Patents by Inventor Junichiro Fujimagari
Junichiro Fujimagari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240006449Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus capable of manufacturing more conforming products. A first semiconductor substrate is provided with a first pad used for connection with the outside, separately from a dedicated pad used for inspection in a manufacturing process. A second semiconductor substrate is provided with a second pad used for inspection in a manufacturing process. Then, when the first semiconductor substrate and the second semiconductor substrate are layered in units of chips after inspection for guaranteeing KGD is performed on each of the first semiconductor substrate and the second semiconductor substrate, the first pad and the second pad are electrically connected to each other via a first electrode provided in the first semiconductor substrate and a second electrode provided in the second semiconductor substrate. The present technology can be applied to a layered CMOS image sensor, for example.Type: ApplicationFiled: November 5, 2021Publication date: January 4, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Junichiro FUJIMAGARI
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Patent number: 11862656Abstract: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: GrantFiled: April 5, 2022Date of Patent: January 2, 2024Assignee: SONY GROUP CORPORATIONInventors: Jun Ogi, Junichiro Fujimagari, Susumu Inoue, Atsushi Fujiwara
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Patent number: 11647890Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.Type: GrantFiled: August 17, 2021Date of Patent: May 16, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Junichiro Fujimagari, Tomohiro Ohkubo
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Publication number: 20220231070Abstract: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: ApplicationFiled: April 5, 2022Publication date: July 21, 2022Applicant: Sony Group CorporationInventors: Jun OGI, Junichiro FUJIMAGARI, Susumu INOUE, Atsushi FUJIWARA
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Patent number: 11322539Abstract: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: GrantFiled: June 3, 2020Date of Patent: May 3, 2022Assignee: SONY CORPORATIONInventors: Jun Ogi, Junichiro Fujimagari, Susumu Inoue, Atsushi Fujiwara
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Publication number: 20210408097Abstract: To provide a solid-state imaging device capable of further improving quality. Provided is a solid-state imaging device including: a first semiconductor element having a first semiconductor layer provided with a first through via and a photoelectric conversion unit configured to photoelectrically convert light that has been incident, a connection part that is wider than the first through via and is provided outside a region where the photoelectric conversion unit is provided on a surface of the first semiconductor layer on a side for receiving the light, connection wiring provided on the surface and configured to connect the first through via and the connection part, and a first passivation layer formed on the surface side; a second semiconductor element mounted on the first semiconductor element by the connection part; and a first guard ring formed on an outer peripheral portion of the first semiconductor element to surround the first semiconductor element.Type: ApplicationFiled: August 16, 2019Publication date: December 30, 2021Inventors: KENTARO AKIYAMA, JUNICHIRO FUJIMAGARI
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Publication number: 20210375976Abstract: An imaging device according to an embodiment of the present disclosure includes: a semiconductor layer having one surface serving as a light incident surface and another surface opposed to the one surface, and having a light reception region and a peripheral region in the one surface, the light reception region in which a plurality of photoelectric converters that performs photoelectric conversion on incident light is arranged, and the peripheral region provided around the light reception region; a through via that penetrates between the one surface and the other surface; a first coupling section that is provided on the peripheral region on the one surface side, and has a width wider than the through via; a second coupling section that is provided on the peripheral region on the one surface side, and is used for coupling to an external substrate; a first semiconductor element including a coupling wiring line that electrically couples the first coupling section, the second coupling section, and the through viaType: ApplicationFiled: October 18, 2019Publication date: December 2, 2021Inventor: Junichiro FUJIMAGARI
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Publication number: 20210375817Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.Type: ApplicationFiled: August 17, 2021Publication date: December 2, 2021Inventors: JUNICHIRO FUJIMAGARI, TOMOHIRO OHKUBO
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Patent number: 11121112Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.Type: GrantFiled: February 19, 2018Date of Patent: September 14, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Junichiro Fujimagari, Tomohiro Ohkubo
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Publication number: 20200295071Abstract: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: ApplicationFiled: June 3, 2020Publication date: September 17, 2020Applicant: Sony CorporationInventors: Jun OGI, Junichiro FUJIMAGARI, Susumu INOUE, Atsushi FUJIWARA
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Patent number: 10707259Abstract: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: GrantFiled: January 8, 2019Date of Patent: July 7, 2020Assignee: Sony CorporationInventors: Jun Ogi, Junichiro Fujimagari, Susumu Inoue, Atsushi Fujiwara
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Publication number: 20190385968Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.Type: ApplicationFiled: February 19, 2018Publication date: December 19, 2019Inventors: JUNICHIRO FUJIMAGARI, TOMOHIRO OHKUBO
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Publication number: 20190148445Abstract: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: ApplicationFiled: January 8, 2019Publication date: May 16, 2019Applicant: SONY CORPORATIONInventors: Jun OGI, Junichiro FUJIMAGARI, Susumu INOUE, Atsushi FUJIWARA
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Patent number: 10199419Abstract: There is provided a semiconductor device including: a plurality of bumps (13) on a first semiconductor substrate (11); and a lens material (57) in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: GrantFiled: February 22, 2016Date of Patent: February 5, 2019Assignee: Sony CorporationInventors: Jun Ogi, Junichiro Fujimagari, Susumu Inoue, Atsushi Fujiwara
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Patent number: 9997552Abstract: The present technology relates to a solid-state imaging device, an imaging apparatus, an electronic apparatus, and a semiconductor device, which can prevent overflow of an underfilling resin filled in a portion adapted to connect the substrate to the flip chip and can prevent secondary damages such as electric short-circuit and contact with processing equipment. By utilizing a molding technology of forming an on-chip lens, a dam is formed in a ring shape or a square shape in a manner surrounding a range where a flip chip is connected via a solder bump on an upper layer of a substrate of the solid-state imaging device and provided in order to form the on-chip lens. This can block the underfilling resin filled in the range where the substrate and the flip chip are electrically connected. The present technology can be applied to a solid-state imaging device.Type: GrantFiled: August 28, 2015Date of Patent: June 12, 2018Assignee: Sony Semiconductor Solutions CorporationInventors: Susumu Inoue, Kentaro Akiyama, Junichiro Fujimagari, Keita Ishikawa, Jun Ogi, Yukio Tagawa, Takuya Nakamura, Satoru Wakiyama
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Publication number: 20180026068Abstract: There is provided a semiconductor device including: a plurality of bumps (13) on a first semiconductor substrate (11); and a lens material (57) in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: ApplicationFiled: February 22, 2016Publication date: January 25, 2018Inventors: Jun OGI, Junichiro FUJIMAGARI, Susumu INOUE, Atsushi FUJIWARA
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Publication number: 20170256577Abstract: The present technology relates to a solid-state imaging device, an imaging apparatus, an electronic apparatus, and a semiconductor device, which can prevent overflow of an underfilling resin filled in a portion adapted to connect the substrate to the flip chip and can prevent secondary damages such as electric short-circuit and contact with processing equipment. By utilizing a molding technology of forming an on-chip lens, a dam is formed in a ring shape or a square shape in a manner surrounding a range where a flip chip is connected via a solder bump on an upper layer of a substrate of the solid-state imaging device and provided in order to form the on-chip lens. This can block the underfilling resin filled in the range where the substrate and the flip chip are electrically connected. The present technology can be applied to a solid-state imaging device.Type: ApplicationFiled: August 28, 2015Publication date: September 7, 2017Inventors: Susumu INOUE, Kentaro AKIYAMA, Junichiro FUJIMAGARI, Keita ISHIKAWA, Jun OGI, Yukio TAGAWA, Takuya NAKAMURA, Satoru WAKIYAMA
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Patent number: 8767109Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.Type: GrantFiled: October 18, 2012Date of Patent: July 1, 2014Assignee: Sony CorporationInventors: Shunsuke Maruyama, Junichiro Fujimagari, Toshifumi Wakano, Torii Motonobu, Hoshi Hironori, Kikuchi Koji
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Publication number: 20130038768Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.Type: ApplicationFiled: October 18, 2012Publication date: February 14, 2013Applicant: SONY CORPORATIONInventors: Shunsuke MARUYAMA, Junichiro FUJIMAGARI, Toshifumi WAKANO, Motonobu TORII, Hironori HOSHI, Koji KIKUCHI
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Patent number: 8355069Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.Type: GrantFiled: January 24, 2007Date of Patent: January 15, 2013Assignee: Sony CorporationInventors: Shunsuke Maruyama, Junichiro Fujimagari, Toshifumi Wakano, Motonobu Torii, Hironori Hoshi, Koji Kikuchi