Abstract: A device for carbon capture from a CO2 containing source includes a cathode compartment including a cathode electrode, an anode compartment including an anode electrode, a middle compartment which includes an ion conducting layer, a cation exchange membrane, and an anion exchange membrane. The middle compartment is separated from the cathode and anode by the anion and cation exchange membranes. A method for carbon capture from a CO2 containing source includes providing the device, supplying the CO2 containing source to the cathode, reacting the CO2 from the source with an electrochemically generated species from the cathode to form a carbon species or directly reducing the CO2 at the cathode to form the carbon species, driving the carbon species to the middle compartment, and reacting, in the middle compartment, the carbon species with an oxidation product from the anode to form an exit product comprising CO2.

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

Abstract: A computer program stored on a computer-readable storage medium may be provided.

Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.

Abstract: Provided is a slurry composition for a metal film for a contact process. A polishing slurry composition includes abrasive particles, a compound including one or more functional groups capable of hydrogen bonding, a nonionic polymer including one or more hydrophilic functional groups in a repeating unit structure, and an oxidizer.

Abstract: An electronic device is disclosed. The electronic device may include a memory, and a processor electrically connected with the memory. The processor may be configured to install an application, allocate identification information, which is included in a preset range, to the installed application, store, at a first address of the memory, the identification information for indicating access privilege to a system resource, monitor the first address during running of a first process of the application, and terminate the first process, when the identification information stored at the first address is not included in the preset range. Moreover, various embodiment found through the disclosure are possible.

Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.

Abstract: A polishing slurry composition enabling implementation of multi-selectivity is provided. The polishing slurry composition includes: a polishing liquid including abrasive particles; and an additive liquid, in which the additive liquid includes a polymer having an amide bond, and a cationic polymer.

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

Abstract: A polishing slurry composition enabling implementation of multi-selectivity is provided. The polishing slurry composition includes: a polishing liquid including abrasive particles; and an additive liquid, in which the additive liquid includes a polymer having an amide bond, and a cationic polymer.

Abstract: A polishing slurry composition for a shallow trench isolation (STI) process is provided. The polishing slurry composition includes abrasive particles, a nonionic polymer, and a polar amino acid.

Abstract: The present invention relates to a polishing slurry composition for an STI process and, more particularly, to a polishing slurry composition for an STI process, the composition comprising: a polishing solution including polishing particles; and an additive solution containing a polysilicon film polishing barrier inclusive of a polymer having an amide bond.

Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

Abstract: A slurry composition for a chemical mechanical polishing (CMP) process includes about 0.1% by weight to about 10% by weight of polishing particles, about 0.001% by weight to about 1% by weight of an amine compound, about 0.001% by weight to about 1% by weight of a first cationic compound that is amino acid, about 0.001% by weight to about 1% by weight of a second cationic compound that is organic acid, and about 1% by weight to about 5% by weight of polyhydric alcohol including at least two hydroxyl groups.

Abstract: An electronic device is provided. The electronic device includes a memory configured to store an application and first unique information of the application, and at least one processor operatively connected with the memory. The at least one processor is configured to divide code of the application into a plurality of segments, select at least one segment among the plurality of segments, create second unique information in relation to the at least one segment, compare the first unique information and the second unique information, and determine whether the code of the application has been tampered with, based on a result of the comparison of the first unique information and the second unique information.

Abstract: An electronic device is disclosed. The electronic device may include a memory, and a processor electrically connected with the memory. The processor may be configured to install an application, allocate identification information, which is included in a preset range, to the installed application, store, at a first address of the memory, the identification information for indicating access privilege to a system resource, monitor the first address during running of a first process of the application, and terminate the first process, when the identification information stored at the first address is not included in the preset range. Moreover, various embodiment found through the disclosure are possible.

Abstract: The present invention relates to a slurry composition for polishing a high stepped region. The slurry composition for polishing a high stepped region according to an embodiment of the present invention comprises: a polishing liquid containing metal oxide abrasive particles dispersed by positive charges; and an additive liquid containing a polymer comprising at least one element capable of being activated as a positive charge, wherein the polishing selection ratio of the stepped region removal rate in an oxide film pattern wafer having convex portions and concave portions and the stepped region removal rate in an oxide film flat wafer is at least 5:1.

Abstract: The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.