Abstract: An image sensor includes a photoelectric conversion unit configured to receive light to generate an electric charge and provide the electric charge to a first node, a transfer transistor configured to provide a voltage level of the first node to a floating diffusion node in response to a first signal, a booster configured to increase a voltage level of the floating diffusion node in response to a second signal, a source follower transistor configured to provide the voltage level of the floating diffusion node to a second node, and a selection transistor configured to provide a voltage level of the second node to a pixel output terminal in response to a third signal. After the selection transistor is turned on, the booster is enabled, and before the transfer transistor is turned on, the booster is disabled.

Abstract: A variable headlamp apparatus for a vehicle is capable of realizing various lighting functions by switching positions of the plurality of optical units only with a single drive unit. The variable headlamp apparatus includes: an optical unit having an emitter to emit light; a guide unit installed with the optical unit to guide a position of the optical unit to a fixed path; a link unit connected to the optical unit and including multiple links rotatably connected to each other to change the position of the optical unit; and a drive unit to rotate the links. In particular, the optical unit moves along the fixed path of the guide unit while switching a light irradiation direction of the emitter.

Abstract: In the Light Detection and Ranging (LIDAR) integrated lamp apparatus of a vehicle, an application location for a head lamp and an application location for a ladder are configured in the same space, with the result that layout is reduced and the cost reduction due to reduction of the number of the associated portions is achieved by sharing and combining components.

Abstract: Disclosed is a lidar-integrated lamp device for a vehicle in which an application position of a headlamp and an application position of a lidar are the same to reduce a layout and cost according to a reduction in the number of components through a component sharing combination.

Abstract: A LiDAR-integrated lamp device for a vehicle, wherein a headlamp and a LiDAR system are mounted at the same position, such that the layout may be reduced and the number of parts may be decreased by sharing and combining parts, reducing the manufacturing cost.

Abstract: Disclosed is a Light Detection and Ranging (LiDAR)-integrated lamp device configured for a vehicle. In the included LiDAR-integrated lamp device, the position at which a head lamp is applied and the position at which a LiDAR is applied are identical and then, a reduction in layout is achieved. Furthermore, through sharing of constituent elements, the number of constituent elements is reduced and then, manufacturing costs are reduced.

Abstract: A variable headlamp apparatus for a vehicle is capable of realizing various lighting functions by switching positions of the plurality of optical units only with a single drive unit. The variable headlamp apparatus includes: an optical unit having an emitter to emit light; a guide unit installed with the optical unit to guide a position of the optical unit to a fixed path; a link unit connected to the optical unit and including multiple links rotatably connected to each other to change the position of the optical unit; and a drive unit to rotate the links. In particular, the optical unit moves along the fixed path of the guide unit while switching a light irradiation direction of the emitter.

Abstract: A degree of freedom of upper and lower widths of an area in which light is emitted is secured such that a slim type head lamp is implemented. Further, a slim type lamp apparatus for a vehicle, in which a low beam and a high beam are implemented at the same lighting portion, and an overall size of an optical system is reduced such that it is advantageous to configure a package of an optical system, is disclosed.

Abstract: An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.

Abstract: Disclosed is a method of automatically adjusting the leveling of a pixel light headlamp for a vehicle, which may automatically adjust the leveling of a headlamp that is configured for implementing a pixel light using a DMD optical system.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.

Abstract: An external vehicle notification information system may include a projector illuminating generated information using a light source, a lens transmitting the information, a reflector reflecting partial information of the information toward the lens, and a screen displaying the partial information transmitted from the lens.

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

Abstract: Image sensors are provided. An image sensor includes a color filter layer. The image sensor includes a metal structure adjacent a sidewall of the color filter layer. The image sensor includes an insulating layer on the color filter layer. Moreover, the image sensor includes an electrode layer on the insulating layer. Methods of forming image sensors are also provided.

Abstract: A semiconductor device including: a substrate having a first surface and a second surface facing the first surface, wherein light is incident on the second surface; a pixel region formed in the substrate; a semiconductor photoelectric converter disposed in the pixel region and the substrate; one or more transistors disposed in the pixel region and at the first surface of the substrate, wherein the one or more transistors do not overlap the semiconductor photoelectric converter; and a separation pattern disposed in the pixel region and surrounding the one or more transistors.

Abstract: A lighting apparatus for a vehicle may include a first optical system including a first light source module realizing a predetermined level of resolution using a plurality of individual light-emitting diode chips disposed in a lattice pattern and a first image-forming lens module forming an image; a second optical system including a second light source module having a same configuration as the first light source module and a second image-forming lens module forming an image; a first image projected by the first optical system and a second image projected by the second optical system have different angles of departure; and the first image and the second image are projected onto a road as a third image having an overlapping shape of the first image and the second image.

Abstract: A lighting apparatus for a vehicle may include a first optical system including a first light source module realizing a predetermined level of resolution using a plurality of individual light-emitting diode chips disposed in a lattice pattern and a first image-forming lens module forming an image; a second optical system including a second light source module having a same configuration as the first light source module and a second image-forming lens module forming an image; a first image projected by the first optical system and a second image projected by the second optical system have different angles of departure; and the first image and the second image are projected onto a road as a third image having an overlapping shape of the first image and the second image.

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.