Abstract: Various embodiments provide an MOS transistor, a formation method thereof, and an SRAM memory cell circuit. An exemplary MOS transistor can include a semiconductor substrate including a first groove on one side of a gate structure and a second groove on the other side of the gate structure. The first groove can have a sidewall perpendicular to a surface of the semiconductor substrate. The second groove can have a sidewall protruding toward a channel region under the gate structure. A stressing material can be disposed in the first groove to form a drain region and in the second groove to form a source region. Stress generated in the channel region of the MOS transistor can be asymmetric. The MOS transistor can be used as a transfer transistor in an SRAM memory cell circuit to increase both read and write margins of the SRAM memory.

Abstract: A method for defrost control of a refrigerator having a refrigeration and defrost system that includes a compressor, an evaporator, an evaporator fan and a heater. The refrigerator also has a control system to control the operation of the refrigerator. The method includes stopping the compressor operation; starting a defrost process; starting the heater; maintaining a start state over a preset period of time; closing off the heater; and starting the compressor. After starting the compressor and before the evaporator fan is started to perform the refrigeration operation, the evaporator fan is operated at least once briefly and intermittently.

Abstract: The present invention relates to a semiconductor device having a P-channel semiconductor region and a manufacturing method therefor. The method comprises: forming a gate dielectric layer on a substrate; forming a gate material layer on the gate dielectric layer; blanket pre-doping the gate material layer to introduce an N-type dopant thereto; and pre-doping with fluorine a region of the gate material layer designed to be said P-channel semiconductor device, such that the fluorine dopes an interface between the substrate and the region of the gate dielectric layer designated to be said P-channel semiconductor device. The semiconductor device further comprises an N-type semiconductor region in said gate material layer.

Abstract: The present invention discloses a semiconductor device and relates to the semiconductor field. The semiconductor device comprises: a PMOS transistor for processing a input signal, the PMOS transistor comprising a gate and a source, the source being connected to a first voltage source; and a restoring circuit connected to the PMOS transistor for preventing degradation of the PMOS transistor, wherein the restoring circuit makes the gate voltage of the PMOS transistor to be higher than the voltage of the first voltage source, when the input signal is at a high level. According to the semiconductor device of the present invention, a positive bias voltage is applied on the gate of the PMOS transistor through the restoring circuit when the PMOS transistor is turned off, which can accelerate electric parameter recovery for PMOS transistors and therefore improve the performance of PMOS transistors.

Abstract: A method for defrost control of a refrigerator having a refrigeration and defrost system that includes a compressor, an evaporator, an evaporator fan and a heater. The refrigerator also has a control system to control the operation of the refrigerator. The method includes stopping the compressor operation; starting a defrost process; starting the heater; maintaining a start state over a preset period of time; closing off the heater; and starting the compressor. After starting the compressor and before the evaporator fan is started to perform the refrigeration operation, the evaporator fan is operated at least once briefly and intermittently.

Abstract: An electric refrigerator includes a vacuum preservation system. The electric refrigerator includes a refrigerator body with a refrigeration compartment, and a vacuum preservation system inside the refrigerator body. The vacuum preservation system includes a vacuum preservation container inside the refrigeration compartment, a vacuum generation device for building up a vacuum in the vacuum preservation container, a control device for controlling a buildup in the vacuum, and a measuring and monitoring device for measuring and monitoring an operating state of the vacuum preservation system.