Abstract: A method of manufacturing a microarray includes providing a substrate having a surface that is immobilized with a functional group protected with an acid-labile protecting group and capable of coupling with an oligomer probe, providing a photoacid generator onto the substrate, disposing on the substrate an imprint template comprising a convex region and a plurality of concave regions surrounding the convex region so that the convex region contacts with or is adjacent to an upper surface of the substrate to define a plurality of reaction zones by the upper surface of the substrate and the convex region and the concave regions of the imprint template, exposing one or more of the reaction zones to light so that an acid is generated by the photoacid generator in the one or more exposed reaction zones and a functional group in the one or more exposed reaction zones is deprotected by the acid, and providing an oligomer probe onto the substrate so that the oligomer probe couples with the deprotected functional group

Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

Abstract: An oligomer probe array with improved signal-to-noise ratio includes a substrate, a plurality of probe cell active regions formed on or in the substrate, with each of the plurality of probe cell active regions having a substantially planar surface and being coupled with at least one oligomer probe with own sequence, and a probe cell isolation region defining the probe cell active regions and having no functional groups for coupling with the oligomer probes on a surface.

Abstract: Provided is a substrate for an oligomer probe array to which a photolabile material having an acetylene derivative is directly attached or attached via a linker.

Abstract: A non-linear silicon compound is provided. The non-linear silicon compound may be a non-linear aromatic compound used as a linker for manufacturing an oligomer probe array. The non-linear silicon compound may reduce self-aggregation so as to form a stable and uniform monolayer. As a result, upon hybridization analysis, the fluorescent intensity may be increased.

Abstract: According to some embodiments of the invention, provided herein is a microarray comprising a substrate; a plurality of probe cells formed in the substrate, wherein at least one probe cell includes a linker; and a probe cell separation area. In addition, in some embodiments, the microarray may include a molecular probe coupled to the linker. Related methods are also described herein.

Abstract: An oligomer probe array with improved signal-to-noise ratio and desired detection sensitivity ever when a reduced design rule is employed includes a substrate, a plurality of probe cell active regions formed on or in the substrate, each of the plurality of probe cell active regions having a three-dimensional surface and being coupled, with at least one oligomer probe with its own sequence, and a probe cell isolation region defining the probe cell active regions and having no functional groups for coupling with the oligomer probes on a surface.

Abstract: An oligomer probe array having improved reaction yield is provided. The oligomer probe array includes a substrate, an immobilization layer on the substrate, a plurality of nano particles coupled with a surface of the immobilization layer, and a plurality of oligomer probes coupled with surfaces of the nano particles.

Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

Abstract: A biopolymer synthesis apparatus including at least one chamber in which a biopolymer is to be synthesized includes a chamber body and a chamber cover covering the chamber body, wherein the chamber cover includes at least one through hole at an upper surface thereof, and at least one first fluid-supply pipe coupled with the chamber via the at least one through-hole of the chamber cover.

Abstract: A multifunctional oligomer probe array capable of simultaneously performing different analyses such as gene expression profiling and genotyping includes a substrate, a first array region, a second array region, and a column spacer. The first array region has a plurality of first probe cell active regions, one or more oligomer probes, and a first probe cell defining region, wherein the plurality of first probe cell active regions are disposed on or in the substrate. The second array region has a plurality of second probe cell active regions, one or more oligomer probes, and a second probe cell defining region, wherein the plurality of second probe cell active regions are disposed on or in the substrate. The column spacer prevents cross-talk between a target sample applied to the first array region and another target sample applied to the second array region.

Abstract: A DNA chip includes a substrate, at least one first electrode and at least one second electrode on the substrate, the first electrode and the second electrode being opposite to and separated from each other, multiple oligonucleotide probes, one end of the oligonucleotide probes being immobilized on the first electrode, and a charge-carrier transport layer on the second electrode, the charge-carrier layer contacting an other end of the oligonucleotide probes.

Abstract: A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group.

Abstract: The semiconductor structure includes an etch target layer to be pattemed, a multiple bottom anti-reflective coating (BARC) layer, and a photoresist (PR) pattern. The multiple BARC layer includes a first mask layer formed on the etch target layer and containing carbon, and a second mask layer formed on the first mask layer and containing silicon. A PR layer formed on the multiple BARC layer undergoes photolithography to form the PR pattern on the multiple BARC layer. The multiple BARC layer has a reflectance of 2% or less, and an interface angle between the PR pattern and the multiple BARC layer is 80° to 90°.

Abstract: Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.

Abstract: The present invention provides polymeric films including polymers having an sp3 carbon main frame including a tetrahedral center atom. Methods of forming the same, hard marks including the same and methods of forming fine patterns using the same are also provided.

Abstract: In one aspect, a bottom layer resist polymer has an expanded p-electron conjugation system based on a monomer unit having a 3,3?-diindenyl structure. The bottom layer resist polymer of this aspect is composed of a repeat unit having the 3,3?-diindenyl structure represented by the following formula: where l, m and n are respective mole fractions of monomer units of the polymer, where l+m+n=1, where l=0.1 to 0.9, m=0.1 to 0.9, and n=0 to 0.8, where each of k1 and k2 is independently 0 or 1, and each of R1, R2, R3 and R4 is independently a hydrogen atom or an unsaturated hydrocarbon, and where Z is a monomer unit including a bisphenol derivative.

Abstract: Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03?m/(m+n+q)?0.97, 0.03?n/(m+n+q)?0.97, 0?q/(m+n+q)?0.5; and wherein the solvent includes deionized water.

Abstract: Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.

Abstract: Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.