Abstract: A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

Abstract: A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.

Abstract: An apparatus for producing an ingot includes a crucible body having an opening and in which raw materials are accommodated, and a lid assembly located at the opening and having a portion fixed to the crucible body. The lid assembly includes a placement hole having open upper and lower ends, a frame member arranged along a periphery of the opening while surrounding a periphery of the placement hole, and a core member located in the placement hole and movable upward and downward with respect to the frame member.

Abstract: An apparatus for constructing a library for deriving a material composition using empirical result, which enables acceleration of research on the material-properties relationship. By applying the empirical results of the material composition, missing data of the material compositions can be statistically calculated by using supervised non-linear imputation techniques. The completed composition information of the materials is passed as an input of machine learning material-properties relationship prediction.

Abstract: Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.

Abstract: A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.

Abstract: A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm2).

Abstract: A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm3.

Abstract: An adhesive layer of seed crystal includes a graphitized adhesive layer, wherein the graphitized adhesive layer is prepared by heat-treating a pre-carbonized adhesive layer, and wherein the adhesive layer has Vr value of 28%/mm3 or more, and the Vr value is represented by Equation 1 below: Vr ? = { Sq ( V ? 1 - V ? 2 ) } × 1 ? 0 3 [ Equation ? ? 1 ] where Sg (%) is represented by Equation 2 below, V1 is a volume (mm3) of the pre-carbonized adhesive layer, and V2 is a volume (mm3) of the graphitized adhesive layer, Sg ? = { 1 - ( A ? 2 A ? 1 ) } × 1 ? 0 ? 0 ? % [ Equation ? ? 2 ] where A1 is an area (mm2) of the pre-carbonized adhesive layer, and A2 is an area (mm2) of the graphitized adhesive layer.

Abstract: A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below: 3D?r?37D??[Equation 1] where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a leng

Abstract: A wireless power transmitter having a data transmission and reception capability is disclosed. The wireless power transmitter includes a main coil to transmit power, an inverter to apply an alternating current (AC) signal to the main coil, a communication module to output a transmission signal including transmission data to be wirelessly transmitted the wireless power transmitter, and/or receive a reception signal including received data wirelessly received by the wireless power transmitter, a first connecting circuitry to prevent a power signal of the main coil from being input to the communication module, and the auxiliary coil to connect to the main coil and connected to the first connecting circuitry. The main coil or the auxiliary coil may be configured to transmit the transmission data and receive the reception signal, and the auxiliary coil may be wiredly connected to the main coil or not wiredly connected to the main coil.

Abstract: There are provided an inductor and a method of manufacturing the same. The inductor includes: a body including a coil part; and cover parts disposed on upper and lower surfaces of the body. The coil part includes a plurality of through-vias penetrating through the upper and lower surfaces of the body and connection patterns disposed on the upper and lower surfaces of the body, disposed in the cover parts, and connecting the plurality of through-vias to each other.

Abstract: A method for preparing a SiC ingot includes loading a composition of a raw material comprising a carbon source and a silicon source into a reactor; placing a plurality of seed crystal on one side of the reactor spaced apart from the composition; and sublimating the composition such that the SiC ingot grows from the plurality of seed crystal. A flow factor of the composition may be 5 to 35.

Abstract: A method for producing an ingot includes loading a raw material comprising a raw material powder having a D50 of 80 ?m or more into a reactor (loading step), controlling the internal temperature of the reactor such that adjacent particles of the raw material powder are interconnected to form a necked raw material (necking step), and sublimating components of the raw material from the necked raw material to grow an ingot (ingot growth step).

Abstract: A method in which a carbonaceous protective film is formed on a rear surface of a single crystal SiC seed, the seed is placed in a reaction container without adhesion, and then single crystal SiC is grown from a SiC raw material on a front surface of the seed allows the seed to grow to a single crystal ingot having a large diameter since the absence of adhesion of the seed to a holder prevents the generation of warps or cracks attributed to a difference in thermal expansion coefficient between the seed and the holder during heating.

Abstract: Disclosed is a method and system for diffraction-aware non-line of sight (NLOS) sound source localization (SSL) that may reconstruct an indoor space, may generate acoustic rays into the indoor space based on an audio signal collected from the indoor space, and may estimate a position of an NLOS sound source based on a point at which one of the acoustic rays is diffracted.

Abstract: An apparatus for producing an ingot includes a crucible body having an opening and in which raw materials are accommodated, and a lid assembly located at the opening and having a portion fixed to the crucible body. The lid assembly includes a placement hole having open upper and lower ends, a frame member arranged along a periphery of the opening while surrounding a periphery of the placement hole, and a core member located in the placement hole and movable upward and downward with respect to the frame member.

Abstract: A memory element is provided in which a logical state can be securely stored in all conditions even when input set and reset signals are overlapping. This is achieved through provision of an array of persistence latches with an asynchronous circuit that ensures correct operation. The persistence latches provide a persistent output for each of the first and second edges of each input. The memory element is arranged to receive a plurality of inputs including a first and second input. Each first and second inputs include a digital signal that can transition between a first state via a first edge which triggers transition from the first state to the second state and a second edge which triggers transition from the second state to the first state.

Abstract: A method for preparing a seed crystal including a protective film includes preparing i) a first layer composition of a first binder resin and a first solvent and ii) a second layer composition of a second binder resin, a filler, and a second solvent, applying the first layer composition to the rear surface of a seed crystal to form a first coating layer on the rear surface of the seed crystal and drying the first coating layer to form a first layer on the rear surface of the seed crystal, and applying the second layer composition onto the first layer to form a second coating layer on the first layer, followed by heat treating to form a second layer on the first layer wherein the first layer and the second layer are sequentially disposed on the rear surface of the seed crystal, and wherein the first layer has a thickness corresponding to 30% or less of the distance from the bottom surface of the first layer to the top surface of the second layer.