Abstract: A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) growing a first cladding layer of a first conductive type on a substrate; (b) growing a first optical guide layer of the first conductive type on the first cladding layer; (c) forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after the planarizing at least one side surface of the holes is a {10-10} facet.

Abstract: A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) of growing a first cladding layer of a first conductive type on a substrate; (b) of growing a first optical guide layer of the first conductive type on the first cladding layer; (c) of forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) of planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after said the planarizing, at least one side surface of the holes is a {10-10} facet.

Abstract: A radiation image acquiring system is provided. An X-ray image acquiring system irradiates X-rays to a subject from an X-ray source, and detects X-rays transmitted through the subject. The X-ray image acquiring system includes a first detector for detecting X-rays that are transmitted through the subject to generate first image data, a second detector arranged in parallel to the first detector with a dead zone region sandwiched therebetween, for detecting X-rays that are transmitted through the subject to generate second image data, and a timing control section for controlling detection timing of the second detector based on a dead zone width of the dead zone region so that first image data to be generated by the first detector and second image data to be generated by the second detector mutually correspond.

Abstract: A radiation image acquiring system is provided. An X-ray image acquiring system irradiates X-rays to a subject from an X-ray source, and detects X-rays transmitted through the subject. The X-ray image acquiring system includes a first detector for detecting X-rays that are transmitted through the subject to generate first image data, a second detector arranged in parallel to the first detector with a dead zone region sandwiched therebetween, for detecting X-rays that are transmitted through the subject to generate second image data, and a timing control section for controlling detection timing of the second detector based on a dead zone width of the dead zone region so that first image data to be generated by the first detector and second image data to be generated by the second detector mutually correspond.

Abstract: A radiation image acquiring system is provided. An X-ray image acquiring system irradiates X-rays to a subject from an X-ray source, and detects X-rays transmitted through the subject. The X-ray image acquiring system includes a first detector for detecting X-rays that are transmitted through the subject to generate first image data, a second detector arranged in parallel to the first detector with a dead zone region sandwiched therebetween, for detecting X-rays that are transmitted through the subject to generate second image data, and a timing control section for controlling detection timing of the second detector based on a dead zone width of the dead zone region so that first image data to be generated by the first detector and second image data to be generated by the second detector mutually correspond.

Abstract: A radiation image acquiring system is provided. An X-ray image acquiring system irradiates X-rays to a subject from an X-ray source, and detects X-rays transmitted through the subject. The X-ray image acquiring system includes a first detector for detecting X-rays that are transmitted through the subject to generate first image data, a second detector arranged in parallel to the first detector with a dead zone region sandwiched therebetween, for detecting X-rays that are transmitted through the subject to generate second image data, and a timing control section for controlling detection timing of the second detector based on a dead zone width of the dead zone region so that first image data to be generated by the first detector and second image data to be generated by the second detector mutually correspond.

Abstract: A radiation image acquiring system is provided. An X-ray image acquiring system irradiates X-rays to a subject from an X-ray source, and detects X-rays transmitted through the subject. The X-ray image acquiring system includes a first detector for detecting X-rays that are transmitted through the subject to generate first image data, a second detector arranged in parallel to the first detector with a dead zone region sandwiched therebetween, for detecting X-rays that are transmitted through the subject to generate second image data, and a timing control section for controlling detection timing of the second detector based on a dead zone width of the dead zone region so that first image data to be generated by the first detector and second image data to be generated by the second detector mutually correspond.

Abstract: An X-ray image acquiring system capable of improving the detection accuracy of a foreign substance contained in a subject is provided. An X-ray image acquiring system irradiates X-rays to a subject having a predetermined thickness from an X-ray source, and detects X-rays transmitted through the subject in a plurality of energy ranges. The X-ray image acquiring system includes a low-energy detector for detecting, in a low-energy range, X-rays having been transmitted through a region R1 extending in a thickness direction within the subject, a high-energy detector for detecting, in a high-energy range, X-rays having been transmitted through a region R2 extending in a thickness direction within the subject, and a timing control section for controlling detection timing of X-rays in the low-energy detector and the high-energy detector so that an inspecting region located at a predetermined site within the subject is included in the region R1 and the region R2.

Abstract: An X-ray image acquiring system capable of improving the detection accuracy of a foreign substance contained in a subject is provided. An X-ray image acquiring system irradiates X-rays to a subject having a predetermined thickness from an X-ray source, and detects X-rays transmitted through the subject in a plurality of energy ranges. The X-ray image acquiring system includes a low-energy detector for detecting, in a low-energy range, X-rays having been transmitted through a region R1 extending in a thickness direction within the subject, a high-energy detector for detecting, in a high-energy range, X-rays having been transmitted through a region R2 extending in a thickness direction within the subject, and a timing control section for controlling detection timing of X-rays in the low-energy detector and the high-energy detector so that an inspecting region located at a predetermined site within the subject is included in the region R1 and the region R2.

Abstract: A radiation image acquiring system is provided. An X-ray image acquiring system irradiates X-rays to a subject from an X-ray source, and detects X-rays transmitted through the subject. The X-ray image acquiring system includes a first detector for detecting X-rays that are transmitted through the subject to generate first image data, a second detector arranged in parallel to the first detector with a dead zone region sandwiched therebetween, for detecting X-rays that are transmitted through the subject to generate second image data, and a timing control section for controlling detection timing of the second detector based on a dead zone width of the dead zone region so that first image data to be generated by the first detector and second image data to be generated by the second detector mutually correspond.

Abstract: An X-ray image acquiring system capable of improving the detection accuracy of a foreign substance contained in a subject is provided. An X-ray image acquiring system 1 irradiates X-rays to a subject S having a predetermined thickness W from an X-ray source, and detects X-rays transmitted through the subject S in a plurality of energy ranges. The X-ray image acquiring system 1 includes a low-energy detector 32 for detecting, in a low-energy range, X-rays having been transmitted through a region R1 extending in a thickness direction within the subject S, a high-energy detector 42 for detecting, in a high-energy range, X-rays having been transmitted through a region R2 extending in a thickness direction within the subject S, and a timing control section 50 for controlling detection timing of X-rays in the low-energy detector 32 and the high-energy detector 42 so that an inspecting region E located at a predetermined site within the subject S is included in the region R1 and the region R2.

Abstract: A radiation image acquiring system that improves the detection accuracy of a foreign substance etc., in a subject is provided. An X-ray image acquiring system 1 irradiates X-rays to a subject S from an X-ray source, and detects X-rays in a plurality of energy ranges transmitted through the subject S.

Abstract: A III-nitride light emitting diode grown on a semipolar {20-2-1} plane of a substrate and characterized by high power, high efficiency and low efficiency droop.

Abstract: A light emitting diode (LED) device structure with a reduced Droop effect, and a method for fabricating the LED device structure. The LED is a III-nitride-based LED having an active layer or emitting layer comprised of a multi-quantum-well (MQW) structure, wherein there are eight or more quantum wells (QWs) in the MQW structure, and more preferably, at least nine QWs in the MQW structure. Moreover, the QWs in the MQW structure are grown at temperatures different from barrier layers in the MQW structure, wherein the barrier layers in the MQW structure are grown a temperatures at least 40° C. higher than the QWs in the MQW structure.

Abstract: A packaging method for light emitting diodes provides both high light extraction and heat dissipation using a transparent vertical stand structure. A light emitting diode (LED) is attached to a vertical stand structure for supporting the LED, wherein the LED is bonded to the vertical stand structure, so that one of the LED's sides faces vertically upwards, another of the LED's sides faces vertically downwards, a top surface of the LED faces horizontally sideways in one direction, and a bottom surface of the LED faces horizontally sideways in another direction. The vertical stand structure comprises a connecting stem between the LED and a header, and is made of a material that provides for heat dissipation and may also be transparent to light generated in the LED, such as sapphire or zinc oxide. The LED and the vertical stand structure may be encapsulated within a mold.

Abstract: A light emitting device with an increased light extraction efficiency includes a two-dimensional periodic structure in a surface thereof and has two layers that together form an asymmetric refractive index distribution with respect to the active layer, which is in between the two layers. The light emitting device includes a substrate layer, a first layer, an active layer and a second layer that are stacked sequentially. The first layer includes at least one layer, including a semiconductor cladding layer of a first conductivity type. At least one layer of the first layer has a refractive index that is lower than a refractive index of the active layer and lower than a refractive index of a layer of the second layer that is adjacent to the active layer. Each constituent layer of the second layer has a refractive index that is lower than the refractive index of the active layer.

Abstract: An X-ray image acquiring system capable of improving the detection accuracy of a foreign substance contained in a subject is provided. An X-ray image acquiring system 1 irradiates X-rays to a subject S having a predetermined thickness W from an X-ray source, and detects X-rays transmitted through the subject S in a plurality of energy ranges. The X-ray image acquiring system 1 includes a low-energy detector 32 for detecting, in a low-energy range, X-rays having been transmitted through a region R1 extending in a thickness direction within the subject S, a high-energy detector 42 for detecting, in a high-energy range, X-rays having been transmitted through a region R2 extending in a thickness direction within the subject S, and a timing control section 50 for controlling detection timing of X-rays in the low-energy detector 32 and the high-energy detector 42 so that an inspecting region E located at a predetermined site within the subject S is included in the region R1 and the region R2.

Abstract: A radiation image acquiring system that improves the detection accuracy of a foreign substance etc., in a subject is provided. An X-ray image acquiring system 1 irradiates X-rays to a subject S from an X-ray source, and detects X-rays in a plurality of energy ranges transmitted through the subject S.

Abstract: A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.

Abstract: A gallium nitride (GaN) based light emitting device, wherein the device comprises a first surface and a second surface, and the first surface and second surface are separated by a thickness of less than 100 micrometers, and preferably less than 20 micrometers. The first surface may be roughened or textured. A silver or silver alloy may be deposited on the second surface. The second surface of the device may be bonded to a permanent substrate.