Patents by Inventor Jung Won Seo

Jung Won Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transparent memory for transparent electronic device
    Patent number: 8426841
    Abstract: The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.
    Type: Grant
    Filed: July 23, 2009
    Date of Patent: April 23, 2013
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Jung Won Seo, Keong Su Lim, Jae Woo Park, Ji Hwan Yang, Sang Jung Kang
  • Transparent Memory for Transparent Electronic Device
    Publication number: 20120132882
    Abstract: The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.
    Type: Application
    Filed: July 23, 2009
    Publication date: May 31, 2012
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jung Won Seo, Keong Su Lim, Jae Woo Park, Ji Hwan Yang, Sang Jung Kang