Patents by Inventor Jung-Yu Shieh

Jung-Yu Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching solution, method of surface modification of semiconductor substrate and method of forming shallow trench isolation
    Patent number: 7776713
    Abstract: An etching solution, a method of surface modification of a semiconductor substrate and a method of forming shallow trench isolation are provided. The etching solution is used for surface modifying the semiconductor substrate. The etching solution includes an oxidant and an oxide remover. The semiconductor substrate is oxidized to a semiconductor oxide by the oxidant, and the oxide remover subtracts the semiconductor oxide.
    Type: Grant
    Filed: May 30, 2007
    Date of Patent: August 17, 2010
    Assignee: Macronix International Co., Ltd.
    Inventors: Chia-Wei Wu, Jung-Yu Shieh, Ling-Wu Yang
  • Etching solution, method of surface modification of semiconductor substrate and method of forming shallow trench isolation
    Publication number: 20080299741
    Abstract: An etching solution, a method of surface modification of a semiconductor substrate and a method of forming shallow trench isolation are provided. The etching solution is used for surface modifying the semiconductor substrate. The etching solution includes an oxidant and an oxide remover. The semiconductor substrate is oxidized to a semiconductor oxide by the oxidant, and the oxide remover subtracts the semiconductor oxide.
    Type: Application
    Filed: May 30, 2007
    Publication date: December 4, 2008
    Inventors: Chia-Wei Wu, Jung-Yu Shieh, Ling-Wu Yang
  • Methods for forming a trench isolation structure with rounded corners in a silicon substrate
    Patent number: 7442620
    Abstract: A process for forming STI regions comprises performing an In Situ Steam Generation (ISSG) radical conversion on a SiN liner layer within an STI trench in order to expose the top corner of the trench and simultaneously cause rounding the top corner of a liner oxide layer within the trench. The rounding of the liner oxide layer can prevent thinning of a subsequently formed gate oxide.
    Type: Grant
    Filed: June 13, 2006
    Date of Patent: October 28, 2008
    Assignee: Macronix International Co., Ltd.
    Inventors: Chia-Wei Wu, Jung-Yu Shieh, Ling-Wuu Yang
  • METHODS FOR FORMING AN ISOLATION STRUCTURE IN A SILICON SUBSTRATE
    Publication number: 20070287260
    Abstract: A process for forming STI regions comprises performing an In Situ Steam Generation (ISSG) radical conversion on a SiN liner layer within an STI trench in order to expose the top corner of the trench and simultaneously cause rounding the top corner of a liner oxide layer within the trench. The rounding of the liner oxide layer can prevent thinning of a subsequently formed gate oxide.
    Type: Application
    Filed: June 13, 2006
    Publication date: December 13, 2007
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chia-Wei Wu, Jung-Yu Shieh, Ling-Wuu Yang