Abstract: An image sensor and method, which includes a switching device for establishing a connection between at least one column line and one of at least two analog-to-digital converter blocks, where at least one of the at least two analog-to-digital converter blocks is connectable to at least two rows of a plurality of unit pixels. An image sensor and method, where, if a row line is odd, column outputs from odd column lines of an active pixel sensor array are connected to a first correlated double sampling block and column outputs from even column lines of the active pixel sensor array are connected to a second correlated double sampling block and if the row line is even, column outputs from odd column lines of the active pixel sensor array are connected to the second correlated double sampling block and column outputs from even column lines of the active pixel sensor array are connected to the first correlated double sampling block.

Abstract: An electrical test system includes a test head, a performance board, a probe card and coaxial cables. The performance board includes a first side and an opposite second side, where the first side of the performance board is electrically connected to the test head and the second side of the performance board includes first coaxial cable connection portions. The probe card includes a first side and an opposite second side, where the first side of the probe card includes second coaxial cable connection portions and the second side includes a wafer test probes.

Abstract: Provided is a complementary metal oxide semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array unit having a matrix-type array of unit pixels, each unit pixel including a charge transfer element transferring charge collected in a photoelectric conversion element to a charge detection element. The charge transfer element also receives a boosted voltage signal higher than an external power voltage.

Abstract: A one-step diagnostic device for simultaneously detecting and distinguishing between a normal pregnancy and an ectopic pregnancy and methods for preparing the device are disclosed. Utilizing the device and principles of the present invention, normal pregnancy and ectopic pregnancy can be rapidly and accurately determined at an early stage by immunologically detecting the morphological differences between human chorionic gonadotropin (hCG) and modified forms thereof, which are secreted into the body fluid of a pregnant female.

Abstract: An image sensor includes a photosensitive element that generates an electrical signal corresponding to light incident thereon and a ramp signal generator that generates a ramp signal. Generation of the ramp signal is initiated in response to activation of a ramp enable signal. An offset adjusting circuit generates a counter enable signal after activation of the ramp enable signal and after initiating generation of the ramp signal. A counter initiates counting responsive to generation of the counter enable signal. A latch latches a counter output responsive to a comparison of the ramp signal and the electrical signal corresponding to light incident on the photosensitive element. Related methods are also discussed.

Abstract: An image sensor includes a photosensitive element that generates an electrical signal corresponding to light incident thereon and a ramp signal generator that generates a ramp signal. Generation of the ramp signal is initiated in response to activation of a ramp enable signal. An offset adjusting circuit generates a counter enable signal after activation of the ramp enable signal and after initiating generation of the ramp signal. A counter initiates counting responsive to generation of the counter enable signal. A latch latches a counter output responsive to a comparison of the ramp signal and the electrical signal corresponding to light incident on the photosensitive element. Related methods are also discussed.

Abstract: An image sensor includes a photosensitive element that generates an electrical signal corresponding to light incident thereon and a ramp signal generator that generates a ramp signal. Generation of the ramp signal is initiated in response to activation of a ramp enable signal. An offset adjusting circuit generates a counter enable signal after activation of the ramp enable signal and after initiating generation of the ramp signal. A counter initiates counting responsive to generation of the counter enable signal. A latch latches a counter output responsive to a comparison of the ramp signal and the electrical signal corresponding to light incident on the photosensitive element. Related methods are also discussed.

Abstract: A CMOS image capture device includes an array of pixel elements configured to convert an image received as light at a surface thereof into analog output signals. An image processing circuit is also provided. The image processing circuit is configured to generate digital output signals from which the image can be recreated in response to the analog output signals. The image processing circuit has self-adjustable gain characteristics. The image processing circuit includes a ramp signal generator having an integration circuit therein with an adjustable RC time constant. The integration circuit includes an operational amplifier and a resistor array and/or a capacitor array electrically coupled to the operational amplifier. This resistor array and/or capacitor array enables the adjustable RC time constant.

Abstract: Provided are a complementary metal oxide semiconductor (CMOS) image sensor including two types of device isolation regions and a method of fabricating the same.

Abstract: A CMOS image capture device includes an array of pixel elements configured to convert an image received as light at a surface thereof into analog output signals. An image processing circuit is also provided. The image processing circuit is configured to generate digital output signals from which the image can be recreated in response to the analog output signals. The image processing circuit has self-adjustable gain characteristics. The image processing circuit includes a ramp signal generator having an integration circuit therein with an adjustable RC time constant. The integration circuit includes an operational amplifier and a resistor array and/or a capacitor array electrically coupled to the operational amplifier. This resistor array and/or capacitor array enables the adjustable RC time constant.

Abstract: A color image sensing device capable of summing up pixel data representing the same color and outputting the summed data includes an APS array, a plurality of column selectors, a plurality of analog-digital converters, and a signal processor. The APS array includes a first plurality of column arrays in which a first plurality of red pixels and a first plurality of green pixels are alternately arranged in vertically spaced columns and a second plurality of column arrays in which a second plurality of green pixels and a second plurality of blue pixels are alternately arranged in vertically spaced columns. The first and second column arrays are alternately arranged in horizontally spaced rows. The plurality of column selectors are connected to the column arrays, wherein the column selectors are divided into a first group and a second group, wherein the first group is disposed on a first side of the APS array and the second group is disposed on a second side of the APS array.

Abstract: An image sensor and a method of fabricating the image sensor are provided. The image sensor includes a semiconductor substrate having a first conductivity type, a deep well having a second conductivity type. The deep well is formed at a predetermined depth in the semiconductor substrate to divide the semiconductor substrate into a first conductivity type upper substrate area and a lower substrate area. The image sensor further includes a plurality of unit pixels integrating charges corresponding to incident light and comprising first conductivity type ion-implantation areas. The first conductivity type ion-implantation areas are separated from one another. Moreover, at least one unit pixel among the plurality of unit pixels further comprises the first conductivity type upper substrate area that is positioned under a first conductivity type ion-implantation area included in the unit pixel.

Abstract: The present invention relates to a variable region of the monoclonal antibody against the S-surface antigen of hepatis B virus and a gene encoding the same, a recombinant vector containing the said gene, and a transformant obtained from the said recombinant vector.

Abstract: Low-power and low-noise CDS (correlated double sampling) comparators for use with a CIS (CMOS image sensor) device are provided. A CDS comparator is constructed using one of various low-power inverters that provide decreased instantaneous transition currents at a logic threshold voltage. The use of such low-power inverters in CDS comparators enables a significant reduction in power consumption and noise in the CIS device, or other devices that implement such CDS comparators and/or inverters.

Abstract: The present disclosure relates to a wafer burn-in system having a device cooling a probe card and thereby restraining heat accumulation in the probe card. The disclosed wafer burn-in system includes a probe station and a tester. The probe station includes a burn-in chamber, a probe head, and a wafer stage. The probe head has a probe card installed on the lower surface of the probe head. A cooling device restrains heat accumulation in the probe card, e.g., by generating airflow around the probe card. The wafer stage of the burn-in chamber fixes a wafer loaded on the upper surface of the wafer stage and elevates the wafer for contact with the probe card. The tester connects to the probe station through a general purpose interface bus (GPIB) to convey test signals to and from the probe head, and to control operation of the cooling device. The tester activates the cooling device, e.g.

Abstract: A CMOS image sensor includes first pairs of light-receiving elements sharing an output circuit and second pairs of light-receiving elements sharing an output circuit arranged in a first direction forming a first row and a second row respectively, wherein the first pairs include respective a first and a second light-receiving element and the second pairs include a third and a fourth light-receiving element. A plurality of the first rows and a plurality of second rows are interlaced, wherein color filters are formed on each of the first through the fourth light-receiving elements forming a color combination unit and the color filters of the same color are formed on respective light-receiving elements where charges generated in each of the respective light-receiving elements are transferred in the same direction. The pixel regions having color filters of the same color, are separated by a substantially uniform distance from one another.

Abstract: An image device comprises an image sensor including an array of photodiodes for converting an optical image into electrical signals, a color filter comprising an array of red, green and cyan filter elements disposed opposite the array of photodiodes, and a color processor for color processing the electrical signals.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor and a method for operating the same are provided. The CMOS image sensor includes a pixel array unit having a matrix of pixels, wherein each pixel comprises a charge transfer element for transferring charge collected in a photoelectric conversion element to a charge detection element, and a row drive unit for supplying a voltage to the charge transfer element during part of a charge integration period of the photoelectric conversion element, wherein the supplied voltage causes the charge transfer element to have a negative potential.

Abstract: Provided is a complementary metal oxide semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array unit having a matrix-type array of unit pixels, each unit pixel including a charge transfer element transferring charge collected in a photoelectric conversion element to a charge detection element. The charge transfer element also receives a boosted voltage signal higher than an external power voltage.

Abstract: For performing image correction in an imaging device, a defect unit of the imaging device has at least one defective pixel each generating a respective defective output signal. In addition, a controller determines whether to correct image output signals from an image pixel array of the imaging device depending on the at least one defective output signal from the defect unit. The defect unit is fabricated in a dark region of the imaging device with the respective defective output signal varying with temperature.