Abstract: The present invention provides a method for removing iron from an iron-containing solution containing an iron ion, comprising adding a lithium ion battery cathode material containing manganese to an acidic sulfuric acid solution to obtain a cathode material-containing solution, and then precipitating a manganese ion as manganese dioxide in a mixed solution obtained by mixing the iron-containing solution with the cathode material-containing solution while precipitating the iron ion contained in the iron-containing solution as a solid.

Abstract: A magnetic memory according to an embodiment includes: an electrode including a lower face, an upper face opposed to the lower face, and a side face different from the lower and upper faces; a magnetoresistive element disposed on the upper face of the electrode, including a multilayer structure including a first magnetic layer disposed above the upper face of the electrode, a second magnetic layer disposed between the upper face of the electrode and the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a first insulating film disposed on the side face of the electrode; and a second insulating film including a first portion disposed on a side face of the multilayer structure of the magnetoresistive element, and a second portion, the first insulating film being disposed between the second portion and the side face of the electrode.

Abstract: Provided are a coloring composition having improved heat resistance; and a cured film, a color filter, a method for producing a color filter, and a solid-state imaging element and an image display device, each of which uses the coloring composition. The coloring composition includes a dye (A) represented by the following General Formula (I) and a polymerizable compound (B). General Formula (I) is (R)m-Q-(D)n, wherein Q represents an (m+n)-valent linking group, R represents a substituent, D represents a dye residue, m represents an integer of 0 to 6, n represents an integer of 2 to 8, and (m+n) represents an integer of 2 to 8. In the case where m is 2 or more, a plurality of R's may be different from each other, and in the case where n is 2 or more, a plurality of D's may be different from each other.

Abstract: The present invention provides a method for removing copper from lithium ion battery scrap containing copper, comprising a leaching step of adding the lithium ion battery scrap to an acidic solution and leaching the lithium ion battery scrap under a condition that an aluminum solid is present in the acidic solution; and a copper separating step of separating copper contained in the acidic solution as a solid from the acidic solution, after the leaching step.

Abstract: According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a second magnetic layer provided on the nonmagnetic layer; a first insulating layer provided at least on a side surface of the second magnetic layer; a second insulating layer covering at least a part of the first insulating layer; a conductive layer provided between the first insulating layer and the second insulating layer; and a first electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer. A height of a lower surface of the second portion is equal to or less than a height of an upper surface of the conductive layer.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: A curable composition contains a resin containing a curable group, a colorant, a polymerization inhibitor, and a polymerization initiator. A manufacturing method of the curable composition includes a colorant dispersing step of mixing together the resin containing a curable group, the colorant, and the polymerization inhibitor and a mixing step of mixing together the colorant dispersion and the polymerization initiator so as to obtain the curable composition. A cured film is obtained by curing the curable composition. A color filter, a solid-state imaging element, and an infrared sensor have the cured film. A manufacturing method of the cured film includes a curable composition layer-forming step, an exposure step, and a development step.

Abstract: A coloring composition having excellent light fastness, color migration properties, and flatness, a colorant, and a method for producing a colorant are provided. Further, a cured film, a color filter, a method for manufacturing a color filter, a solid-state imaging device, an image display device, and an organic electroluminescent element, each using such the coloring composition, are also provided. The coloring composition contains a colorant represented by General Formula (1) and a curable compound, and has a specific absorbance of 5 or more at a maximum absorption wavelength of 400 nm to 800 nm. R1 represents an (m+n)-valent linking group, P represents a monovalent substituent having a repeating units derived from a vinyl compound, D represents a colorant structure, and R2 and L1 each independently represent a single bond or a divalent linking group.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

Abstract: A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnxGay)100-zPtz, the (MnxGay)100-zPtz having a tetragonal crystal structure, where 45 atm %?x?75 atm %, 25 atm %?y?55 atm %, x+y=100 atm %, and 0 atm %<z?7 atm %.

Abstract: A method for processing lithium ion battery scrap includes a leaching step of leaching lithium ion battery scrap and subjecting the resulting leached solution to solid-liquid separation to obtain a first separated solution; an iron removal step of adding an oxidizing agent to the first separated solution and adjusting a pH of the first separated solution in a range of from 3.0 to 4.0, then performing solid-liquid separation and removing iron in the first separated solution to obtain a second separated solution; and an aluminum removal step of neutralizing the second separated solution to a pH range of from 4.0 to 6.0, then performing solid-liquid separation and removing aluminum in the second separated solution to obtain a third separated solution.

Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.

Abstract: According to one embodiment, a memory device includes: a first memory element arranged above a substrate; a first contact portion adjacent to the first memory element in a first direction parallel to a surface of the substrate; a second contact portion arranged above the first memory element in a second direction perpendicular to the surface of the substrate; and a second memory element arranged above the first contact portion in the second direction. First dimensions at upper parts of the first and second memory elements are smaller than second dimensions at lower parts of the first and second memory elements, and third dimensions at upper parts of the first and second contact portions are larger than fourth dimensions at lower parts of the first and second contact portions.

Abstract: A method for processing lithium ion battery scrap according to this invention includes a leaching step of leaching lithium ion battery scrap to obtain a leached solution; an aluminum removal step of neutralizing the leached solution to a pH range of from 4.0 to 6.0, then performing solid-liquid separation and removing aluminum in the leached solution to obtain a first separated solution; and an iron removal step of adding an oxidizing agent to the first separated solution and adjusting the pH in a range of from 3.0 to 5.0, then performing solid-liquid separation and removing iron in the first separated solution to obtain a second separated solution.

Abstract: According to one embodiment, a magnetic memory device includes a conductive underlayer having an amorphous structure and containing at least one first predetermined element selected from molybdenum (Mo), magnesium (Mg), rhenium (Re), tungsten (W), vanadium (V), and manganese (Mn), and a stacked structure provided on the underlayer, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

Abstract: A magnetic memory according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a first layer disposed between the first magnetic layer and the third magnetic layer, wherein the first layer contains at least one element selected from the group consisting of Co, Fe, Ni, and Mn, and at least one element selected from the group consisting of Ta, Mo, Zr, Nb, Hf, V, Ti, Sc, and La.

Abstract: An object of the present invention is to provide a curable composition capable of forming a cured film having excellent linearity of a pattern, and a light-shielding film, a color filter, a solid-state imaging device, and an infrared sensor, each formed using the curable composition. Another object of the present invention is to provide a pattern forming method and a method for manufacturing a color filter, each using the curable composition.

Abstract: A magnetoresistive element according to an embodiment includes: a first layer; a first magnetic layer; a second magnetic layer disposed between the first layer and the first magnetic layer; a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and an insulating layer disposed at least on side surfaces of the nonmagnetic layer, the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and the insulating layer including at least one element selected from the first group.

Abstract: A replaceable unit includes a body, a memory element, a holder, and a first post. The holder has a first hole and holds the memory element to the body. The first post is provided on the body, and includes a first insert and a first head. The first insert is inserted into the first hole. The first head is located on opposite side of the first insert to the body and covers a periphery of the first hole of the holder.