Abstract: The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

Abstract: The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.

Abstract: Disclosed is a method of forming a cap insulating film at a high reliability prior to heat-treatment for removing an —OH group from a planarization insulating film (APL film) which is excellent in a gap fill ability and global planarization ability and which is formed by a liquid phase CVD process. The (lower) cap insulating film is formed by plasma CVD using a source gas containing an inorganic silane compound gas, O2 and a hydrocarbon; or an organic silane compound gas and O2. With this method, the cap insulating film can be formed without occurrence of harmful ammonia and particles in plasma.