Abstract: Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

Abstract: Provided are a mask pattern including a self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on at least a sidewall of the resist pattern. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

Abstract: A template, a method of forming the template and a method of forming a photoresist pattern using a lithographic template is disclosed. In the method, a photoresist film is formed on a substrate. A template for selectively transmitting light is pressed on the photoresist film. The template includes a transparent plate through which light passes, a blocking pattern formed thereon for selectively blocking the light passing through the transparent plate, and a plurality of concave and convex portions for imprinting the photoresist film. The concave and convex portions are formed in accordance with the blocking pattern. The photoresist film is partially exposed to light selectively passing through the template, and the photoresist film that has been exposed to the light is also partially developed to form the photoresist pattern.