Abstract: A power module is fabricated, employing a clad metal that is formed by pressure-laminating aluminum and copper, in such a manner that the aluminum layer of the clad metal is bonded such as by ultrasonic bonding to the surface electrode of the power semiconductor chip and a wire is bonded to the copper layer thereof to establish electrical circuit. The clad metal is thermally treated in advance at a temperature higher than the operating temperature of the power semiconductor chip to sufficiently form intermetallic compounds at the interface between the aluminum layer and the copper layer for the intermetallic compounds so as not to grow in thickness after the bonding processes.

Abstract: A power semiconductor device includes an insulating substrate, a semiconductor element, a case, and a wiring member. The case forms a container body having a bottom surface defined by a surface of the insulating substrate, to which said semiconductor element is bonded. The wiring member has a bonding portion positioned above an upper surface electrode of the semiconductor element. The bonding portion of the wiring member is provided with a projection portion projecting toward the upper surface electrode of the semiconductor element and bonded to the upper surface electrode with a solder, and a through hole passing through the bonding portion in a thickness direction through the projection portion.

Abstract: A semiconductor device according to the present invention includes an insulating substrate having a circuit pattern, semiconductor elements bonded on the circuit pattern with a brazing material, and a wiring terminal bonded with a brazing material on an electrode provided on each of the semiconductor elements on an opposite side of the circuit pattern, in which a part of the wiring terminal is in contact with the insulating substrate, and insulated from the circuit pattern.

Abstract: Disclosed is a mobile device comprising an acceleration detection unit for detecting acceleration relative to the device; a condition identification unit; and a power supply controller which determines, from a combination of the output of the acceleration detection unit and the output of the condition identification unit, whether or not to begin to supply power to the device.

Abstract: Herein provided are: a ceramic board; a semiconductor element for electric power, on one surface of which an electrode is formed, and the other surface of which is bonded to the ceramic board; a lead terminal, one end side of which is bonded to the electrode, and the other end side of which is to be electrically connected to an outside thereof; and a sealing member by which the semiconductor element for electric power is sealed together with a part, in the lead terminal, bonded to the electrode; wherein, near an end in said one end side of the lead terminal, an inclined surface is formed which becomes farther from the circuit board as it becomes closer to the end.

Abstract: An electrode terminal includes: a first drawn-out part to be bonded to a main electrode; and a second drawn-out part that is formed of a plate member in a continuous fashion from one end portion to be positioned opposite to the main electrode with a gap therebetween until another end portion to be connected to an external circuit, so that a portion in the first drawn-out part that is adjacent to a portion therein to be bonded to the main electrode, is bonded to an opposing surface to the main electrode in said one end portion; wherein the first drawn-out part is formed so that the portion to be bonded to the main electrode is away from the opposing surface; and wherein an opening portion corresponding to the main electrode is formed in the second drawn-out part.

Abstract: A semiconductor device includes a conductive portion having semiconductor elements provided on a substrate, a case housing the conductive portion, and a lead terminal integrated into the case to be directly connected to the semiconductor elements or an interconnection of the substrate. The lead terminal has a stress relief shape for reliving stress generated in the lead terminal.

Abstract: It is possible to provide a semiconductor device which can be obtained at a high reliability by warping an insulating substrate stably into a convex shape while ensuring a close contact between a cooling member and the insulating substrate. The semiconductor device includes an insulating substrate, a semiconductor element disposed on a first surface of the insulating substrate, a case connected to the insulating substrate, and a resin filled inside the case. Assuming that the thickness of the insulating substrate is denoted by t1, the thickness of the resin is denoted by t2, the linear expansion coefficient of the insulating substrate is denoted by ?1, and the linear expansion coefficient of the resin is denoted by ?2, the relationship therebetween satisfies t2?t1 and ?2??1, and a second surface of the insulating substrate opposite to the first surface thereof is warped into a convex shape.

Abstract: An electric power semiconductor device includes a heat transfer plate. A printed wire board is spaced a predetermined gap apart from the heat transfer plate. An opening portion is provided in the vicinity of an electrode strip formed on the outer side of the printed wire board. An electric power semiconductor element is disposed between the heat transfer plate and the printed wire board, and adhered to the heat transfer plate. A wiring member has one end bonded to a first bonding portion of a main power electrode of the electric power semiconductor element, and the other end is bonded to a second bonding portion. At least part of the second bonding portion is included in a space that extends from the main power electrode to the printed wire board, and the first bonding portion is included in a space that extends from the opening portion.

Abstract: A base plate (1) includes a fixed surface and a radiating surface which is a surface opposite to the fixed surface. An insulating substrate (3) is bonded to the fixed surface of the base plate (1). Conductive patterns (4,5) are provided on the insulating substrate (3). Semiconductor chips (7,8) are bonded to the conductive pattern (4). An Al wire (12) connects top surfaces of the semiconductor chip (8) to the conductive pattern (5). The insulating substrate (3), the conductive patterns (4 ,5), the semiconductor chips (7 to 10) and the Al wires (11 to 13) are sealed with resin (16). The base plate (1) includes a metal part (19) and a reinforcing member (20) provided in the metal part (19). A Young's modulus of the reinforcing member (20) is higher than a Youngs modulus of the metal part (19).

Abstract: A semiconductor device includes a semiconductor element having a lower surface bonded to an insulating substrate side, and a plate-shaped lead terminal bonded to an upper surface of the semiconductor element, and having a horizontally extending portion. The horizontally extending portion in the lead terminal is bonded to the semiconductor element and includes a linearly extending portion in a planar view. The semiconductor device further includes a sealing resin that seals the semiconductor element together with the linearly extending portion in the lead terminal. A linear expansion coefficient of the sealing resin shows a value intermediate between a linear expansion coefficient of the lead terminal and a linear expansion coefficient of the semiconductor element, and the lead terminal includes a recess or a projection to horizontally and partially separate the linearly extending portion into parts.

Abstract: A power semiconductor device includes an insulating substrate, a semiconductor element, a case, and a wiring member. The case forms a container body having a bottom surface defined by a surface of the insulating substrate, to which said semiconductor element is bonded. The wiring member has a bonding portion positioned above an upper surface electrode of the semiconductor element. The bonding portion of the wiring member is provided with a projection portion projecting toward the upper surface electrode of the semiconductor element and bonded to the upper surface electrode with a solder, and a through hole passing through the bonding portion in a thickness direction through the projection portion.

Abstract: A semiconductor device according to the present invention includes an insulating substrate having a circuit pattern, semiconductor elements bonded on the circuit pattern with a brazing material, and a wiring terminal bonded with a brazing material on an electrode provided on each of the semiconductor elements on an opposite side of the circuit pattern, in which a part of the wiring terminal is in contact with the insulating substrate, and insulated from the circuit pattern.

Abstract: It is possible to provide a semiconductor device which can be obtained at a high reliability by warping an insulating substrate stably into a convex shape while ensuring a close contact between a cooling member and the insulating substrate. The semiconductor device includes an insulating substrate, a semiconductor element disposed on a first surface of the insulating substrate, a case connected to the insulating substrate, and a resin filled inside the case. Assuming that the thickness of the insulating substrate is denoted by t1, the thickness of the resin is denoted by t2, the linear expansion coefficient of the insulating substrate is denoted by ?1, and the linear expansion coefficient of the resin is denoted by ?2, the relationship therebetween satisfies t2?t1 and ?2??1, and a second surface of the insulating substrate opposite to the first surface thereof is warped into a convex shape.

Abstract: The present invention has a tray corresponding to a heat sink, a circuit part is accommodated in an accommodating part of the tray, and the circuit part is potting-sealed with a sealing resin such that external electrodes are exposed. The sealing resin covers and seals a top part of the tray.

Abstract: The semiconductor device includes; a semiconductor element in which a metallization layer is formed on the backside side; a metallic lead frame that is arranged in parallel, with a distance spaced apart from the semiconductor element; a first bonding layer that is provided between the semiconductor element and the lead frame, and is bonded to the metallization layer; and a second bonding layer that is provided between the semiconductor element and the lead frame, and bonds the first bonding layer to the lead frame. The first bonding layer is expanded at a central portion toward the lead frame.

Abstract: An electric power semiconductor device includes a heat transfer plate. A printed wire board is spaced a predetermined gap apart from the heat transfer plate. An opening portion is provided in the vicinity of an electrode strip formed on the outer side of the printed wire board. An electric power semiconductor element is disposed between the heat transfer plate and the printed wire board, and adhered to the heat transfer plate. A wiring member has one end bonded to a first bonding portion of a main power electrode of the electric power semiconductor element, and the other end is bonded to a second bonding portion. At least part of the second bonding portion is included in a space that extends from the main power electrode to the printed wire board, and the first bonding portion is included in a space that extends from the opening portion.

Abstract: Disclosed is a semiconductor device, comprising a driver that causes first through third infrared LEDs to emit light sequentially at prescribed times; an infrared light sensor that receives infrared light that is emitted by the first through the third infrared LEDs and reflected by a reflecting object, and generates photoelectric currents at levels corresponding to the intensity of the received infrared light; an amplifier that generates first through third infrared light information, on the basis of the photoelectric current that is generated by the infrared light sensor, and which denote the intensity of the infrared light; an A/D converter; and a linear/logarithmic converter apparatus. It is thus possible to sense the movement of the reflecting object on the basis of the first through the third infrared light information.

Abstract: Disclosed is a mobile device comprising an acceleration detection unit for detecting acceleration relative to the device; a condition identification unit; and a power supply controller which determines, from a combination of the output of the acceleration detection unit and the output of the condition identification unit, whether or not to begin to supply power to the device.

Abstract: A semiconductor device includes a conductive portion having semiconductor elements provided on a substrate, a case housing the conductive portion, and a lead terminal integrated into the case to be directly connected to the semiconductor elements or an interconnection of the substrate. The lead terminal has a stress relief shape for reliving stress generated in the lead terminal.