Patents by Inventor Jung Il Cho
Jung Il Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170821Abstract: A battery pack includes a battery module having at least one battery cell, a pack case configured to accommodate the battery module, and a connection guide unit provided on at least one side of the pack case and configured to be accessible to electrical members of two or more connection types.Type: ApplicationFiled: December 19, 2022Publication date: May 23, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: Jong-Chan SHIN, Ki-Youn KIM, JUNG-IL PARK, Young-Bo CHO, Byung-Hyuk CHOI
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Patent number: 11991878Abstract: A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.Type: GrantFiled: April 12, 2023Date of Patent: May 21, 2024Assignee: SK keyfoundry Inc.Inventors: Kwang Il Kim, Yang Beom Kang, Jung Hwan Lee, Min Kuck Cho, Hyun Chul Kim
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Patent number: 11979227Abstract: An operation method of a relay node may include: receiving, from a first communication node, first data composed of n bits; receiving, from a second communication node, second data composed of m bits; in response to determining that n is greater than m, generating first T-data of m bits excluding (n-m) bits from the n-bits of the first data and first R-data of (n-m) bits; generating third data by performing a network coding operation on the first T-data and the second data; transmitting the third data to the first communication node; and transmitting the third data and the first R-data to the second communication node.Type: GrantFiled: December 3, 2021Date of Patent: May 7, 2024Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jun Hyeong Kim, Gyu Il Kim, Go San Noh, Hee Sang Chung, Dae Soon Cho, Sung Woo Choi, Seung Nam Choi, Jung Pil Choi
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Patent number: 9954943Abstract: A method for configuring multi-vision by an electronic device is provided. The method includes obtaining, by the electronic device, a user input, generating first user input information from the obtained user input, determining whether the electronic device is one of a master device and a slave device, when the electronic device is determined to be the master device, obtaining second user input information from one or more other electronic devices, and determining an arrangement structure of one of the master device and the slave device based on one of the first user input information and the second user input information.Type: GrantFiled: April 23, 2015Date of Patent: April 24, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Gyu-Cheol Choi, Hyung-Jin Kim, Jung-Il Cho
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Patent number: 9851898Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.Type: GrantFiled: March 13, 2017Date of Patent: December 26, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-Jin Lim, Byung-Hwan Kim, Youn-Soo Kim, Hyung-Jin Kim, Jeong-Hwan Noh, In-Su Park, Jung-Il Cho
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Publication number: 20170185290Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.Type: ApplicationFiled: March 13, 2017Publication date: June 29, 2017Inventors: Yong-Jin Lim, Byung-Hwan Kim, Youn-Soo Kim, Hyung-Jin Kim, Jeong-Hwan Noh, In-Su Park, Jung-IL Cho
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Patent number: 9594501Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.Type: GrantFiled: August 21, 2013Date of Patent: March 14, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Jin Lim, Byung-Hwan Kim, Youn-Soo Kim, Hyung-Jin Kim, Jeong-Hwan Noh, In-Su Park, Jung-Il Cho
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Patent number: 9293360Abstract: A semiconductor memory device includes a semiconductor substrate in which an active region and an isolation region are defined, a tunnel insulating layer and a floating gate formed on the semiconductor substrate in the active region, a trench formed in the semiconductor substrate in the isolation region, a dielectric layer formed along a top surface and a portion of a side surface of the floating gate, wherein the dielectric layer extends higher than a surface of the semiconductor substrate in the isolation region and defines an air gap in the trench, and a control gate formed on the dielectric layer, wherein the dielectric layer includes the first nitride layer, a first oxide layer, a second nitride layer and a second oxide layer.Type: GrantFiled: June 18, 2014Date of Patent: March 22, 2016Assignee: SK Hynix Inc.Inventors: Jung Il Cho, Jong Moo Choi, Eun Joo Jung
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Publication number: 20150309684Abstract: A method for configuring multi-vision by an electronic device is provided. The method includes obtaining, by the electronic device, a user input, generating first user input information from the obtained user input, determining whether the electronic device is one of a master device and a slave device, when the electronic device is determined to be the master device, obtaining second user input information from one or more other electronic devices, and determining an arrangement structure of one of the master device and the slave device based on one of the first user input information and the second user input information.Type: ApplicationFiled: April 23, 2015Publication date: October 29, 2015Inventors: Gyu-Cheol CHOI, Hyung-Jin KIM, Jung-Il CHO
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Publication number: 20140295641Abstract: A semiconductor memory device includes a semiconductor substrate in which an active region and an isolation region are defined, a tunnel insulating layer and a floating gate formed on the semiconductor substrate in the active region, a trench formed in the semiconductor substrate in the isolation region, a dielectric layer formed along a top surface and a portion of a side surface of the floating gate, wherein the dielectric layer extends higher than a surface of the semiconductor substrate in the isolation region and defines an air gap in the trench, and a control gate formed on the dielectric layer, wherein the dielectric layer includes the first nitride layer, a first oxide layer, a second nitride layer and a second oxide layer.Type: ApplicationFiled: June 18, 2014Publication date: October 2, 2014Inventors: Jung Il CHO, Jong Moo CHOI, Eun Joo JUNG
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Publication number: 20140151779Abstract: A semiconductor memory device includes a semiconductor substrate in which an active region and an isolation region are defined, a tunnel insulating layer and a floating gate formed on the semiconductor substrate in the active region, a trench formed in the semiconductor substrate in the isolation region, a dielectric layer formed along a top surface and a portion of a side surface of the floating gate, wherein the dielectric layer extends higher than a surface of the semiconductor substrate in the isolation region and defines an air gap in the trench, and a control gate formed on the dielectric layer, wherein the dielectric layer includes the first nitride layer, a first oxide layer, a second nitride layer and a second oxide layer.Type: ApplicationFiled: February 28, 2013Publication date: June 5, 2014Applicant: SK HYNIX INC.Inventors: Jung Il CHO, Jong Moo CHOI, Eun Joo JUNG
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Publication number: 20140055390Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.Type: ApplicationFiled: August 21, 2013Publication date: February 27, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Yong-Jin Lim, Byung-Hwan Kim, Youn-Soo Kim, Hyung-Jin Kim, Jeong-Hwan Noh, In-Su Park, Jung-IL Cho
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Patent number: 7348240Abstract: A method for forming a metal line in a flash memory device includes sequentially forming a first inter-layer insulation layer, an etch stop layer, a second inter-layer insulation layer, and a hard mask layer over a substrate where a contact plug is formed, etching the hard mask layer to form a hard mask pattern, performing a first etching process on the second inter-layer insulation layer to form a trench exposing a portion of the etch stop layer, performing a second etching process to selectively remove the hard mask pattern and the exposed portion of the etch stop layer, forming a spacer over sidewalls of the trench, and forming a metal line filling the trench to make contact with the contact plug. The hard mask layer and the etch stop layer include substantially the same material. The spacer includes substantially the same material as the first and second inter-layer insulation layers.Type: GrantFiled: June 28, 2006Date of Patent: March 25, 2008Assignee: Hynix Semiconductor Inc.Inventor: Jung-Il Cho
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Publication number: 20070072372Abstract: A method for forming a metal line in a flash memory device includes sequentially forming a first inter-layer insulation layer, an etch stop layer, a second inter-layer insulation layer, and a hard mask layer over a substrate where a contact plug is formed, etching the hard mask layer to form a hard mask pattern, performing a first etching process on the second inter-layer insulation layer to form a trench exposing a portion of the etch stop layer, performing a second etching process to selectively remove the hard mask pattern and the exposed portion of the etch stop layer, forming a spacer over sidewalls of the trench, and forming a metal line filling the trench to make contact with the contact plug. The hard mask layer and the etch stop layer include substantially the same material. The spacer includes substantially the same material as the first and second inter-layer insulation layers.Type: ApplicationFiled: June 28, 2006Publication date: March 29, 2007Inventor: Jung-Il Cho
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Patent number: 6908805Abstract: The present invention is provided to manufacture a dual gate oxide film. According to the present invention, it is possible to obtain a high-quality NO gate oxide film for high voltage and a high-quality NO gate oxide film for low voltage where nitrogen is distributed uniformly in the entire oxide films by carrying out a rapid annealing process in an inert atmosphere after carrying out an NO annealing process in order to prevent a phenomenon that nitrogen is not distributed uniformly and segregated in a gate oxide film for high voltage due to application of the NO annealing process after forming a gate oxide film for low voltage.Type: GrantFiled: December 18, 2003Date of Patent: June 21, 2005Assignee: Hynix Semiconductor Inc.Inventors: Jung Il Cho, Seung Cheol Lee, Sang Wook Park
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Publication number: 20040253780Abstract: The present invention is provided to manufacture a dual gate oxide film. According to the present invention, it is possible to obtain a high-quality NO gate oxide film for high voltage and a high-quality NO gate oxide film for low voltage where nitrogen is distributed uniformly in the entire oxide films by carrying out a rapid annealing process in an inert atmosphere after carrying out an NO annealing process in order to prevent a phenomenon that nitrogen is not distributed uniformly and segregated in a gate oxide film for high voltage due to application of the NO annealing process after forming a gate oxide film for low voltage.Type: ApplicationFiled: December 18, 2003Publication date: December 16, 2004Inventors: Jung Il Cho, Seung Cheol Lee, Sang Wook Park
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Patent number: 6780743Abstract: Disclosed is a method of forming a floating gate in a date flash memory device on which first and second polysilicon films are stacked. After the first polysilicon film is formed, a SiH4 gas is introduced to decompose SiH4 and SiO2 into Si and H2 and Si and O2. A N2 anneal process is then implemented so that the decomposed H2 gas and O2 gas react to a N2 gas and are then outgassed. Next, a SiH4 gas and a PH3 gas are introduced to form the second polysilicon film. A native oxide film within the interface of the first polysilicon film and the second polysilicon film is removed to improve characteristics of the data flash memory device.Type: GrantFiled: July 31, 2003Date of Patent: August 24, 2004Assignee: Hynix Semiconductor Inc.Inventors: Sang Wook Park, Seung Cheol Lee, Jung Il Cho
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Publication number: 20040115885Abstract: Disclosed is a method of forming a floating gate in a date flash memory device on which first and second polysilicon films are stacked. After the first polysilicon film is formed, a SiH4 gas is introduced to decompose SiH4 and SiO2 into Si and H2 and Si and O2. A N2 anneal process is then implemented so that the decomposed H2 gas and O2 gas react to a N2 gas and are then outgassed. Next, a SiH4 gas and a PH3 gas are introduced to form the second polysilicon film. A native oxide film within the interface of the first polysilicon film and the second polysilicon film is removed to improve characteristics of the data flash memory device.Type: ApplicationFiled: July 31, 2003Publication date: June 17, 2004Inventors: Sang Wook Park, Seung Cheol Lee, Jung Il Cho
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Publication number: 20020001898Abstract: A method of manufacturing a flash memory cell is disclosed. The method comprises the steps of forming an oxide film on a semiconductor substrate in which a device separation film is formed and then patterning the oxide film to expose the semiconductor substrate at a portion in which a floating gate will be formed; sequentially forming a tunnel oxide film and a first polysilicon layer on the entire structure, and then flattening the first polysilicon layer until the tunnel oxide film is exposed to form a floating gate; etching the tunnel oxide film and the oxide film in the exposed portion to a given thickness and the forming a dielectric film on the entire structure; sequentially forming a second polysilicon layer, a tungsten silicide layer and a hard mask and then patterning them to form a control gate; and injecting impurity ions into the semiconductor substrate at the both sides of the floating gate to form a junction region.Type: ApplicationFiled: June 15, 2001Publication date: January 3, 2002Inventors: Soo Young Park, Jung Il Cho