Patents by Inventor Jung-Won Park

Jung-Won Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9719714
    Abstract: A refrigerator and a dehumidification control method thereof to effectively perform both temperature compensation and dehumidification so as to prevent formation of dewdrops in a refrigerating compartment of the refrigerator. The control method includes detecting a temperature of outside air around the refrigerator to judge whether or not the detected temperature corresponds to a low-temperature mode requiring dehumidification, heating a refrigerating compartment by operating a refrigerating compartment heater and a refrigerating compartment fan for dehumidification if the low-temperature mode is judged, cooling the refrigerating compartment by operating a compressor while continuously operating the refrigerating compartment fan, and simultaneously cooling and heating the refrigerating compartment to enable simultaneous implementation of temperature compensation by heating of the refrigerating compartment and dehumidification by cooling of the refrigerating compartment.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: August 1, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Han Kim, Kook Jeong Seo, Jung Won Park
  • Patent number: 9492866
    Abstract: The present invention relates to a belt-shaped metal nanostructure in which a wide surface area of catalytically active material can be realized even by a relatively small amount thereof so that it shows an excellent catalytic activity, and a method for preparing same.
    Type: Grant
    Filed: March 10, 2011
    Date of Patent: November 15, 2016
    Assignee: LG Chem, Ltd.
    Inventors: Won-Jong Kwon, Gyo-Hyun Hwang, Sang-Uck Lee, Hyuk Kim, Jung-Won Park, Sung-Ho Yoon, Kyung-Hoon Lee
  • Publication number: 20160243509
    Abstract: A carbonated water production unit for a refrigerator includes a coupler to which a container is coupled to be detachable, a cylinder configured to store carbon dioxide, a nozzle module configured to inject carbon dioxide into the container, a regulation member, a first valve, a second valve, a user interface which receives a command for production of carbonated water and an input of concentration of the carbonated water, and a controller which controls the first valve to supply water when the command for the production of carbonated water is input, determines information on injection of the carbon dioxide corresponding to the concentration of the carbonated water when the supply of water is completed, controls the regulation member to inject the carbon dioxide based on the determined information on the injection, and controls the second valve to regulate the pressure of the container when injection of the carbon dioxide is completed.
    Type: Application
    Filed: February 17, 2016
    Publication date: August 25, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Wan KANG, Jung Won PARK, Sung Ho CHO
  • Publication number: 20160238310
    Abstract: A refrigerator includes a mixing container in which carbon dioxide and purified water are mixed and carbonated water is prepared, a mounting body on or from which the mixing container is mountable or detachable, a first dispenser assembly which injects the carbon dioxide and the purified water into the mixing container when the mixing container is mounted on the mounting body, and a user interface which outputs information on whether the mixing container is mounted on the mounting body.
    Type: Application
    Filed: February 16, 2016
    Publication date: August 18, 2016
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Soo Kang KIM, Jung Won PARK, Sung Ho CHO, Seung Wan KANG
  • Publication number: 20150327708
    Abstract: Cookware comprises a main body and a heat transferred part. The main body includes a cooking space. The heat transferred part is disposed under the main body. A flame is transferred to the heat transferred part. A plurality of flame transfer grooves are formed in the heat transferred part.
    Type: Application
    Filed: July 1, 2014
    Publication date: November 19, 2015
    Inventor: JUNG WON PARK
  • Publication number: 20150263228
    Abstract: Disclosed is a nitride semiconductor light-emitting device having excellent brightness and ESD protection properties. The nitride semiconductor light-emitting device according to the present invention includes an electron blocking layer that is disposed between a p-type nitride semiconductor layer and an active layer, wherein said electron blocking layer includes AlInGaN, and the concentration of indium increases in the electron blocking layer as said layer progressively moves away from the active layer.
    Type: Application
    Filed: October 15, 2013
    Publication date: September 17, 2015
    Inventors: Won-Yong Lee, Jung-Won Park, Sung-Hak Lee, Tae-Wan Kwon, Won-Jin Choi
  • Patent number: 9099600
    Abstract: Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading part, which is formed from nitride comprising current spreading impurities, and which is disposed on the n-type nitride layer; an activation layer disposed on the current spreading part; and a p-type nitride layer disposed on the activation layer, wherein the current spreading impurities comprise carbon (C).
    Type: Grant
    Filed: August 2, 2012
    Date of Patent: August 4, 2015
    Assignee: ILJIN LED CO., LTD.
    Inventors: Won-Jin Choi, Jung-Won Park
  • Patent number: 9082642
    Abstract: Disclosed is a semiconductor device, including: an active region defined in a shape extended in at least four different directions in a semiconductor substrate; and gates of first to fourth transistors formed on extended portions of the active region, respectively, in which the first to fourth transistors share one junction area.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: July 14, 2015
    Assignee: SK Hynix Inc.
    Inventors: Hyun Sub Kim, Jung Won Park
  • Publication number: 20150160675
    Abstract: A demand response (DR) system includes a DR control unit to generate different DR levels having different power rates for each power unit, and transmit a current DR level, and a household appliance to receive the DR level from the DR control unit, and differentially control energy output of a product in response to the received DR level so as to reduce power consumption of the product. As a result, the DR system reduces power consumption when power rates are high so as to reduce electricity bills.
    Type: Application
    Filed: February 13, 2015
    Publication date: June 11, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun Ki KIM, Jae Min LIM, Seong Uk PYUNG, Sun Il JIN, Hyeng Kyun KIM, Jae Yu SEO, Seong Wook JEONG, Sung Ho CHO, Jung Won PARK, Jang Beom YANG, Chang Ho SON, Young Jin BAEK
  • Patent number: 9006779
    Abstract: Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises: a current blocking part disposed between a substrate and an n-type nitride layer; an activation layer disposed on the top surface of the n-type nitride layer; and a p-type nitride layer disposed on the top surface of the activation layer, wherein the current blocking part is an AlxGa(1-x)N layer, and the Al content x times layer thickness (?m) is in the range of 0.01-0.06. Accordingly, the nitride semiconductor light-emitting element can increase the luminous efficiency by having a current blocking part which prevents current leakage from occurring.
    Type: Grant
    Filed: August 2, 2012
    Date of Patent: April 14, 2015
    Assignee: Iljin Led Co., Ltd.
    Inventors: Won-Jin Choi, Jung-Won Park
  • Patent number: 8983672
    Abstract: A demand response (DR) system includes a DR control unit to generate different DR levels having different power rates for each power unit, and transmit a current DR level, and a household appliance to receive the DR level from the DR control unit, and differentially control energy output of a product in response to the received DR level so as to reduce power consumption of the product. As a result, the DR system reduces power consumption when power rates are high so as to reduce electricity bills.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: March 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyun Ki Kim, Jae Min Lim, Seong Uk Pyung, Sun Il Jin, Hyeng Kyun Kim, Jae Yu Seo, Seong Wook Jeong, Sung Ho Cho, Jung Won Park, Jang Beom Yang, Chang Ho Son, Young Jin Baek
  • Patent number: 8930033
    Abstract: A demand response (DR) system, computer-readable medium and method are disclosed. The DR system controls a high-power-consumption load to be pre-operated or post-operated in a low-power-rate interval instead of a high-power-rate interval, and reduces an amount of power consumption required for a high-power-rate interval, resulting in reduction of power rates. In addition, limitation to household appliance operation is minimized, to greatly reduce inconvenience of a user.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: January 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang Beom Yang, Jung Won Park, Seong Wook Jeong, Chang Hern Lee, Seong Chan Gim, Young Ho Jang, Jae Min Lim, Sung Ho Cho, Sun Il Jin, Chang Ho Son, Young Jin Baek
  • Publication number: 20140369121
    Abstract: Disclosed is a semiconductor device, including: an active region defined in a shape extended in at least four different directions in a semiconductor substrate; and gates of first to fourth transistors formed on extended portions of the active region, respectively, in which the first to fourth transistors share one junction area.
    Type: Application
    Filed: October 2, 2013
    Publication date: December 18, 2014
    Applicant: SK hynix Inc.
    Inventors: Hyun Sub KIM, Jung Won PARK
  • Publication number: 20140339598
    Abstract: The present invention relates to a nitride-semiconductor light-emitting element in which a p-type nitride layer is doped with carbon, and to a production method therefor. More specifically, the present invention relates to a nitride-semiconductor light-emitting element comprising a p-type nitride layer formed from a nitride having a high concentration of free holes as the carbon is auto-doped in accordance with adjustment of the rate of flow of a nitrogen source. The nitride-semiconductor light-emitting element of the present invention can provide a high free-hole concentration, which is difficult to achieve with conventional single p-type dopants, and can therefore lower the resistance and increase the light efficiency of the light-emitting element.
    Type: Application
    Filed: December 27, 2012
    Publication date: November 20, 2014
    Applicant: ILJIN LED CO.,LTD.
    Inventors: Jung-Won Park, Sung-Hak Yi, Tae-Wan Kwon
  • Patent number: 8816323
    Abstract: The nitride-based light emitting device according to one embodiment includes a first nitride semiconductor layer doped with a first conductive impurity; a strain buffer layer formed on the first nitride semiconductor layer and comprised of InGaN; an active layer formed on the strain buffer layer and having a multi-quantum well structure in which a quantum-well layer and a quantum-barrier layer are alternately stacked one above another; and a second nitride semiconductor layer formed on the active layer and doped with a second conductive impurity opposite to the first conductive impurity, wherein the ratio B/A satisfies 1.4<B/A<6.1, where A is the product of an average indium content of the strain buffer layer and a thickness of the strain buffer layer and B is the product of an average indium content of the active layer and a thickness of the active layer.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: August 26, 2014
    Assignee: Iljin LED Co., Ltd.
    Inventors: Jung-Won Park, Sung-Hak Lee
  • Publication number: 20140191193
    Abstract: Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading part, which is formed from nitride comprising current spreading impurities, and which is disposed on the n-type nitride layer; an activation layer disposed on the current spreading part; and a p-type nitride layer disposed on the activation layer, wherein the current spreading impurities comprise carbon (C).
    Type: Application
    Filed: August 2, 2012
    Publication date: July 10, 2014
    Applicant: ILJIN LED CO., LTD.
    Inventors: Won-Jin Choi, Jung-Won Park
  • Publication number: 20140167067
    Abstract: Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises: a current blocking part disposed between a substrate and an n-type nitride layer; an activation layer disposed on the top surface of the n-type nitride layer; and a p-type nitride layer disposed on the top surface of the activation layer, wherein the current blocking part is an AlxGa(1-x)N layer, and the Al content x times layer thickness (?m) is in the range of 0.01-0.06. Accordingly, the nitride semiconductor light-emitting element can increase the luminous efficiency by having a current blocking part which prevents current leakage from occurring.
    Type: Application
    Filed: August 2, 2012
    Publication date: June 19, 2014
    Applicant: ILJIN LED CO., LTD.
    Inventors: Won-Jin Choi, Jung-Won Park
  • Publication number: 20140053581
    Abstract: A cooling apparatus includes a storage compartment, an evaporator to cool air in the storage compartment by evaporating a refrigerant, a compressor to compress the refrigerant evaporated by the evaporator, an air blower to supply the air cooled by the evaporator to the storage compartment and to remove frost formed on the evaporator, a storage temperature sensor to sense a temperature of the storage compartment, a driving unit to drive the compressor and the air blower, and a controller to perform a defrosting operation of operating the air blower to remove frost formed on the evaporator when a cooling operation of cooling the storage compartment is terminated and to perform the cooling operation, wherein the controller defers, when the defrosting operation is being performed, operation of the compressor, even if the temperature of the storage compartment is greater than or equal to the storage upper limit temperature.
    Type: Application
    Filed: August 27, 2013
    Publication date: February 27, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Ho Cho, Woo Sung Kim, Won Je Lee, Yong Han Kim, Jung Won Park, Seong Wook Jeong, Sang Youl Cha
  • Patent number: 8399883
    Abstract: The present invention provides a nitrogen-oxide gas sensor that is able to measure nitric oxide and nitrogen dioxide at the same time and ensure measurement accuracy and long stability. For these purposes, the nitrogen-oxide gas sensor includes: an oxide ion conductive solid electrolyte; a primary film that contacts the solid electrolyte and is made of a p-type semi-conductor metal oxide; a secondary film that contacts the solid electrolyte and is made of a p-type semiconductor metal oxide; an n-type semiconductor metal oxide that is included in at least one of the primary and secondary films; a power source that applies electric power to the primary and secondary films by electrically connecting a primary node to the primary film and a secondary node to the secondary film; and a measurement unit that measures the electric potential difference between the primary and secondary nodes.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: March 19, 2013
    Assignees: Iljin Copper Foil Co., Ltd., Cios Inc.
    Inventors: Jin Su Park, Byung Young Yoon, Jung Won Park, Jung Hwan Cho, Sang Beom Kim
  • Patent number: 8351638
    Abstract: A portable terminal with a speaker device includes a body housing, and a speaker module provided in the body housing and slidably retracted or extracted into/from the body housing. The speaker module includes a speaker housing slidably settled in the body housing, guide rails provided in the body housing, for sliding the speaker housing, at least one guide protrusion provided on the speaker housing and slidably engaged with the guide rails, and a moving member protruding from the speaker housing to an outside of the body housing, for retracting or extracting the speaker housing into/from the body housing.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: January 8, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jung-Won Park