Abstract: A light-emitting diode package includes a package body. The package body includes an upper insulation substrate including upper conductive patterns, a lower insulation substrate including lower conductive patterns, and middle conductive patterns disposed between the upper insulation substrate and the lower insulation substrate. The package body also includes an upper via disposed in the upper insulation substrate, a lower via disposed in the lower insulation substrate, the upper via and the lower via not overlaid with each other.

Abstract: A backlight unit includes a backlight module with a printed circuit board including blocks and MJT LEDs disposed on the blocks, respectively and a backlight control module generating a signal for drive control of each of the blocks, wherein each of the blocks comprises at least one MJT LED, and the backlight control module includes a drive controller for On/Off control and dimming control of each of the blocks.

Abstract: A backlight unit includes a backlight module with a printed circuit board including blocks and MJT LEDs disposed on the blocks, respectively and a backlight control module generating a signal for drive control of each of the blocks, wherein each of the blocks comprises at least one MJT LED, and the backlight control module includes a drive controller for On/Off control and dimming control of each of the blocks.

Abstract: A light-emitting diode package includes a package body. The package body includes an upper insulation substrate including upper conductive patterns, a lower insulation substrate including lower conductive patterns, and middle conductive patterns disposed between the upper insulation substrate and the lower insulation substrate. The package body also includes an upper via disposed in the upper insulation substrate, a lower via disposed in the lower insulation substrate, the upper via and the lower via not overlaid with each other.

Abstract: A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

Abstract: Disclosed is a lighting device having wide light-distribution characteristics. The lighting device includes a base; a protrusion disposed on the base; and a light emitting module disposed on the protrusion; wherein the light emitting module comprises a plurality of light emitting diodes inclined inward with respect to the a protruding direction of the protrusion. Accordingly, the lighting device can provide wide light-distribution characteristics.

Abstract: A light-emitting diode package includes a package body and a light-emitting diode chip disposed on the package body. The package body includes upper conductive patterns disposed on an upper insulation substrate, a lower insulation substrate disposed on lower conductive patterns, and middle conductive patterns disposed between the upper insulation substrate and the lower insulation substrate. The package body also includes upper vias electrically connecting each of the upper conductive patterns to each of the middle conductive patterns, respectively, the upper vias being disposed in the upper insulation substrate, and lower vias electrically connecting each of the middle conductive patterns to each of the lower conductive patterns, respectively, the lower vias disposed in the lower insulation substrate.

Abstract: Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.

Abstract: Disclosed is a lighting device having wide light-distribution characteristics. The lighting device includes a base; a protrusion disposed on the base; and a light emitting module disposed on the protrusion; wherein the light emitting module comprises a plurality of light emitting diodes inclined inward with respect to the a protruding direction of the protrusion. Accordingly, the lighting device can provide wide light-distribution characteristics.

Abstract: A light source module including a circuit board, a first light emitting device mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a reflective portion disposed on the circuit board and having at least one recess accommodating the first light emitting device, and a bonding member disposed between the circuit board and the reflective portion. The reflective portion has a height greater than a height of the first light emitting device.

Abstract: An exemplary embodiment of the present invention discloses a light-emitting diode (LED) chip including a semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first electrode disposed on the semiconductor stacked structure, a wavelength converting layer disposed on the semiconductor stacked structure, and a transparent resin disposed on the wavelength converting layer.

Abstract: Disclosed are a light-emitting device package, a manufacturing method therefor, and a vehicle lamp and a backlight unit including the same. The light-emitting device package includes: a light-emitting chip having electrode pads positioned at a lower part thereof; a wavelength conversion unit for covering at least an upper surface and lateral surfaces of the light-emitting chip; and a reflective part which covers the lateral surfaces of the light-emitting chip. Accordingly, the light-emitting device package can be miniaturized and a separate substrate for forming a lens is not required.

Abstract: A light-emitting diode package includes a package body and a light-emitting diode chip disposed on the package body. The package body includes upper conductive patterns disposed on an upper insulation substrate, a lower insulation substrate disposed on lower conductive patterns, and middle conductive patterns disposed between the upper insulation substrate and the lower insulation substrate. The package body also includes upper vias electrically connecting each of the upper conductive patterns to each of the middle conductive patterns, respectively, the upper vias being disposed in the upper insulation substrate, and lower vias electrically connecting each of the middle conductive patterns to each of the lower conductive patterns, respectively, the lower vias disposed in the lower insulation substrate.

Abstract: A light emitting diode package includes a package body having a cavity, a light emitting diode chip having a plurality of light emitting cells connected in series to one another, a phosphor converting a frequency of light emitted from the light emitting diode chip, and a pair of lead electrodes. The light emitting cells are connected in series between the pair of lead electrodes.

Abstract: Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.

Abstract: Disclosed is a light emitting device having a wavelength converting layer. The light emitting device comprises a plurality of semiconductor stacked structures; connectors for electrically connecting the plurality of semiconductor stacked structures to one another; a single wavelength converting layer for covering the plurality of semiconductor stacked structures; an electrode electrically connected to at least one of the semiconductor stacked structures; and at least one additional electrode positioned on the electrode, passing through the wavelength converting layer to be exposed to the outside, and forming a current input terminal to the light emitting device or a current output terminal from the light emitting device. Since the single wavelength converting layer covers the plurality of semiconductor stacked structures, the plurality of semiconductor stacked structures can be integrally mounted on a chip mounting member such as a package or a module.

Abstract: A light emitting diode package includes a package body having a cavity, a light emitting diode chip having a plurality of light emitting cells connected in series to one another, a phosphor converting a frequency of light emitted from the light emitting diode chip, and a pair of lead electrodes. The light emitting cells are connected in series between the pair of lead electrodes.

Abstract: A light emitting device having a wavelength converting layer. The light emitting device includes a substrate; a semiconductor stack having a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer disposed on the substrate; a first wavelength converting layer covering a top of the semiconductor stack; and a second wavelength converting layer disposed on the first wavelength converting layer and having a width narrower than the first wavelength converting layer. The second wavelength converting layer is employed, thereby being capable of reducing a color variation according to a viewing angle.

Abstract: A light emitting diode package includes a package body having a cavity, a light emitting diode chip having a plurality of light emitting cells connected in series to one another, a phosphor converting a frequency of light emitted from the light emitting diode chip, and a pair of lead electrodes. The light emitting cells are connected in series between the pair of lead electrodes.

Abstract: A light source including a circuit board, at least one light emitting device mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), and a reflective portion formed on the circuit board and enclosing the light emitting device. The reflective portion formed on the circuit board reflects light emitted from the light emitting device in one direction, to reduce light loss while focusing light in a desired direction.