Abstract: There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

Abstract: An Al2O3 film for covering a ferroelectric capacitor is formed by a sputtering process. The thickness of the Al2O3 film is preferably optimized according to amount of remanent polarization and fatigue tolerance required for the ferroelectric capacitor, for example, 10 nm to 100 nm. Next, oxygen is supplied to a PZT film via the Al2O3 film by executing a heat treatment in an oxygen atmosphere. As a result, an oxygen deficit in the PZT film is made up for. At this time, evaporation of Pb in the PZT film is suppressed because of the Al2O3 film, and deterioration of the fatigue tolerance responsive to decrease of Pb amount is suppressed. Subsequently, another Al2O3 film is formed as a second protective film by the sputtering process for opposing the deterioration factor in later process. The thickness of the Al2O3 film is preferably the thickness which sufficiently protects the ferroelectric capacitor from the deterioration factor in later wiring process.

Abstract: An object of this invention is to get a circuit board and a semiconductor module with high endurance against thermal cycles, and which is hard to be broken under thermal cycles, even if thick metal circuit board and thick metal heat sink are used, corresponding to high power operation of semiconductor chip. This circuit board comprises, an insulating-ceramic substrate, a metal circuit plate bonded to one face of the insulating-ceramic substrate, a metal heat sink bonded to another face of the insulating-ceramic substrate, wherein (t12?t22)/tc2/K<1.5, here, thickness of the insulating ceramics substrate is tc, thickness of the metal circuit plate is t1, thickness of the metal heat sink is t2, and internal fracture toughness value of the insulating ceramics substrate is K.

Abstract: To provide a current controller capable of constantly detecting an offset value of a current detection system, the offset value overlapping with a current detection value, in a state of regular operation of a motor to correct the current detection value and capable of current detection with high accuracy and a current offset correction method of the same. A carrier wave peak-trough judging part 10 is provided to discriminating the peak and the trough of a carrier wave. An A/D converted value detected in falling from the peak of the carrier wave is used as a current detection value. An A/D converted value detected in rising from the trough of the carrier wave is used as an offset value in the case that a modulated wave command is larger than a comparison standard value capable of computation by means of a calculation formula. On the basis of the current detection value and the offset value, carried out is an operation of a current detection correction value.

Abstract: In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of ? type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in ? type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.

Abstract: A flow cell 1 is provided with a flow channel 2 which has rounded corners 3 in section. A measuring sample under high pressure is introduced into the flow channel 2 formed in the flow cell 1 and particles existing in the measuring sample are measured. The measuring sample is in a liquid phase, a gaseous phase or a super critical phase above 1 MPa.

Abstract: In a sound receiver, a sound wave is directly received by microphones at a predetermined phase difference. The microphones are arranged in opening cavities of a casing, at positions that are different from the volume center points of the opening cavities. The microphones are supported by supporting springs in a state of not closely contacting inner peripheral walls. The sound wave received by the microphones is input to a signal processing unit and after a signal component in a predetermined low frequency band is removed by a filter, the resulting sound wave is amplified by an amplifier and is made in phase by a phase shifter and output.

Abstract: A semiconductor device manufacturing method has a step forming a transistor layer portion on a semiconductor substrate, and a step forming a ferroelectric capacitor portion including a lower electrode, a ferroelectric substance and an upper electrode above the transistor layer portion, wherein the step forming the ferroelectric capacitor portion includes adjusting an area of the upper electrode on the basis of manufacturing parameters of the ferroelectric capacitor portion.

Abstract: A mat-shaped thermal insulator made of inorganic fiber, wherein at least a part of inorganic fibers is built-up in a direction parallel to lateral surfaces of the insulator, and said insulator is formed by cutting a fibrous built-up article formed by building-up inorganic fibers, to form cut built-up articles, rotating at least one of the cut articles by an angle of 90 degrees in a direction perpendicular to a longitudinal direction, to form a rotated built-up article in which the inorganic fibers are built-up in a direction parallel to lateral sides of the cut article, and integrating the cut articles and/or the rotated article transversally in a direction perpendicular to cutting direction. Preferably, the lateral surfaces of the insulator are inclined. Still preferably, longitudinal cuts are formed on the lateral surfaces of the insulator so as to make the insulator partially compressible.

Abstract: A semiconductor device having both high strength and high thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit board 1a for a resin encapsulated semiconductor module device has a configuration where a silicon nitride plate 2 with a thickness of 0.635 mm has copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active metal. A copper plate 3a is bonded to the surface side of the silicon nitride plate 2, and a prescribed circuit pattern is formed on the copper plate 3a. Tin-silver-copper cream solder layers 4a and 4b with a thickness of 200 ?m are formed at a prescribed location on the circuit pattern 3a on which a semiconductor element 6 is mounted and at a prescribed location of a base plate 1 on which the circuit board 1a is disposed.

Abstract: In an electrostatic atomizing hairdryer, electrostatically atomized mist generated in an electrostatic atomizing unit is effectively scattered into airflow emitted from a main body of the hairdryer so that the mist can be sprayed to hair uniformly and a time necessary for treatment of hair can be shortened. A tank constituting the electrostatic atomizing unit is detachably provided on a portion in the vicinity of an outer periphery of the main body, and an electrode unit for generating the mist is provided in a path of airflow sucked in an inside of the main body so as to be insulated from heat of a heating unit by an adiabator. A mist emitting opening from which the mist is emitted is disposed on a plane substantially the same as and at substantially the center of an air exit opening of the main body. Thereby, the mist emitted from the mist emitting opening is effectively scattered into the airflow emitted from the air exit opening.

Abstract: A sound receiver includes a casing having multiple cavities which house multiple microphones and through which sound waves are received. A first sound wave is directly received by microphones. A second sound wave is reflected by an inner wall of the cavities and changes in phase corresponding to the material of the inner wall. The material of the inner wall differs for each cavity, thereby effecting a different change in phase of the second sound wave at each of the inner walls.

Abstract: Sound waves having a proper phase difference are received by microphones fixed in a mesh-formed casing, while other sound waves pass through the casing, and reach a front surface of a diffuse reflection member. The randomly uneven front surface of the diffuse reflection member diffusely reflects the sound waves, thereby preventing the reflected sound waves from reaching the microphones at the proper phase difference. Any reflected sound waves that do reach the microphones are received at a phase difference that is different from the proper phase difference and are determined to be noise by a sound-source determining circuit, thereby enabling a sound receiver to receive only sound waves having the proper phase difference, and hence, improving directivity thereof.

Abstract: There are contained first and second conductive plugs formed in first insulating layer, an island-like oxygen-barrier metal layer for covering the first conductive plug, an oxidation-preventing insulating layer formed on the first insulating layer to cover side surfaces of the oxygen-barrier metal layer, a capacitor having a lower electrode formed on the oxygen-barrier metal layer and the oxidation-preventing insulating layer, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, a second insulating layer for covering the capacitor and the oxidation-preventing insulating layer, a third hole formed in respective layers from the second insulating layer to the oxidation-preventing insulating layer on the second conductive plug, and a third conductive plug formed in the third hole and connected to the second conductive plug.

Abstract: There are contained first and second conductive plugs formed in first insulating layer, an island-like oxygen-barrier metal layer for covering the first conductive plug, an oxidation-preventing insulating layer formed on the first insulating layer to cover side surfaces of the oxygen-barrier metal layer, a capacitor having a lower electrode formed on the oxygen-barrier metal layer and the oxidation-preventing insulating layer, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, a second insulating layer for covering the capacitor and the oxidation-preventing insulating layer, a third hole formed in respective layers from the second insulating layer to the oxidation-preventing insulating layer on the second conductive plug, and a third conductive plug formed in the third hole and connected to the second conductive plug.

Abstract: Efficient screening of genes that influence pathological conditions or survival of animals infected with pathogen is enabled by the use of a full-length cDNA library as DNAs for immunizing animals in place of a genomic DNA library, used in the conventional ELI method.

Abstract: A sulfamoyl compound of the general formulae (1): wherein R1 and R2 are each independently C1-4 alkyl, or R1 and R2 together are C4-6 alkylene or C4-6 alkyleneoxy, Y is H, halogen, C1-8 alkyl, C1-8 alkoxy, C1-8 alkylthio, C1-8 haloalkyl, C1-8 haloalkoxy or C1-8 haloalkylthio, A is a predetermined heterocyclic group, B is a predetermined heterocyclic group which is identical with or different from A, W is a chemical bond or O, V is O or S, D, E, F and G are each independently N, CR7, CR8, CR9 or CR10, and R3, R4, R5, R6, R7, R8, R9, R10 and R11 are each independently predetermined group such as H, or an unsubstituted or substituted aliphatic, aromatic or heterocyclic group. The sulfamoyl compound is useful as an agricultural and horticultural fungicide.

Abstract: In an electrostatic atomizing hairdryer, electrostatically atomized mist generated in an electrostatic atomizing unit is effectively scattered into airflow emitted from a main body of the hairdryer so that the mist can be sprayed to hair uniformly and a time necessary for treatment of hair can be shortened. A tank constituting the electrostatic atomizing unit is detachably provided on a portion in the vicinity of an outer periphery of the main body, and an electrode unit for generating the mist is provided in a path of airflow sucked in an inside of the main body so as to be insulated from heat of a heating unit by an adiabator. A mist emitting opening from which the mist is emitted is disposed on a plane substantially the same as and at substantially the center of an air exit opening of the main body. Thereby, the mist emitted from the mist emitting opening is effectively scattered into the airflow emitted from the air exit opening.

Abstract: There is provided a thinner high frequency power module structure having reduced the mounting area. An insulated board is provided with a composite metal board in which the Cu2O powder particles are dispersed into a matrix metal (Cu) (amount of addition of Cu2O: 20 vol %; thermal expansion coefficient: 10.0 ppm/° C.; thermal conductivity: 280 W/m•K; thickness: 1 mm; size: 42.4×85 mm), a silicon nitride board (thermal expansion coefficient: 3.4 ppm/° C.; thermal conductivity: 90 W/m•K; thickness: 0.3 mm; size: 30×50 mm) deposited with Ag-system bonding metal layer to one principal surface of the composite metal board, and a wiring metal board formed of copper or copper alloy provided to the other principal surface of the ceramics insulated board. For example, the bonding metal layer is adjusted in the thickness to 50 ?m, while the wiring metal board is also adjusted in the thickness to 0.4 mm.

Abstract: A semiconductor device having both high strength and high thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit board 1a for a resin encapsulated semiconductor module device has a configuration where a silicon nitride plate 2 with a thickness of 0.635 mm has copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active metal. A copper plate 3a is bonded to the surface side of the silicon nitride plate 2, and a prescribed circuit pattern is formed on the copper plate 3a. Tin-silver-copper cream solder layers 4a and 4b with a thickness of 200 ?m are formed at a prescribed location on the circuit pattern 3a on which a semiconductor element 6 is mounted and at a prescribed location of a base plate 1 on which the circuit board 1a is disposed.