Abstract: The present disclosure relates to an organic compound represented by Chemical Formula A or B, and an organic light-emitting diode comprising the same.

Abstract: Disclosed is an organic light-emitting diode, comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer interposed therebetween, wherein the light-emitting layer contains at least one selected from among the amine compounds represented by the following Chemical Formula A or Chemical Formula B and the pyrene compound represented by the following Chemical Formula C, plus the anthracene compound represented by the following Chemical Formula D. The structures of Chemical Formulas A to D are as defined in the specification.

Abstract: Disclosed herein are provided an amine compound represented by the following [Chemical Formula A] or [Chemical Formula B], and an organic light-emitting diode comprising the same. wherein, the ring moieties, A1, A2, Q1, Q2, E, F, L1 to L6, Ar1 to Ar4, p1, p2, r1, r2, s1, s2, x, and y are each as defined in the Specification.

Abstract: An energy storage apparatus has developed for railway vehicles by adopting a bidirectional DC-DC converter to increase the efficiency of charge/discharge, comprising that; a power receiving unit, filter unit, charging unit storage unit having a plurality of super-capacitors, capacitor monitoring unit, a plurality of bidirectional DC-DC converters arranged in parallel, and voltage detector electrically connected to the filter unit, current detector for detecting the currents flowing. The controller further comprises; an analog interface board, signal identifying board, signal control board, digital output contact unit, communicating board, PWM control board, optical output board, external gate driver. The PWM control board includes; a sensor input circuit, A/D converter, calculation unit, calculation control processor, and power monitoring unit.

Abstract: In a semiconductor device and a method of manufacturing the same, the semiconductor device includes a gate structure crossing an active region of a silicon substrate. Spacers are provided on both sides of the gate structure, respectively. Silicon patterns fill up recessed portions of the silicon substrate and on both sides of the spacers and has a shape protruding higher than a bottom surface of the gate structure, a lower edge of the protruded portion partially makes contact with a top surface of the isolation region, a first side and a second side of each of the silicon patterns, which are opposite to each other in a channel width direction in the gate structure, are inclined toward an inside of the active region. A highly doped impurity region is provided in the silicon patterns and doped with an N type impurity. The semiconductor device represents superior threshold voltage characteristics.

Abstract: In a semiconductor device and a method of manufacturing the same, the semiconductor device includes a gate structure crossing an active region of a silicon substrate. Spacers are provided on both sides of the gate structure, respectively. Silicon patterns fill up recessed portions of the silicon substrate and on both sides of the spacers and has a shape protruding higher than a bottom surface of the gate structure, a lower edge of the protruded portion partially makes contact with a top surface of the isolation region, a first side and a second side of each of the silicon patterns, which are opposite to each other in a channel width direction in the gate structure, are inclined toward an inside of the active region. A highly doped impurity region is provided in the silicon patterns and doped with an N type impurity. The semiconductor device represents superior threshold voltage characteristics.

Abstract: A steel structure including pre-stressing brackets for improving load-carrying capacity and serviceability comprises: a steel girder; a plurality of connecting brackets connected to the bottom surface of the steel girder spaced and apart from one; and a cover plate connected to the bottom surfaces of the connecting brackets. Since the cover plate is installed regardless of the connecting portion of the steel girder, pre-stressing section can be consecutively formed therefore pre-stress effect is improved. Moreover, since the connecting brackets space the cover plate a constant distance from the steel girder, the moment of inertia is increased so the span of a bridge might be increased.

Abstract: An energy storage apparatus has developed for railway vehicles by adopting a bidirectional DC-DC converter to increase the efficiency of charge/discharge, comprising that; a power receiving unit, filter unit, charging unit storage unit having a plurality of super-capacitors, capacitor monitoring unit, a plurality of bidirectional DC-DC converters arranged in parallel, and voltage detector electrically connected to the filter unit, current detector for detecting the currents flowing. The controller further comprises; an analog interface board, signal identifying board, signal control board, digital output contact unit, communicating board, PWM control board, optical output board, external gate driver. The PWM control board includes; a sensor input circuit, A/D converter, calculation unit, calculation control processor, and power monitoring unit.

Abstract: A steel structure including pre-stressing brackets for improving load-carrying capacity and serviceability comprises: a steel girder; a plurality of connecting brackets connected to the bottom surface of the steel girder spaced and apart from one; and a cover plate connected to the bottom surfaces of the connecting brackets. Since the cover plate is installed regardless of the connecting portion of the steel girder, pre-stressing section can be consecutively formed therefore pre-stress effect is improved. Moreover, since the connecting brackets space the cover plate a constant distance from the steel girder, the moment of inertia is increased so the span of a bridge might be increased.