Abstract: Disclosed herein are a compound represented by Chemical Formula A or Chemical Formula B and an organic light-emitting diode comprising the same.

Abstract: Disclosed herein are an anthracene derivative represented by [Chemical Formula A] and an organic light-emitting diode comprising same. In [Chemical Formula A], the substituents R1 to R5, R, R11 to R18, L1, and n are as defined in the description.

Abstract: The present disclosure relates to an organic light-emitting diode and, more particularly, to an organic-light-emitting diode comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer intercalated between the first electrode and the second electrode, wherein the light-emitting layer comprises at least one of the amine compounds represented by the following Chemical Formula A and at least one of the anthracene compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A to C are the same as in the specification.

Abstract: Disclosed herein are provided an amine compound represented by the following [Chemical Formula A] or [Chemical Formula B], and an organic light-emitting diode comprising the same. wherein, the ring moieties, A1, A2, Q1, Q2, E, F, L1 to L6, Ar1 to Ar4, p1, p2, r1, r2, s1, s2, x, and y are each as defined in the Specification.

Abstract: The present invention relates to an organic light emitting diode comprising: a first electrode; a second electrode facing the first electrode; a hole injecting layer or a hole transport layer, which is interposed between the first electrode and the second electrode; and a light emitting layer, wherein the hole injecting layer or the hole transport layer comprises at least one type of amine compound represented by chemical formula A or chemical formula B, and the chemical formula A and the chemical formula B are the same as those included in the description of the invention.

Abstract: Disclosed herein are an anthracene derivative represented by [Chemical Formula A] and an organic light-emitting diode comprising same. In [Chemical Formula A], the substituents R1 to R5, R, R11 to R18, L1, and n are as defined in the description.

Abstract: The present disclosure relates to an organic compound represented by Chemical Formula A or B, and an organic light-emitting diode comprising the same.

Abstract: The present disclosure relates to an organic light-emitting diode and, more particularly, to an organic-light-emitting diode comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer intercalated between the first electrode and the second electrode, wherein the light-emitting layer comprises at least one of the amine compounds represented by the following Chemical Formula A and at least one of the anthracene compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A to C are the same as in the specification.

Abstract: The present disclosure relates to an organic light-emitting diode and, more particularly, to an organic-light-emitting diode comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer intercalated between the first electrode and the second electrode, wherein the light-emitting layer comprises at least one of the amine compounds represented by the following Chemical Formula A and at least one of the anthracene compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A to C are the same as in the specification.

Abstract: The present disclosure relates to an organic light-emitting diode and, more particularly, to an organic-light-emitting diode comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer intercalated between the first electrode and the second electrode, wherein the light-emitting layer comprises at least one of the amine compounds represented by the following Chemical Formula A and at least one of the anthracene compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A to C are the same as in the specification.

Abstract: Disclosed is an organic light-emitting diode, comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer interposed therebetween, wherein the light-emitting layer contains at least one selected from among the amine compounds represented by the following Chemical Formula A or Chemical Formula B and the pyrene compound represented by the following Chemical Formula C, plus the anthracene compound represented by the following Chemical Formula D. The structures of Chemical Formulas A to D are as defined in the specification.

Abstract: The present invention relates to an organic light emitting diode comprising: a first electrode; a second electrode facing the first electrode; a hole injecting layer or a hole transport layer, which is interposed between the first electrode and the second electrode; and a light emitting layer, wherein the hole injecting layer or the hole transport layer comprises at least one type of amine compound represented by chemical formula A or chemical formula B, and the chemical formula A and the chemical formula B are the same as those included in the description of the invention.

Abstract: The present invention relates to a novel amine compound and an organic light-emitting diode including the same. More particularly, the present disclosure relates to an amine compound that allows for high efficiency and a long lifespan in an organic light-emitting diode if used as an element therein and to an organic light-emitting diode including the same.

Abstract: Disclosed herein are a compound represented by Chemical Formula A or Chemical Formula B and an organic light-emitting diode comprising the same.

Abstract: The present disclosure relates to an organic compound represented by Chemical Formula A or B, and an organic light-emitting diode comprising the same.

Abstract: Disclosed is an organic light-emitting diode, comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer interposed therebetween, wherein the light-emitting layer contains at least one selected from among the amine compounds represented by the following Chemical Formula A or Chemical Formula B and the pyrene compound represented by the following Chemical Formula C, plus the anthracene compound represented by the following Chemical Formula D. The structures of Chemical Formulas A to D are as defined in the specification.

Abstract: Disclosed herein are provided an amine compound represented by the following [Chemical Formula A] or [Chemical Formula B], and an organic light-emitting diode comprising the same. wherein, the ring moieties, A1, A2, Q1, Q2, E, F, L1 to L6, Ar1 to Ar4, p1, p2, r1, r2, s1, s2, x, and y are each as defined in the Specification.

Abstract: An energy storage apparatus has developed for railway vehicles by adopting a bidirectional DC-DC converter to increase the efficiency of charge/discharge, comprising that; a power receiving unit, filter unit, charging unit storage unit having a plurality of super-capacitors, capacitor monitoring unit, a plurality of bidirectional DC-DC converters arranged in parallel, and voltage detector electrically connected to the filter unit, current detector for detecting the currents flowing. The controller further comprises; an analog interface board, signal identifying board, signal control board, digital output contact unit, communicating board, PWM control board, optical output board, external gate driver. The PWM control board includes; a sensor input circuit, A/D converter, calculation unit, calculation control processor, and power monitoring unit.

Abstract: In a semiconductor device and a method of manufacturing the same, the semiconductor device includes a gate structure crossing an active region of a silicon substrate. Spacers are provided on both sides of the gate structure, respectively. Silicon patterns fill up recessed portions of the silicon substrate and on both sides of the spacers and has a shape protruding higher than a bottom surface of the gate structure, a lower edge of the protruded portion partially makes contact with a top surface of the isolation region, a first side and a second side of each of the silicon patterns, which are opposite to each other in a channel width direction in the gate structure, are inclined toward an inside of the active region. A highly doped impurity region is provided in the silicon patterns and doped with an N type impurity. The semiconductor device represents superior threshold voltage characteristics.

Abstract: In a semiconductor device and a method of manufacturing the same, the semiconductor device includes a gate structure crossing an active region of a silicon substrate. Spacers are provided on both sides of the gate structure, respectively. Silicon patterns fill up recessed portions of the silicon substrate and on both sides of the spacers and has a shape protruding higher than a bottom surface of the gate structure, a lower edge of the protruded portion partially makes contact with a top surface of the isolation region, a first side and a second side of each of the silicon patterns, which are opposite to each other in a channel width direction in the gate structure, are inclined toward an inside of the active region. A highly doped impurity region is provided in the silicon patterns and doped with an N type impurity. The semiconductor device represents superior threshold voltage characteristics.