Abstract: A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.

Abstract: A method of forming a resist pattern, including: step A in which a first resist pattern is formed on a substrate, step B in which a basic composition is applied to cover the first resist pattern, step C in which a base contained in the basic composition and the first resist pattern are neutralized to form a developing solution insoluble region on a surface of the first resist pattern, and step D in which the covered first resist pattern is developed, the basic composition containing a basic component, and the basic component containing a polymeric compound having a structural unit (x0) represented by general formula (x0-1) (R is H, C1˜5 alkyl group, C1˜5 halogenated alkyl group; Vx01 is divalent hydrocarbon group having ether bond or amide bond or divalent aromatic hydrocarbon group; Yx01 is single bond or divalent linking group; Rx1 is substituent having nitrogen atom).

Abstract: A polymeric compound having a structural unit represented by general formula (a0-1), and a resist composition containing the same (in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Va01 and Va02 each independently represents a hydrocarbon group of 2 to 10 carbon atoms; Va01-La0— represents Va01-C(?O)O— or Va01-OC(?O)—; Ra0 represents an acid dissociable, branched hydrocarbon group of 8 or more carbon atoms, an acid dissociable, monocyclic hydrocarbon group of 4 or more carbon atoms, or an acid dissociable, polycyclic hydrocarbon group, provided that methyl adamantyl group is excluded.

Abstract: A resist pattern formation method with enhanced resolution and process margin in forming a resist pattern. The method includes using a resist composition containing a high-molecular weight compound having a constituent unit represented by the general formula (a0-1) and conducting patterning by negative type development with a developing solution containing an organic solvent to forma resist pattern in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Va0 represents a divalent hydrocarbon group; na0 is an integer of 0 to 2; R1 represents a chain or cyclic aliphatic hydrocarbon group; R2 represents a group for forming a monocyclic group together with the carbon atom to which R1 is bonded; and R3 represents an optionally substituted cyclic group.

Abstract: A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid contains a high-molecular weight compound (A1) having a constituent unit (a0) represented by a general formula (a0-1) and a constituent unit (a1-1) including a monocyclic group-containing acid decomposable group whose polarity increases by the action of an acid. In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, chain alkyl group, or chain alkenyl group.

Abstract: A resist composition comprising a compound (m0) (wherein Rb1 represents an electron withdrawing group; Rb2 and Rb3 each independently represents an aryl group, an alkyl group or an alkenyl group, provided that Rb2 and Rb3 may be mutually bonded to form a ring with the sulfur atom; and X0? represents a monovalent counteranion).

Abstract: A method for forming a negative type resist pattern having a high residual film rate of exposed areas of a resist film by heating an exposed resist film and subjecting it to patterning by negative type development with a developing solution containing an organic solvent, in which a resist composition containing a high-molecular weight compound having a constituent unit represented by a particular general formula.

Abstract: A resist composition including a high-molecular weight compound having a constituent unit represented by general formula (a0-1), a constituent unit (a1) containing a group containing a monocyclic group or a chain group among acid decomposable groups whose polarity increases by action of acid, a constituent unit (a1?) containing a group containing a polycyclic group among acid decomposable groups whose polarity increases by the action of an acid, and a constituent unit (a2) containing a lactone-containing monocyclic group, with a proportion of the constituent unit (a1) being equal to a proportion of the constituent unit (a1?) or more; and a method for forming a resist pattern using the resist composition.

Abstract: A polymeric compound having a structural unit represented by general formula (a0-1), and a resist composition containing the same (in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Va01 and Va02 each independently represents a hydrocarbon group of 2 to 10 carbon atoms; Va01-La0— represents Va01-C(?O)O— or Va01-OC(?O)—; Ra0 represents an acid dissociable, branched hydrocarbon group of 8 or more carbon atoms, an acid dissociable, monocyclic hydrocarbon group of 4 or more carbon atoms, or an acid dissociable, polycyclic hydrocarbon group, provided that methyl adamantyl group is excluded.

Abstract: A resist pattern formation method with enhanced resolution and process margin in forming a resist pattern. The method includes using a resist composition containing a high-molecular weight compound having a constituent unit represented by the general formula (a0-1) and conducting patterning by negative type development with a developing solution containing an organic solvent to forma resist pattern in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Va0 represents a divalent hydrocarbon group; na0 is an integer of 0 to 2; R1 represents a chain or cyclic aliphatic hydrocarbon group; R2 represents a group for forming a monocyclic group together with the carbon atom to which R1 is bonded; and R3 represents an optionally substituted cyclic group.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In the formula (a5-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; each of Ra and Rb independently represents a hydrocarbon group which may have a substituent, and Ra and Rb may be mutually bonded to form a ring.

Abstract: A resist composition including a base component (A) that exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit (a1)) containing an acid decomposable group that exhibits increased polarity under action of acid, and the amount of the structural unit (a0) is less than 50 mol %, wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; R1 represents a divalent linking group; R2 represents a —SO2— containing cyclic group; and v represents 0 or 1.

Abstract: A resist composition including a high-molecular weight compound having a constituent unit represented by general formula (a0-1), a constituent unit (a1) containing a group containing a monocyclic group or a chain group among acid decomposable groups whose polarity increases by action of acid, a constituent unit (a1?) containing a group containing a polycyclic group among acid decomposable groups whose polarity increases by the action of an acid, and a constituent unit (a2) containing a lactone-containing monocyclic group, with a proportion of the constituent unit (a1) being equal to a proportion of the constituent unit (a1?) or more; and a method for forming a resist pattern using the resist composition.

Abstract: A resist composition comprising a compound (m0) (wherein Rb1 represents an electron withdrawing group; Rb2 and Rb3 each independently represents an aryl group, an alkyl group or an alkenyl group, provided that Rb2 and Rb3 may be mutually bonded to form a ring with the sulfur atom; and X0? represents a monovalent counteranion).

Abstract: A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid contains a high-molecular weight compound (A1) having a constituent unit (a0) represented by a general formula (a0-1) and a constituent unit (a1-1) including a monocyclic group-containing acid decomposable group whose polarity increases by the action of an acid. In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, chain alkyl group, or chain alkenyl group.

Abstract: A method of producing a copolymer, including copolymerizing a monomer (am0) containing a partial structure represented by formula (am0-1) shown below, a monomer (am1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a monomer (am5) containing an —SO2— containing cyclic group in the presence of a nitrogen-containing compound (X) having a conjugated acid with an acid dissociation constant of less than 10 (in the formula, *0 to *4 each represents a valence bond).

Abstract: A method for forming a negative type resist pattern having a high residual film rate of exposed areas of a resist film by heating an exposed resist film and subjecting it to patterning by negative type development with a developing solution containing an organic solvent, in which a resist composition containing a high-molecular weight compound having a constituent unit represented by a particular general formula.

Abstract: A surface modifying material for forming a surface modifying layer provided between a substrate and a resist film, the surface modifying material including an epoxy resin having a weight average molecular weight of 1,000 to 50,000; a method of forming a resist pattern, including: forming a surface modifying layer on a substrate using the surface modifying material, forming a resist film on the substrate, on which the surface modified layer has been formed, using a resist composition, conducting exposure of the resist film, and alkali developing the resist film to form a resist pattern; and a method of forming a pattern, including: etching the substrate, on which a resist pattern has been formed by the method of forming a resist pattern.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In formula (a5-1), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group, X represents single bond or divalent linking group, W represents a cyclic alkylene group which may include an oxygen atom at arbitrary position, each of Ra and Rb independently represents a hydrogen atom or an alkyl group which may include an oxygen atom at arbitrary position, or alternatively, Ra and Rb may be bonded to each other to form a ring together with the nitrogen atom in the formula, and p represents integer of 1 to 3.

Abstract: A resist composition, a method of forming a resist pattern using the resist composition, a novel polymeric compound and a compound useful as a monomer for the polymeric compound, the resist composition including a base component (A) that exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) that generates acid upon exposure, the base component (A) containing a resin component (A0) including a structural unit (a0) represented by general formula (a0) shown below in which A represents a divalent linking group; and R1 represents a hydrogen atom or a hydrocarbon group of 1 to 6 carbon atoms which may have a substituent.