Abstract: The present disclosure relates to a blood perfusion device, and more specifically to a blood perfusion device which includes an anti-mtFP antibody to remove mtFP, thereby blocking the binding of mtFP to formyl peptide receptor 1 (FPR1) on the PMN membrane by removing the mtFP, and is capable of suppressing the occurrence of secondary infection in hospital by restoring the chemotaxis of polymorphonuclear leukocytes (PMN). The present disclosure can reduce late death and improve long-term survival by improving the clinical course of sepsis patients recovering after the acute phase, and it is expected to improve long-term survival by suppressing the occurrence of secondary infections in hospital for patients who require long-term hospitalization in the intensive care unit or hospital room, such as severe trauma patients, organ transplant patients and patients surviving after cardiac arrest.

Abstract: A method of post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate includes positioning a substrate having a silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber, and exposing the silicon nitride (SiN)-based dielectric film to helium-containing high-energy low-dose plasma in the processing chamber. Energy of helium ions in the helium-containing high-energy low-dose plasma is between 1 eV and 3.01 eV, and flux density of the helium ions in the helium-containing high-energy low-dose plasma is between 5×1015 ions/cm2·sec and 1.37×1016 ions/cm2·sec.

Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma and directing the first plasma to the oxide layer. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma and directing the second plasma to the treated oxide layer. The densified oxide layer has a final WER of less than one-half of the initial WER.

Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

Abstract: Provided is a drug hypersensitivity prevention system. A drug hypersensitivity prevention system according to an embodiment of the present application may comprise: a first fluid storage unit 10; a second fluid storage unit 20; a control device 30 including a first pump 31 installed in a discharge line connected to the first fluid storage unit 10 so as to control an amount of a first fluid discharged from the first fluid storage unit 10, and a second pump 32 installed in a discharge line connected to the second fluid storage unit 20 so as to control an amount of a second fluid discharged from the second fluid storage unit 20; a mixing unit 40 in which the first fluid discharged from the first fluid storage unit 10 and the second fluid discharged from the second fluid storage unit 20 are mixed; a pouch 50 connected to the mixing unit 40; and a catheter 60 connected to the mixing unit 40.

Abstract: A method of depositing a silicon-containing material is disclosed. Some embodiments of the disclosure provide films which fill narrow CD features without a seam or void. Some embodiments of the disclosure provide films which form conformally on features with wider CD. Embodiments of the disclosure also provide superior quality films with low roughness, low defects and advantageously low deposition rates.

Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

Abstract: Systems, apparatuses, and methods may provide for technology that gap-fills stairwells for memory devices. The memory device is manufactured by forming a liner film on a trench of a stairwell layer of the memory device; depositing a doped silicon dioxide film on the liner film, wherein doping of the doped silicon dioxide film is performed during the deposition; and performing a pressurized and steamed anneal on the doped silicon dioxide film deposited on the liner film to form a reflowed doped silicon dioxide film.

Abstract: A method of depositing a silicon-containing material is disclosed. Some embodiments of the disclosure provide films which fill narrow CD features without a seam or void. Some embodiments of the disclosure provide films which form conformally on features with wider CD. Embodiments of the disclosure also provide superior quality films with low roughness, low defects and advantageously low deposition rates.

Abstract: A method of depositing a silicon-containing material is disclosed. Some embodiments of the disclosure provide films which fill narrow CD features without a seam or void. Some embodiments of the disclosure provide films which form conformally on features with wider CD. Embodiments of the disclosure also provide superior quality films with low roughness, low defects and advantageously low deposition rates.

Abstract: Embodiments disclosed herein relate to cluster tools for forming and filling trenches in a substrate with a flowable dielectric material. In one or more embodiments, a cluster tool for processing a substrate contains a load lock chamber, a first vacuum transfer chamber coupled to the load lock chamber, a second vacuum transfer chamber, a cooling station disposed between the first vacuum transfer chamber and the second vacuum transfer chamber, a factory interface coupled to the load lock chamber, a plurality of first processing chambers coupled to the first vacuum transfer chamber, wherein each of the first processing chambers is a deposition chamber capable of performing a flowable layer deposition, and a plurality of second processing chambers coupled to the second vacuum transfer chamber, wherein each of the second processing chambers is a plasma chamber capable of performing a plasma curing process.

Abstract: Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, UV cure for increasing film density, film conversion to silicon oxide at low temperature, and film densification by low temperature inductively coupled plasma (ICP) treatment (<400° C.).

Abstract: An automatic cardiopulmonary resuscitation device includes a movable chest compressor for repeatedly pressing a patient's chest at a preset depth and cycle, a cardiac output measurement unit for measuring a cardiac output of the patient in accordance with the pressurization of the chest compressor and a processor for changing pressing locations by performing control such that the chest compressor moves according to a preset method.

Abstract: Provided are a rapid antimicrobial susceptibility test, based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and an automated cell image analysis system therefor. The antimicrobial susceptibility test is rapidly performed based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and this makes it possible to obtain highly reliable test results faster by six to seven times than the standard method recommended by Clinical and Laboratory Standards Institute (CLSI).

Abstract: A method of post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate includes positioning a substrate having a silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber, and exposing the silicon nitride (SiN)-based dielectric film to helium-containing high-energy low-dose plasma in the processing chamber. Energy of helium ions in the helium-containing high-energy low-dose plasma is between 1 eV and 3.01 eV, and flux density of the helium ions in the helium-containing high-energy low-dose plasma is between 5×1015 ions/cm2·sec and 1.37×1016 ions/cm2·sec.

Abstract: Embodiments disclosed herein relate to cluster tools for forming and filling trenches in a substrate with a flowable dielectric material. In one or more embodiments, a cluster tool for processing a substrate contains a load lock chamber, a first vacuum transfer chamber coupled to the load lock chamber, a second vacuum transfer chamber, a cooling station disposed between the first vacuum transfer chamber and the second vacuum transfer chamber, a factory interface coupled to the load lock chamber, a plurality of first processing chambers coupled to the first vacuum transfer chamber, wherein each of the first processing chambers is a deposition chamber capable of performing a flowable layer deposition, and a plurality of second processing chambers coupled to the second vacuum transfer chamber, wherein each of the second processing chambers is a plasma chamber capable of performing a plasma curing process.

Abstract: Implementations disclosed herein relate to methods for forming and filling trenches in a substrate with a flowable dielectric material. In one implementation, the method includes subjecting a substrate having at least one trench to a deposition process to form a flowable layer over a bottom surface and sidewall surfaces of the trench in a bottom-up fashion until the flowable layer reaches a predetermined deposition thickness, subjecting the flowable layer to a first curing process, the first curing process being a UV curing process, subjecting the UV cured flowable layer to a second curing process, the second curing process being a plasma or plasma-assisted process, and performing sequentially and repeatedly the deposition process, the first curing process, and the second curing process until the plasma cured flowable layer fills the trench and reaches a predetermined height over a top surface of the trench.

Abstract: The present invention relates to a blood pump. The blood pump according to the present invention includes: a housing including an inlet, through which blood flows, at an upper part of the housing and an outlet, through which the blood is discharged, along an edge of the housing; an impeller part, which is rotatable and disposed inside the housing, including a plurality of blades on the surface thereof so as to move the blood flowing in through the inlet toward the outlet by using a centrifugal force; a rotary shaft member disposed to penetrate the center part of the impeller part so as to support the impeller part to be rotatable which moves the blood to the lower part thereof; and a magnetic body disposed on the impeller part for rotating the impeller part in a predetermined direction according to a change in a magnetic field outside the housing.

Abstract: Provided are a rapid antimicrobial susceptibility test, based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and an automated cell image analysis system therefor. The antimicrobial susceptibility test is rapidly performed based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and this makes it possible to obtain highly reliable test results faster by six to seven times than the standard method recommended by Clinical and Laboratory Standards Institute (CLSI).

Abstract: Provided are a rapid antimicrobial susceptibility test, based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and an automated cell image analysis system therefor. The antimicrobial susceptibility test is rapidly performed based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and this makes it possible to obtain highly reliable test results faster by six to seven times than the standard method recommended by Clinical and Laboratory Standards Institute (CLSI).