Abstract: An embodiment includes a semiconductor device, a plurality of fin structures extending from a substrate, the plurality of fin structures having a plurality of first fin structures and a plurality of second fin structures. The semiconductor device also includes a plurality of isolation regions on the substrate and disposed between the plurality of fin structures. The device also includes a plurality of gate structures on the plurality of isolation regions. The device also includes a plurality of epitaxy structures on one of the plurality of first fin structures. The device also includes a plurality of contact structures on the plurality of epitaxy structures, where the plurality of first fin structures, the plurality of gate structures, the plurality of epitaxy structures, and the plurality of contact structures are components of one or more resonators.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for reducing a quantity of buffers for a video codec. One of the methods includes determining, from a plurality of prediction modes, a prediction mode for data that represents frame data in a frame; in response to determining the prediction mode, selecting, using the prediction mode, one or more buffers from a plurality of buffers, each buffer of which is for a prediction mode from the plurality of prediction modes, a first quantity of buffers in the plurality of buffers being less than a second quantity of prediction modes in the plurality of prediction modes; retrieving, from each of the one or more buffers, historical data for the frame data; and in response to retrieving the historical data, generating, using the historical data, updated data for the frame data in the frame of the video sequence.

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Abstract: Techniques are disclosed by which a coding parameter is determined to encode video data resulting in encoded video data possessing a highest possible video quality. Features may be extracted from an input video sequence. The extracted features may be compared to features described in a model of coding parameters generated by a machine learning algorithm from reviews of previously-coded videos, extracted features of the previously-coded videos, and coding parameters of the previously-coded videos. When a match is detected between the extracted features of the input video sequence and extracted features represented in the model, a determination may be made as to whether coding parameters that correspond to the matching extracted feature correspond to a tier of service to which the input video sequence is to be coded.

Abstract: A display device includes a display panel, an optical structure layer, a driving unit, a timing control unit and a light sensing unit. The optical structure layer is disposed on the display panel. The driving unit is electrically connected to the display panel. The timing control unit is electrically connected to the driving unit. The light sensing unit is electrically connected to the timing control unit to provide a light sensing result to the timing control unit. The timing control unit is used to receive a first signal and provides a second signal and a third signal to the driving unit according to the light sensing result, and the driving unit drives the display panel according to the second signal and the third signal.

Abstract: The present invention relates to a chip-fixing device for a socket, which comprises a fixing base body and a movable stop. The socket is assembled in a socket-accommodating recess of the fixing base body. The movable stop is assembled in the fixing base body and controlled in such a manner that a stopper is moved between a first position and a second position, wherein the first position refers to a position where the stopper is located right above the socket, and the second position refers to a position where the stopper is not located right above the socket. Accordingly, the socket-accommodating recess can be used to install sockets of different sizes, and the movable stop can drive the stopper to restrict a chip from falling off the socket or drive the stopper to release the chip, depending on presence or absence of an external force.

Abstract: An injection device is provided, including a syringe having a barrel and a flange and a backstop configured to be coupled with the syringe adjacent to the flange. The backstop includes an inner surface generally extending around at least a portion of the syringe, wherein the inner surface includes at least one protrusion extending away from the inner surface and configured to engage the flange and/or the barrel to permit or promote airflow through a space between the inner surface and the syringe.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a resistor structure overlying a semiconductor substrate. A dielectric structure overlies the semiconductor substrate. The resistor structure is disposed within the dielectric structure. The resistor structure includes a thin film resistor (TFR) layer and a first capping structure disposed on the TFR layer. A first cavity is disposed within the dielectric structure and abuts a first sidewall of the first capping structure.

Abstract: A wafer bonding apparatus is provided. The wafer bonding apparatus includes a first wafer chuck, a second wafer chuck, and a plurality of bonding pins. The first wafer chuck is configured to hold a first wafer. The second wafer chuck is configured to hold a second wafer. The bonding pins are accommodated in the first wafer chuck and configured to be movable through the first wafer chuck to apply pressure to bend the first wafer, thereby causing bonding contact of the first wafer and the second wafer.

Abstract: A system obtains a data set representing immersive video content for display at a display time, including first data representing the content according to a first level of detail, and second data representing the content according to a second higher level of detail. During one or more first times prior to the display time, the system causes at least a portion of the first data to be stored in a buffer. During one or more second times prior to the display time, the system generates a prediction of a viewport for displaying the content to a user at the display time, identifies a portion of the second data corresponding to the prediction of the viewport, and causes the identified portion of the second data to be stored in the video buffer. At the display time, the system causes the content to be displayed to the user using the video buffer.

Abstract: An electronic device including an active region and a peripheral region, and includes a substrate including a first edge; a first electrode layer disposed on the substrate; a first conductive glue disposed on the substrate and in the peripheral region; a second conductive glue disposed on the substrate and in the peripheral region; an insulating glue disposed in the peripheral region and overlapped with the first conductive glue and the second conductive glue; and a first metal element fixed on the first electrode layer through the first conductive glue and the insulating glue; wherein in a top view, the insulating glue extends along an extension direction parallel to the first edge, and along the extension direction, a sum of lengths of the first conductive glue and the second conductive glue is less than a length of the insulating glue.

Abstract: Techniques are proposed to improve temporal motion projection in video coding. Candidate reference frames available for use in temporal motion projection are sorted in processing order according to scores assigned based on estimates of the reference frames' suitability for prediction. Such estimates may be based on temporal distance between each candidate reference frame and that reference frame's prediction references. Estimates may be based, for each reference frame, based on an estimate of coding quality of a reference frame from which the respective candidate reference frame makes a prediction reference. Once sorted, the candidate reference frames may be processing in the sorting order to supply prediction data to a current frame that is to be coded from the candidate reference frames. Additionally, hardware friendly designs of motion field hole filling and motion vector smoothing operations are proposed.

Abstract: An information handling system may include a processor, one or more audio speakers configured to play back audible audio signals, and a basic input/output system (BIOS) comprising a program of instructions comprising boot firmware configured to be the first code executed by the processor when the information handling system is booted or powered on in order to initialize the information handling system for operation. The BIOS may be further configured to monitor for an error occurring during execution of the BIOS and responsive to an error occurring during execution of the BIOS, cause the one or more audio speakers to play back a sequence of one or more multi-frequency audio signals encoding an identity of the error.

Abstract: In an example method, a decoder accesses a bitstream representing video content, and parses one or more flexible coefficient position (FCP) syntax from the bitstream, where the one or more FCP syntax indicate one or more index values. The decoder further determines side information representing one or more characteristics of an encoded portion of the video content. The decoder interprets the one or more FCP syntax based on the side information, including determining a coefficient position with respect to the encoded portion of the video content based on the one or more index values and the side information. The decoder decodes the encoded portion of the video content according to the coefficient position.

Abstract: In communication applications, aggregate source image data at a transmitter exceeds the data that is needed to display a rendering of a viewport at a receiver. Improved streaming techniques that include estimating a location of a viewport at a future time. According to such techniques, the viewport may represent a portion of an image from a multi-directional video to be displayed at the future time, and tile(s) of the image may be identified in which the viewport is estimated to be located. In these techniques, the image data of tile(s) in which the viewport is estimated to be located may be requested at a first service tier, and the other tile in which the viewport is not estimated to be located may be requested at a second service tier, lower than the first service tier.

Abstract: Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon (e.g., at a hydrogen/hydrocarbon ratio of at least 5), such that a carbon-containing polymer is formed on the substrate. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Abstract: An apparatus including; a substrate; an isolator that is formed over the substrate, the isolator including a silicon shield layer that is formed between a first buried oxide (BOX) layer and a second BOX layer; a silicon layer having an oxide trench structure formed therein, the oxide trench structure being arranged to define a first silicon island and a second silicon island; a first electronic circuit that is formed over the first silicon island; and a second electronic circuit that is formed over the second silicon island, the first electronic circuit being electrically coupled to the first electronic circuit.

Abstract: An injection device is provided, including a syringe having a barrel and a flange and a backstop configured to be coupled with the syringe adjacent to the flange. The backstop includes an inner surface generally extending around at least a portion of the syringe, wherein the inner surface includes at least one protrusion extending away from the inner surface and configured to engage the flange and/or the barrel to permit or promote airflow through a space between the inner surface and the syringe.

Abstract: Methods and apparatuses for processing semiconductor substrates in an integration scheme to form chamferless vias are provided herein. Methods include bifurcating etching of dielectric by depositing a conformal removable sealant layer having properties for selective removal relative to dielectric material without damaging dielectric material. Some methods include forming an ashable conformal sealant layer. Methods also include forming hard masks including a Group IV metal and removing conformal removable sealant layers and hard masks in one operation using same etching chemistries.