Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.

Abstract: An RF testing method is applied between a testing instrument and multiple devices under test at least including a first DUT and a second DUT. The testing instrument includes a signal generator and a signal analyzer. A sync signal is sent to the testing instrument and the first DUT, so that the first DUT occupies the signal generator to receive a testing signal from the signal generator. The first DUT sends an uplink signal to the signal analyzer based on the testing signal to occupy the signal analyzer for signal analysis at a first point in time. The sync signal is sent to the testing instrument and the second DUT, so that the second DUT occupies the signal generator to receive the testing signal from the signal generator at a second point in time. The first point in time is parallel to the second point in time.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk, the display may include active and/or passive leakage-mitigating structures. The passive leakage-mitigating structures may have an undercut that causes discontinuities in the overlying OLED layers. Active leakage-mitigating structures may include a conductive layer (e.g., a conductive ring) that drains leakage current to ground. Alternatively, the active leakage-mitigating structures may include a gate electrode modulator with a variable voltage that stops the current flow laterally.

Abstract: A display pixel may include an organic light-emitting diode, one or more emission transistors, a drive transistor, a gate setting transistor, a data loading transistor, and an initialization transistor. The drive transistor may be implemented as a semiconducting-oxide transistor to mitigate threshold voltage hysteresis to improve first frame response at high refresh rates, to reduce undesired luminance jumps at low refresh rates, and to reduce image sticking. The gate setting transistor may also be implemented as a semiconducting-oxide transistor to reduce leakage at the gate terminal of the drive transistor. The initialization transistor may also be implemented as a semiconducting-oxide transistor so that it can be controlled using a shared emission signal to reduce routing complexity. The remaining transistors in the pixel may be implemented as p-type silicon transistors.

Abstract: An electronic device may include a display with pixels formed using light-emitting diodes, thin-film silicon transistors, thin-film semiconducting-oxide transistors, and capacitors. The silicon transistors, semiconducting-transistors, and capacitors may have control terminals that are coupled to gate or routing lines that extend across the face of the display and that are formed in a low resistance source-drain metal routing layer. Forming routing/gate lines using the low resistance source-drain metal routing layer dramatically reduces the resistance of the gate lines, which enables better timing margins for large display panels operating at higher refresh rates.

Abstract: A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

Abstract: An electronic device may include a display with pixels formed using light-emitting diodes, thin-film silicon transistors, thin-film semiconducting-oxide transistors, and capacitors. The silicon transistors, semiconducting-transistors, and capacitors may have control terminals that are coupled to gate or routing lines that extend across the face of the display and that are formed in a low resistance source-drain metal routing layer. Forming routing/gate lines using the low resistance source-drain metal routing layer dramatically reduces the resistance of the gate lines, which enables better timing margins for large display panels operating at higher refresh rates.

Abstract: A display pixel may include an organic light-emitting diode, one or more emission transistors, a drive transistor, a gate setting transistor, a data loading transistor, and an initialization transistor. The drive transistor may be implemented as a semiconducting-oxide transistor to mitigate threshold voltage hysteresis to improve first frame response at high refresh rates, to reduce undesired luminance jumps at low refresh rates, and to reduce image sticking. The gate setting transistor may also be implemented as a semiconducting-oxide transistor to reduce leakage at the gate terminal of the drive transistor. The initialization transistor may also be implemented as a semiconducting-oxide transistor so that it can be controlled using a shared emission signal to reduce routing complexity. The remaining transistors in the pixel may be implemented as p-type silicon transistors.

Abstract: Micro LED and microdriver chip integration schemes are described. In an embodiment a microdriver chip includes a plurality of trenches formed in a bottom surface of the microdriver chip, with each trench surrounding a conductive stud extending below a bottom surface of the microdriver chip body. Integration schemes are additionally described for providing electrical connection to conductive terminal contacts and micro LEDs bonded to a display substrate and adjacent to a microdriver chip.

Abstract: Micro LED and microdriver chip integration schemes are described. In an embodiment a microdriver chip includes a plurality of trenches formed in a bottom surface of the microdriver chip, with each trench surrounding a conductive stud extending below a bottom surface of the microdriver chip body. Integration schemes are additionally described for providing electrical connection to conductive terminal contacts and micro LEDs bonded to a display substrate and adjacent to a microdriver chip.

Abstract: A component such as a display may have a substrate and thin-film circuitry on the substrate. The thin-film circuitry may be used to form an array of pixels for a display or other circuit structures. Metal traces may be formed among dielectric layers in the thin-film circuitry. Metal traces may be provided with insulating protective sidewall structures. The protective sidewall structures may be formed by treating exposed edge surfaces of the metal traces. A metal trace may have multiple layers such as a core metal layer sandwiched between barrier metal layers. The core metal layer may be formed from a metal that is subject to corrosion. The protective sidewall structures may help prevent corrosion in the core metal layer. Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures.

Abstract: Hybrid silicon TFT and oxide TFT structures and methods of formation are described. In an embodiment, a protection layer is formed over a semiconductor oxide channel layer of the oxide TFT to protect the semiconductor oxide channel layer during a cleaning operation of the silicon TFT.

Abstract: A component such as a display may have a substrate and thin-film circuitry on the substrate. The thin-film circuitry may be used to form an array of pixels for a display or other circuit structures. Metal traces may be formed among dielectric layers in the thin-film circuitry. Metal traces may be provided with insulating protective sidewall structures. The protective sidewall structures may be formed by treating exposed edge surfaces of the metal traces. A metal trace may have multiple layers such as a core metal layer sandwiched between barrier metal layers. The core metal layer may be formed from a metal that is subject to corrosion. The protective sidewall structures may help prevent corrosion in the core metal layer. Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures.

Abstract: A display region and a light sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the light sensing region is formed by the same processes with the drive thin film transistor of the display region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed.

Abstract: An OLED display is proposed. The OLED display includes a gate driver for generating a scanning signal, a source driver for generating a data signal, and a plurality of cells arranged in an array. Each cell includes a first transistor for delivering the data signal when receiving the scanning signal, a second transistor for generating a driving current based on a voltage difference between a first supply voltage signal and the data signal, a storage capacitor coupled between the first transistor and an output end of the driving circuit, for storing the data signal, an organic light emitting diode for generating light based on the driving current, an infrared emitting layer for producing infrared ray, and an infrared sensitive layer for sensing the infrared ray reflected by an object.

Abstract: A transflective display panel includes a first substrate, a plurality of electroluminescent (EL) elements disposed on the first substrate, a plurality of reflectors disposed on the first substrate, a second substrate disposed opposite to the first substrate, a plurality of transparent electrodes disposed on a side of the second substrate opposite to the first substrate, a plurality of color filter layers disposed on a side of the second substrate opposite to the first substrate, and a liquid crystal layer disposed between the first substrate and the second substrate. Accordingly, a problem of insufficient contrast ratio of the transflective display panel can be solved, when the ambient light is too high.

Abstract: An OLED display is proposed. The OLED display includes a gate driver for generating a scanning signal, a source driver for generating a data signal, and a plurality of cells arranged in an array. Each cell includes a first transistor for delivering the data signal when receiving the scanning signal, a second transistor for generating a driving current based on a voltage difference between a first supply voltage signal and the data signal, a storage capacitor coupled between the first transistor and an output end of the driving circuit, for storing the data signal, an organic light emitting diode for generating light based on the driving current, an infrared emitting layer for producing infrared ray, and an infrared sensitive layer for sensing the infrared ray reflected by an object.

Abstract: A displaying region and a sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the sensing region is formed by the same processes with the drive thin film transistor of the displaying region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed.

Abstract: A transflective display panel includes a first substrate, a plurality of electroluminescent (EL) elements disposed on the first substrate, a plurality of reflectors disposed on the first substrate, a second substrate disposed opposite to the first substrate, a plurality of transparent electrodes disposed on a side of the second substrate opposite to the first substrate, a plurality of color filter layers disposed on a side of the second substrate opposite to the first substrate, and a liquid crystal layer disposed between the first substrate and the second substrate. Accordingly, a problem of insufficient contrast ratio of the transflective display panel can be solved, when the ambient light is too high.

Abstract: A cellular phone case includes a container having a box and a lid to close the opening of the box. A solar cell is provided on the lid to be exposed under sun light. A circuit board is provided in the box and is electrically connected to the solar cell. A battery board is provided in the box and is electrically connected to the circuit board. A socket is provided on the box and is electrically connected to the circuit board to input electricity power into the battery or to output electricity power from the battery.