Abstract: A display device includes a substrate including a display region and a peripheral region, display structures at the display region of the substrate, a plurality of blocking structures at the peripheral region of the substrate wherein the blocking structures have heights different from each other, an organic layer on the display structures and the blocking structures, and an inorganic layer on the organic layer.

Abstract: Disclosed are an apparatus and method for constructing an intrusion detection system applied to CAN communication. The method for constructing an intrusion detection system applied to CAN communication may include extracting standard information by parsing an input file associated with CAN communication, setting a policy rule by applying at least one of a static ruleset and a custom ruleset using the extracted standard information, and creating a policy file to be applied to the intrusion detection system by packing the standard information and the policy rule.

Abstract: The present invention relates to an integrated connector and a heat exchanger including the same, in which a connector main body is formed by pressing one pipe, a cap is press-fitted into the connector main body, such that the integrated connector is formed so that an interior of the connector main body is blocked by the cap. Therefore, the number of components used to manufacture a connector, which connects and securely couples a header tank and a gas-liquid separator, may be reduced, the integrated connector may be easily manufactured, and a brazing defect may be reduced at portions where the integrated connector is joined to the header tank and the gas-liquid separator of the heat exchanger.

Abstract: Proposed are a multipolar-type output apparatus and a control method for the multipolar-type output apparatus. The multipolar-type output apparatus includes a body, a handpiece, and a tip.

Abstract: An off-road travel assistive device includes a receiver configured to receive travel data of a vehicle, and an estimator. The estimator includes a road surface severity estimator configured to estimate road surface severity data based on the travel data of the vehicle. The device also includes a stuck probability determiner configured to determine probability of a stuck state of the vehicle occurring using the travel data and the road surface severity data. The stuck probability determiner determines stuck probability using a meta-model.

Abstract: A seller terminal for trading a NFT recording a management history of a used vehicle is provided. The seller terminal may include: a communication interface; an input/output unit; one or more processors; and a storage medium storing one or more programs configured to be executable by the one or more processors, wherein the one or more processors may be configured to receive a management history of a used vehicle through the input/output unit, transmit an issuance request for a non-fungible token (NFT), which records the management history of the used vehicle, to a blockchain network through the communication interface, transmitting the issuance request, meaning calling an issuance function 4 contract stored in the blockchain network, wherein the management history of the used vehicle may include at least one of accident history, maintenance history, mileage, and owner replacement history.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes: a plurality of lower lines disposed over a substrate and extending in a first direction; a plurality of upper lines disposed over the lower lines and extending in a second direction crossing the first direction; a plurality of memory cells disposed between the lower lines and the upper lines and overlapping intersection regions of the lower lines and the upper lines; and an air gap located between the upper lines and extending in the second direction.

Abstract: The present disclosure relates to a power conversion device and a control method thereof and, more specifically, to a power conversion device which may protect a switching element when performing stopping of driving, and a control method thereof. A power conversion device according to an embodiment of the present disclosure comprises a pulse width modulation (PWM) controller for outputting, to a gate driver, a first pulse width modulation signal for controlling a first switching element, a second pulse width modulation signal for controlling a second switching element, a third pulse width modulation signal for controlling a third switching element, and a fourth pulse width modulation signal for controlling a fourth switching element.

Abstract: A method for manufacturing a semiconductor device may include: forming a plurality of stacked structures over a substrate, the substrate including one or more peripheral circuit regions and one or more cell regions, the stacked structures including first conductive lines and initial memory cells respectively disposed over the first conductive lines, each of the stacked structures extending in a first direction; forming a first insulating layer between the stacked structures; forming second conductive lines over the stacked structures and the first insulating layer, each of the second conductive lines extending in a second direction; forming memory cells by etching the initial memory cells exposed by the second conductive lines; forming a second insulating layer between the second conductive lines and between the memory cells; and removing the first conductive lines, the memory cells, and the second conductive lines in the peripheral circuit regions.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes: a plurality of lower lines disposed over a substrate and extending in a first direction; a plurality of upper lines disposed over the lower lines and extending in a second direction crossing the first direction; a plurality of memory cells disposed between the lower lines and the upper lines and overlapping intersection regions of the lower lines and the upper lines; and an air gap located between the upper lines and extending in the second direction.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes: a plurality of lower lines disposed over a substrate and extending in a first direction; a plurality of upper lines disposed over the lower lines and extending in a second direction crossing the first direction; a plurality of memory cells disposed between the lower lines and the upper lines and overlapping intersection regions of the lower lines and the upper lines; and an air gap located between the upper lines and extending in the second direction.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes: a plurality of lower lines disposed over a substrate and extending in a first direction; a plurality of upper lines disposed over the lower lines and extending in a second direction crossing the first direction; a plurality of memory cells disposed between the lower lines and the upper lines and overlapping intersection regions of the lower lines and the upper lines; and an air gap located between the upper lines and extending in the second direction.

Abstract: A semiconductor integrated circuit device includes a semiconductor substrate, a lower electrode disposed on the semiconductor substrate wherein an upper surface of the lower electrode has a recess, an interlayer insulating layer disposed on the semiconductor substrate and the lower electrode, the interlayer insulating layer including a variable resistive region exposing the upper surface of the lower electrode, and a variable resistive layer filled in the variable resistive region that contacts the recess of the lower electrode. The variable resistive layer is formed to have an increased width toward a top and a bottom thereof.

Abstract: A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.

Abstract: A glass filler manufacturing process and product which enable the manufacture of dental composite and dental cement products having superior product stability and also having superior physical properties. The process makes use of barium glass filler and strontium glass filler, which have high-radiopacity properties but could not previously be used for dental composites and dental cement. By simply coating the surface of the barium glass or strontium glass filler with an oxide having acid-resistance properties, and then following with a heat-treatment process, a suitable dental composite can be produced.

Abstract: A semiconductor device includes a data storage layer formed over a semiconductor substrate in which a lower structure is formed, and an electrode structure formed on at least one side of the data storage layer over the semiconductor substrate. The electrode structure includes a metal pattern, and a graphene pattern formed over the metal pattern.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate in which a lower structure is formed, forming a phase-change material layer of a first state over the lower structure, transforming an upper region of the phase-change material layer of the first state into a phase-change material layer of a second state having an etch selectivity different from the phase-change material layer of the first state, removing the phase-change material layer of the second state, and forming an upper electrode over the phase-change material layer of the first state in which the phase-change material layer of the second state is removed.

Abstract: A resistive memory device may include a bottom structure, a memory cell structure disposed on the bottom structure, and a data storage material disposed to surround an outer sidewall of the memory cell structure.

Abstract: A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.