Abstract: A drying apparatus and method of drying a wafer including supplying a drying material for drying a wafer and controlling a flow of the drying material to uniformly or substantially dry the wafer. The flow of the drying material may be controlled by a vent unit including at least one part for controlling the flow of the drying material to uniformly or substantially uniformly dry the wafer.

Abstract: An apparatus for drying a substrate using an isopropyl alcohol vapor includes a container for receiving an isopropyl alcohol vapor to dry a plurality of substrates wherein an opening is vertically formed through an upper portion of the container to permit the loading and unloading of the substrates; a supporting member for supporting the plurality of substrates in the container in a vertical direction and for supporting the substrates side by side in a horizontal direction, wherein the supporting member extends through the container and through the opening; and a cover for obstructing a flow of clean air from flowing directly from an air cleaner disposed over the container into the container through the opening. In addition, the apparatus may include an inert gas supplying member to supply an inert gas onto the substrates to prevent native oxide films from forming on the substrates.

Abstract: The present disclosure provides a method of business-to-business exchange between customers in a semiconductor manufacturing environment. In one embodiment, the method includes exchanging a product from a primary provider to a secondary provider, assigning event elements to the product through a virtual fab, and transmitting information associated with the product throughout the virtual fab, wherein the transmission of information occurs multi-directionally between the entities of the virtual fab and controlling the flow of information and the product through the virtual fab. The controlling flow is multi-directional throughout the virtual fab.

Abstract: A display for sharing the display data channel is provided. The display shares the display data channel and thus the preexisting display data channel can be used as the interface for RS232 or I2C communication for performing the ISP or adjustment of the firmware. Hence, it can simplify the manufacturing tools, enhance the manufacturing efficiency, and allow the users to update the firmware by themselves.

Abstract: A quality assurance system and method for use between a service provider having a sequence of process stages and a quality assurance stage, and a control center. The service provider performs a plurality of processes on goods at the process stages, transfers engineering data corresponding to the processes to the control center via Internet, and holds the goods at the quality assurance. The control center compares the engineering data with a standard specification, and transfers a confirmation message to the service provider if the engineering data conforms to the standard specification. The service provider may ship the goods to customers after the confirmation message is received.

Abstract: The present invention relates to variants of a parent glycoside hydrolase, comprising a substitution at one or more positions corresponding to positions 21, 94, 157, 205, 206, 247, 337, 350, 373, 383, 438, 455, 467, and 486 of amino acids 1 to 513 of SEQ ID NO: 2, and optionally further comprising a substitution at one or more positions corresponding to positions 8, 22, 41, 49, 57, 113, 193, 196, 226, 227, 246, 251, 255, 259, 301, 356, 371, 411, and 462 of amino acids 1 to 513 of SEQ ID NO: 2 a substitution at one or more positions corresponding to positions 8, 22, 41, 49, 57, 113, 193, 196, 226, 227, 246, 251, 255, 259, 301, 356, 371, 411, and 462 of amino acids 1 to 513 of SEQ ID NO: 2, wherein the variants have glycoside hydrolase activity. The present invention also relates to nucleotide sequences encoding the variant glycoside hydrolases and to nucleic acid constructs, vectors, and host cells comprising the nucleotide sequences.

Abstract: A method of and apparatus for cleaning semiconductor substrates prevents the drying fluid used to dry the substrates from condensing. The apparatus has a chamber having an exhaust port that defines a path along which the drying fluid, e.g., IPA vapor, is exhausted. The degree to which the exhaust path is opened is regulated according to the pressure within the chamber.

Abstract: An apparatus for cleaning semiconductor substrates includes a chamber having a cleaning room and a drying room disposed over the cleaning room. The cleaning room and the drying room are separated or placed in communication with one another by a separation plate. An exhaust path is formed at a central portion of the separation plate. As de-ionized water (DI water) filling the cleaning room is drained during a dry process, the inside of the drying room is decompressed, and a drying fluid in the drying room flows from the drying room to the cleaning room along the exhaust path.

Abstract: An apparatus of drying semiconductor substrate using azeotrope effect and a drying method using the apparatus are provided. The apparatus includes a bath for storing a fluid, a chamber located above the bath and an apparatus for supplying an organic solvent onto the surface of the fluid in the bath for forming an azeotrope layer at the surface of the fluid and for forming an organic solvent layer over the azeotrope layer. The organic solvent layer and the atmosphere thereon are heated by a heater. The apparatus may further include a drying gas conduit for introducing a drying gas into the chamber.

Abstract: One preferred embodiment of the present invention provides a phase adjusting method of an A/D video signal conversion. A plurality of phase references is applied to convert a number of analog video frames to a number of digital video frames. For each phase reference, an absolute display difference is obtained by adding up absolute differences between corresponding pixels that are at positions in the digital video frames. A target phase reference that produces a smallest absolute display difference is applied to convert a follow-up analog video frame, and a stable high quality digital display is obtained.

Abstract: A wafer guide used in cleaning and/or drying processes of semiconductor wafers is provided. The wafer guide includes a horizontal support panel and at least three vertical panels attached on one surface of the support panel. Each of the vertical panels has a vertical body panel and a plurality of protrusions upwardly extended from a top surface of the vertical body panel. Gap regions between the protrusions act as slots for holding wafers. Sidewalls of the slots have a convex shaped profile when viewed from a top view, and bottom surfaces of the slots also have a convex shaped profile when viewed from a cross sectional view that crosses the vertical panels. Accordingly, contact areas between the wafers and the wafer guide are reduced to improve a drying efficiency of the wafers.

Abstract: An apparatus for drying a substrate using an isopropyl alcohol vapor includes a container for receiving an isopropyl alcohol vapor to dry a plurality of substrates wherein an opening is vertically formed through an upper portion of the container to permit the loading and unloading of the substrates; a supporting member for supporting the plurality of substrates in the container in a vertical direction and for supporting the substrates side by side in a horizontal direction, wherein the supporting member extends through the container and through the opening; and a cover for obstructing a flow of clean air from flowing directly from an air cleaner disposed over the container into the container through the opening. In addition, the apparatus may include an inert gas supplying member to supply an inert gas onto the substrates to prevent native oxide films from forming on the substrates.

Abstract: An apparatus includes a chamber for containing a fluid, a guide seated in the chamber, and a transfer robot for loading and/or unloading a plurality of wafers to and/or from the guide. The wafers are located on the guide. The guide has a supporting member for supporting a wafer and a stopper member for preventing the wafer from being inclined over a predetermined range. The stopper member is in contact with a wafer edge disposed at a higher position than a wafer edge supported by the supporting member. A wafer guide has a stopper member to prevent adjacent wafers from being inclined and coming in contact with each other. Therefore, it is possible to suppress a poor drying such as water spots (or watermarks) produced when wafers are adhered to each other in a drying process.

Abstract: An apparatus of drying semiconductor substrate using azeotrope effect and a drying method using the apparatus are provided. The apparatus includes a bath for storing a fluid, a chamber located above the bath and an apparatus for supplying an organic solvent onto the surface of the fluid in the bath for forming an azeotrope layer at the surface of the fluid and for forming an organic solvent layer over the azeotrope layer. The organic solvent layer and the atmosphere thereon are heated by a heater. The apparatus may further include a drying gas conduit for introducing a drying gas into the chamber.

Abstract: A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.

Abstract: An etching method with less waste gases. Firstly, provide a substrate covered by a dielectric layer, and put both the substrate and the dielectric layer into a chamber that is coupled with a power source and a C3F8 reactive gases source. Next, provide a plasma inside the chamber under an environment with a low RF power, and a low pressure. Finally, terminate the existence of the plasma and move both the substrate and the etched dielectric later out the chamber.

Abstract: A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.

Abstract: An etching end point detector and its related method of use detect a point of time when an etching process ends by using plasma light generated during a plasma process in a chamber of plasma etching equipment. The detector comprises an optical device receiving light generated in a chamber during the etching process and producing from the light a plurality of optical signals having different corresponding wavelengths; signal converting means receiving the plurality of optical signals and converting the plurality of optical signals into corresponding light intensity values indicating an intensity of the corresponding optical signal; and a signal processor accumulating selected ones of the light intensity values corresponding to predetermined wavelengths to produce an EPD value, and in response to the EPD value, determining an end point of the etching process.

Abstract: Disclosed is a non-thermal plasma method for treating a toxic compounds-containing gas; the method comprising the steps of: filling alkali earth metal catalysts and dielectrics within a plasma reactor; the alkali earth metal catalysts being made by substituting alkali earth metal cations for cations of aluminum/silicon molecular sieves used as carriers; introducing a toxic compounds-containing gas into the plasma reactor; and supplying AC power or pulse power to the plasma reactor generating a non-thermal plasma and thus decomposing or oxidizing the toxic compounds. Also to stabilize the plasma more during the non-thermal plasma process and to enhance treatment efficiency of the toxic compounds, the catalysts substituted by the alkali earth metal are filled together with the well-known dielectrics within the plasma reactor; the alkali earth metal catalysts being electrically less conductive and inexpensive.

Abstract: A wall flower support structure includes a first bar having fit into each end thereof a connector to connect with a second bar extending in a direction normal to the first bar in a fit engagement manner. Each of the second bars has a slot co-extensive therewith to receive therebetween support plates which form a platform for supporting flower pots. An end post extends from each of the connectors, and has two spaced openings to receive two legs of a U-shaped side rail member. An end plate is fixed to the free end of each of the second bars to contact the legs of the side rail member. An L-shaped anchoring member has a first leg extending through an opening of the end plate and set a spacing between the end plate and a second leg of the anchoring member for accommodating a wall therebetween. A fastening device is provided to secure the support structure to the wall. A front rail member with decorative pattern is releasably secured to the first bar.