing method of a liquid crystal alignment layer using the same, and a liquid crystal display device including the liquid crystal alignment layer manufactured by the manufacturing method. More specifically, the present invention relates to a cleaning composition for a liquid crystal alignment layer that is capable of solving a non-uniformity problem of the liquid crystal alignment layer and effectively removing an ionic byproduct on a polymer surface to increase anisotropy of the liquid crystal alignment layer, by using a cleaning composition including a specific solvent in a cleaning process after a UV alignment process, and a manufacturing method of a liquid crystal alignment layer.

Abstract: The present invention provides a liquid crystal alignment film not only having an excellent alignment property and stability, but also having high film strength, and thus exhibiting excellent durability and a high residual image property, a method for preparing the same, and a liquid crystal display device using the same.

Abstract: The present invention relates to a liquid crystal alignment composition for the preparation of a liquid crystal alignment film having enhanced alignment property and stability and exhibiting a high voltage holding ratio, a method for preparing a liquid crystal alignment film using the same, and a liquid crystal alignment film and a liquid crystal display device using the same.

Abstract: Provided are a composition for a liquid crystal alignment agent, a manufacturing method of a liquid crystal alignment film, a liquid crystal alignment film using the same, and a liquid crystal display device including the liquid crystal alignment film. More specifically, there are provided the manufacturing method of a liquid crystal alignment film capable of providing the liquid crystal alignment film in which light irradiation energy is able to be reduced, and alignment characteristic and stability are excellent and the voltage holding ratio and electrical characteristics are also excellent through a simple process including applying and drying the composition for a liquid crystal alignment agent on the substrate, directly performing light irradiation to conduct alignment treatment while a high-temperature heat treatment process is omitted, followed by curing by heat treatment, the liquid crystal alignment film, and the liquid crystal display device including the same.

Abstract: The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.

Abstract: Provided are a method of manufacturing a liquid crystal alignment layer, a liquid crystal alignment layer manufactured by using the same, and a liquid crystal display device including the liquid crystal alignment layer. More specifically, provided are the method of manufacturing the liquid crystal alignment layer with enhanced alignment property and stability, in which a liquid crystal aligning agent is applied onto a substrate, and after drying, alignment treatment is immediately performed by light irradiation while omitting a high-temperature heat treatment process, and then the alignment-treated coating film is cured by heat treatment, thereby reducing light irradiation energy required in the process and simplifying the process by omitting the high-temperature heat treatment process before light irradiation, the liquid crystal alignment layer, and the liquid crystal display device including the same.

Abstract: The present invention relates to a method for preparing a photo-alignment layer. The photo-alignment layer prepared by the preparation method exhibits a high imidization ratio as well as an excellent aligning stability of liquid crystal, chemical resistance and strength, and has an excellent afterimage suppressing effect by an AC driving of a liquid crystal display element.

Abstract: The present invention relates to a liquid crystal aligning agent for use as an alignment layer for liquid crystal display. More specifically, the present invention relates to a liquid crystal aligning agent capable of improving an imidization rate and thus exhibiting an excellent alignment state, a liquid crystal alignment layer comprising the same, a preparation method thereof and a liquid crystal display comprising the liquid crystal alignment layer.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of applying a voltage to the polymer film, while at least one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5° C. to 250° C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

Abstract: The present invention relates to a dicing film including: a substrate film; and a cohesive layer, wherein a storage modulus of the cohesive layer at 30° C. is 3*105 to 4*106 Pa, and the cohesive layer has a degree of cross-linking of 80% to 99%, a dicing die-bonding film including the dicing film, and a dicing method of a semiconductor wafer using the dicing die-bonding film.

Abstract: The present invention relates to an adhesive film for a semiconductor that can more easily bury unevenness such as through wires of a semiconductor substrate or a wire attached to a semiconductor chip and the like, and yet can be applied to various cutting methods without specific limitations to realize excellent cuttability, thus improving reliability and efficiency of a semiconductor packaging process.

Abstract: The present invention relates to an adhesive composition for a semiconductor including: a thermoplastic resin having a glass transition temperature of ?10° C. to 20° C.; a curing agent containing a phenol resin having a softening point of 70° C. or more; a solid epoxy resin; and a liquid epoxy resin, wherein a weight ratio of the total contents of the solid epoxy resin and the liquid epoxy resin to the thermoplastic resin is 1.6 to 2.6, an adhesive film for a semiconductor including the adhesive composition for a semiconductor, a dicing die bonding film including an adhesive layer including the adhesive composition for a semiconductor, and a method for dicing a semiconductor wafer using the dicing die bonding film.

Abstract: Provided are a substrate for an organic electronic device (OED), an OED, and lighting. The substrate capable of forming an OED may have excellent performances including light extraction efficiency and prevent penetration of moisture or a gas from an external environment, and thus an OED having excellent performance and durability may be provided.

Abstract: There are provided a composition for forming an adhesive layer of a dicing film including: a silicon compound oil including at least one reactive functional group; an adhesive binder; and a photoinitiator, wherein a weight ratio of the silicon compound oil including at least one reactive functional group to the adhesive binder is 0.01% to 4.5%, a dicing film including an adhesive layer including the composition, a dicing die bonding film including the dicing film, and a method for dicing a semiconductor wafer using the dicing die bonding film.

Abstract: The present invention relates to a polyamic acid polymer composite and a method for producing the same, and more specifically, a polyamic acid polymer composite, which can be applied to display substrate production due to its high transparency and low thermal expansion of glass-level, and a method for producing same. The polyamic acid polymer composite comprises 50 to 99 wt % of a polyamic acid polymer having a repeating unit of Chemical Formula 1; and 1 to 50 wt % of a silica-based particle: wherein, R1 to R3, m and n have the same meanings as defined in the specification.

Abstract: The present invention relates to a dicing film including: a substrate film; and a cohesive layer, wherein a storage modulus of the cohesive layer at 30° C. is 3*105 to 4*106 Pa, and the cohesive layer has a degree of cross-linking of 80% to 99%, a dicing die-bonding film including the dicing film, and a dicing method of a semiconductor wafer using the dicing die-bonding film.