Abstract: A fuel cell system includes a fuel cell stack including an air electrode and a fuel electrode, a stack housing having a hollow therein to accommodate the fuel cell stack in the hollow, an air compressor configured to pump air to supply the air to the air electrode, a ventilation pipe connecting an entrance of the air compressor and the hollow, and at least one vent hole provided on an outer wall of the stack housing such that the hollow and an outside of the stack housing communicate with each other. An interior of the stack housing is ventilated by lowering of a pressure at the entrance of the air compressor, which is generated as the air compressor is operated, while air outside the stack housing is suctioned into the entrance of the air compressor after passing through the vent hole, the hollow, and the ventilation pipe.

Abstract: A semiconductor device includes a substrate of a first conductivity type, a gate electrode on the substrate, a first high concentration impurity region of the first conductivity type that is disposed on a first side of the gate electrode, a first well of the first conductivity type that is disposed under the first high concentration impurity region and surrounds the first high concentration impurity region, a second well of a second conductivity type that overlaps with a portion of the gate electrode and is adjacent to the first well, and a first deep well of the second conductivity type that is disposed under the first well and the second well, the first deep well and the first high concentration impurity region being responsive to a first voltage.

Abstract: The invention described in the application relates to a long non-coding RNA expressed in cancer. The invention thus provides methods and compositions for evaluating levels of the long non-coding RNA to assess the aggressiveness of a cancer and for modulating levels of the long non-coding RNA.

Abstract: Methods and structures for forming epitaxial layers of Ill-nitride materials on patterned foreign substrates with low stacking fault densities are described. Semipolar and nonpolar orientations of GaN that are essentially free from stacking faults may be grown from crystal-growth facets of a patterned substrate. Etching can be used to remove stacking faults if present. Crystal growth with an impurity can eliminate crystal growth from a facet that is responsible for stacking fault formation and permit substantially stacking-fault-free growth of the Ill-nitride material.

Abstract: A circuit board is disclosed. In addition to insulating layers, the circuit board includes a structure for heat transfer that includes a first layer that is formed of graphite or graphene, a second layer that is formed of metallic material and disposed on one surface of the first layer, and a third layer that is formed of metallic material and disposed on the other surface of the first layer, and at least a portion of the structure for heat transfer is inserted into an insulation layer. Such a circuit board provides improved heat management. Also disclosed is a method of manufacturing the circuit board.

Abstract: This application relates to a liquefied natural gas storage apparatus. The apparatus includes a heat insulated tank and liquefied natural gas contained in the tank. The tank has heat insulation sufficient to maintain liquefied natural gas therein such that most of the liquefied natural gas stays in liquid. The contained liquefied natural gas has a vapor pressure from about 0.3 bar to about 2 bar. The apparatus further includes a safety valve configured to release a part of liquefied natural gas contained in the tank when a vapor pressure of liquefied natural gas within the tank becomes higher than a cut-off pressure. The cut-off pressure is from about 0.3 bar to about 2 bar.

Abstract: According to an example, a printing apparatus may include a first output bin, a second output bin, a first light source positioned to illuminate a portion of the first output bin, a second light source positioned to illuminate a portion of the second output bin, and a controller. The controller may activate the first light source in response to a media being outputted to the first output bin and may activate the second light source in response to a media being outputted to the second output bin to direct a user to the first output bin and/or the second output bin containing a most recently printed media.

Abstract: A semiconductor substrate includes a plurality of gate electrodes crossing active patterns on a substrate and extending in a second direction, the gate electrodes spaced apart in the second direction from each other, a gate separation pattern having a major axis in the first direction and between two of the gate electrodes, the two of the gate electrodes adjacent to each other in the second direction, and a plurality of gate spacers covering sidewalls of respective ones of the gate electrodes, the gate spacers crossing the gate separation pattern and extending in the second direction. The gate separation pattern includes a lower portion extending in the first direction, an intermediate portion protruding from the lower portion and having a first width, and an upper portion between two adjacent gate spacers and protruding from the intermediate portion, the upper portion having a second width less than the first width.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

Abstract: A laser welding apparatus for laser-welding a first welding target and a second welding target seated on the first welding target includes a first jig on which the first welding target is seated, a second jig configured to press the first welding target such that the first welding target is adhered to the first jig, a third jig configured to press the second welding target such that the second welding target is adhered to the first welding target, one or more connection members connecting the second jig and the third jig such that the second welding target is pressed by the second jig when the first welding target is pressed by the first jig, and a laser head configured to laser-weld the first welding target and the second welding target by irradiating a laser beam to a specific welding part of the second welding target.

Abstract: An antenna module includes a magnetic body portion made of a ferrite sheet, a first pattern portion directly formed on one surface of the magnetic body portion and including a first pattern and a first plating layer stacked thereon, a second pattern portion directly formed on the other surface of the magnetic body portion and including a second pattern and a second plating layer stacked thereon, and a via hole formed through the magnetic body portion and having a connection member for electrically connecting the first pattern portion and the second pattern portion formed therein. The first pattern portion and the second pattern portion are formed directly on the magnetic body portion without a substrate portion. Thus, the thickness is reduced by the amount of the thickness of the substrate portion.

Abstract: Provided is a device and method for generating a graphic user interface (GUI) for controlling a plurality of external devices. The device includes a communication interface configured to communicate with the plurality of external devices and download a plurality of control applications to control the plurality of external devices, a processor configured to collect, from the plurality of downloaded control applications, function information to control the plurality of external devices, and configured to provide an integrated application to control the plurality of external devices by using the collected function information, and a display displaying the GUI for controlling the plurality of external devices when the integrated application is executed.

Abstract: The present invention relates to a cathode active material for a lithium secondary battery, and more particularly, to a cathode active material for a lithium secondary battery, which includes a core portion and a shell portion surrounding the core portion, in which a total content of cobalt in the core portion and the shell portion is 5 to 12 mol %, and the content of cobalt in the core portion and the shell portion is adjusted to be within a predetermined range. In the cathode active material precursor and the cathode active material for a secondary battery prepared using the same according to the present invention, optimal capacity of a lithium secondary battery may be increased by adjusting the cobalt content in the particles of the cathode active material, and life characteristics may be enhanced by improving stability.

Abstract: Aspects of the disclosure provide for mechanisms for fabricating nonpolar or semipolar light-emitting devices. In accordance with some embodiments, a light-emitting device may include: a first semiconductor layer comprising a first epitaxial layer of a group III-nitride material, a second semiconductor layer comprising at least one quantum well structure, and a third semiconductor layer comprising a second epitaxial layer of the group III-nitride material. The first epitaxial layer and the second epitaxial layer may be an n-type GaN layer and a p-type GaN layer, respectively. In some embodiments, a surface of the first epitaxial layer of the group III-nitride material is approximately parallel to a semipolar plane of the group III-nitride material. In some embodiments, a surface of the second semiconductor layer is approximately parallel to the semipolar plane of the group III-nitride material. The semipolar plane may be a (2021), (2021), (3031), or (3031) plane.

Abstract: Aspects of the disclosure provide for mechanisms for producing group III-nitride substrates. In accordance with some embodiments, a method for producing a group III-nitride substrate is provided. The method may include: forming, on a growth template, an epitaxial layer of a group III-nitride material comprising a surface with a first crystallographic orientation, wherein the first crystallographic orientation comprises a semipolar orientation or a nonpolar orientation; and separating the epitaxial layer of the group III-nitride material from the growth template to produce the group III-nitride substrate, wherein the growth template comprises a semiconductor layer of the group III-nitride material. The group III-nitride material may include gallium.

Abstract: An image scanning apparatus includes a converter to convert a signal generated by an image sensor scanning an image, into a digital signal, a processor to control the converter to convert the signal into the digital signal using a plurality of control signals communicable between the converter and the processor, and a reset circuit to generate a reset signal to reset the converter based on at least one control signal of the plurality of control signals.

Abstract: The present invention relates to a cathode active material composition for a lithium secondary battery and a lithium secondary battery including the same, and more particularly, to a cathode active material composition for a lithium secondary battery, including a mixture of particles which are different in Ni composition and size and prepared at the same heat treatment temperature, and a lithium secondary battery including the same. According to the present invention, optimal capacity manifestation temperatures of a coarse particle and a fine particle may be adjusted to be similar by adjusting an Ni content of the coarse particle and the fine particle, and thus, a lithium secondary battery having enhanced output and lifetime may be manufactured.

Abstract: The present invention relates to an olefin-based copolymer having novel crystalline properties and capable of providing a molded article with further improved strength and impact strength when compounded with other resins, and a method for preparing the same. The olefin-based copolymer is an olefin-based copolymer comprising an ethylene repeating unit and an ?-olefinic repeating unit. The olefin-based copolymer comprises polymer fractions defined by three different peaks at a predetermined temperature when analyzed by cross-fractionation chromatography.