Abstract: An information processing apparatus (1) included in a welding training system includes a transmittance adjuster (14) capable of adjusting a transmittance of a window of a welding helmet in virtual space in multiple grades, and a display controller (17) configured to cause a display of an HMD (2) to display a situation of a welding operation in the virtual space at an illuminance corresponding to the adjusted transmittance. The transmittance adjuster (14) adjusts the transmittance based on a skill level of a trainee determined by a skill level determination unit (13).

Abstract: A silicon drift detector includes a housing and a silicon drift detection element that is disposed inside the housing. The housing includes an opening that is not closed. The silicon drift detection element includes a top surface facing the opening, and a light shielding film is provided on the top surface.

Abstract: In a control device of a vehicle power transmission device, a first meshing clutch has a drive power source side meshing member coupled to a power transmission member, an auxiliary drive wheel side meshing member coupled to the power transmission member, and an actuator engaging or releasing the drive power source side meshing member and the auxiliary drive wheel side meshing member, and when a rotation speed difference between a rotation speed of the drive power source side meshing member and a rotation speed of the auxiliary drive wheel side meshing member is larger than a predefined value at the time when a first meshing clutch is brought into an engaged state, a clamping pressure on a transmission belt is increased as compared to when a rotation speed difference is equal to or less than a predefined value.

Abstract: A space-debris capturing device includes a harpoon driven into target debris as space debris to be removed. The harpoon includes a first harpoon part having a large diameter, and a second harpoon part having a diameter smaller than the diameter of the first harpoon part and protruding from a leading surface in the direction of the drive of the first harpoon part into the target debris.

Abstract: In a control device of a vehicle power transmission device, a first meshing clutch has a drive power source side meshing member coupled to a power transmission member, an auxiliary drive wheel side meshing member coupled to the power transmission member, and an actuator engaging or releasing the drive power source side meshing member and the auxiliary drive wheel side meshing member, and when a rotation speed difference between a rotation speed of the drive power source side meshing member and a rotation speed of the auxiliary drive wheel side meshing member is larger than a predefined value at the time when a first meshing clutch is brought into an engaged state, a clamping pressure on a transmission belt is increased as compared to when a rotation speed difference is equal to or less than a predefined value.

Abstract: A method and an apparatus for discriminating a cardiac tissue using Raman scattering are provided which enable a noninvasive discrimination of the cardiac tissue to be accurately performed. The discrimination method includes: a step of irradiating a sample containing a cardiac tissue with excitation light; a step of detecting Raman scattering light from the sample; an analysis step of analyzing the detected Raman scattering light by a multivariate analysis using as an index, Raman scattering spectra which are specific to at least a living myocardial tissue, a necrotic myocardial tissue, a granulation tissue and a fibrotic tissue, respectively; and a step of discriminating the cardiac tissue in accordance with analysis results obtained in the analysis step.

Abstract: An object of this invention is to make it easy to adjust a position of the energy beam to irradiate and a position of a focal point of a light collecting mirror part, and to prevent displacement of the light collecting part due to vibration with a simple arrangement.

Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

Abstract: An object of this invention is to make it easy to adjust a position of the energy beam to irradiate and a position of a focal point of a light collecting mirror part, and to prevent displacement of the light collecting part due to vibration with a simple arrangement.

Abstract: The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.

Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

Abstract: The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.

Abstract: A method of forming a semiconductor device to have a gap between wirings formed on a substrate, which gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at zero degrees Celsius. In the method, the following steps are performed: (A) forming a wiring and a filling layer filled between wirings, on a substrate; (B) forming a gas permeable film on the wiring and the filling layer; (C) removing the filling layer through the gas permeable film so as to form a gap between the wirings; (D) filling a gas having a thermal conductivity equal to or higher than three times that of air at 0.degree. C. through the gas permeable film into the gap; and (E) forming a gas impermeable film on the gas permeable film.

Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

Abstract: A semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.

Abstract: The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.