Patents by Inventor Jung-Min Ha

Jung-Min Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a capacitor and a capacitor electrode in semiconductor device
    Patent number: 5970309
    Abstract: A method of manufacturing a semiconductor capacitor electrode by growing a metal compound layer over polysilicon storage nodes. The metal compound layer readily growing on the polysilicon storage nodes, but not on portions of an insulating layer between adjacent polysilicon storage nodes.
    Type: Grant
    Filed: October 15, 1997
    Date of Patent: October 19, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-min Ha, Byung-lyul Park, Dae-hong Ko, Sang-in Lee
  • Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film
    Patent number: 5723384
    Abstract: There is provided a method for manufacturing a capacitor in a semiconductor device including the steps of forming first and second insulating layers with a first contact hole through to a semiconductor substrate, patterning a first conductive layer to form a pedestal portion of a lower electrode, using a patterned third insulating layer selectively forming an upper portion of the lower electrode from a tungsten nitride thin film, and forming an undercut beneath the pedestal portion by wet-etching the second insulating layer.
    Type: Grant
    Filed: September 13, 1996
    Date of Patent: March 3, 1998
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-lyul Park, Jung-min Ha, Dae-hong Ko, Sang-in Lee