Patents by Inventor Junji Noguchi
Junji Noguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8617981Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: April 12, 2013Date of Patent: December 31, 2013Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Patent number: 8586447Abstract: In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming insulative films and a barrier insulative film for a reservoir pattern, forming an insulative film capable of suppressing or preventing copper from diffusing on the upper surface and on the lateral surface of the interconnection and above the insulative film and the insulative film, forming insulative films of low dielectric constant, in which the insulative film is formed such that the deposition rate above the opposing lateral surfaces of the interconnections is larger than the deposition rate therebelow to form an air gap between the adjacent interconnections and, finally, planarizing the insulative film by interlayer CMP.Type: GrantFiled: July 3, 2012Date of Patent: November 19, 2013Assignee: Hitachi, Ltd.Inventors: Junji Noguchi, Takashi Matsumoto, Takayuki Oshima, Toshihiko Onozuka
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Patent number: 8431480Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: September 23, 2011Date of Patent: April 30, 2013Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwaskai, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Patent number: 8420528Abstract: Wirings mainly containing copper are formed on an insulating film on a substrate. Then, after forming insulating films for reservoir pattern and a barrier insulating film, an insulating film for suppressing or preventing diffusion of copper is formed on upper and side surfaces of the wirings, the insulating film on the substrate, and the barrier insulating film. Here, thickness of the insulating film for suppressing or preventing diffusion of copper at the bottom of a narrow inter-wiring space is made smaller than that on the wirings, thereby efficiently reducing wiring capacitance of narrow-line pitches. Then, first and second low dielectric constant insulating films are formed. Here, a deposition rate of the first insulating film at an upper portion of the side surfaces of facing wirings is made higher than that at a lower portion thereof, thereby forming air gaps. Finally, the second insulating film is planarized by interlayer CMP.Type: GrantFiled: October 24, 2009Date of Patent: April 16, 2013Assignee: Hitachi, Ltd.Inventor: Junji Noguchi
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Patent number: 8384220Abstract: A semiconductor IC device includes a buried interconnection in interconnection layers over a semiconductor substrate, in which electrical connection of interconnections are provided over and under an interconnection layer of an embedded interconnection from among the interconnection layers such that a first connecting conductor portion within a connecting hole extending from an upper interconnection toward the interconnection layer of a predetermined buried interconnection and a second connecting conductor portion within the connecting hole extending from a lower interconnection toward the interconnection layer of the predetermined buried interconnection are electrically connected via a connecting conductor portion for relay in the connecting groove of the interconnection layer of a predetermined buried interconnection.Type: GrantFiled: May 23, 2008Date of Patent: February 26, 2013Assignee: Hitachi, Ltd.Inventors: Tatsuyuki Saito, Junji Noguchi, Hizuru Yamaguchi, Nobuo Owada
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Patent number: 8368151Abstract: When MOS transistors having a plurality of threshold voltages in which a source and a drain form a symmetrical structure are mounted on the same substrate, electrically-symmetrical characteristics is provided with respect to an exchange of the source and the drain in each MOS transistor. A MOS transistor having a large threshold voltage is provided with a halo diffusion region, and halo implantation is not performed on a MOS transistor having a small threshold voltage.Type: GrantFiled: December 22, 2009Date of Patent: February 5, 2013Assignee: Hitachi, Ltd.Inventors: Kenji Miyakoshi, Shinichiro Wada, Junji Noguchi, Koichiro Miyamoto, Masaya Iida, Masafumi Suefuji
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Publication number: 20120270390Abstract: In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming insulative films and a barrier insulative film for a reservoir pattern, forming an insulative film capable of suppressing or preventing copper from diffusing on the upper surface and on the lateral surface of the interconnection and above the insulative film and the insulative film, forming insulative films of low dielectric constant, in which the insulative film is formed such that the deposition rate above the opposing lateral surfaces of the interconnections is larger than the deposition rate therebelow to form an air gap between the adjacent interconnections and, finally, planarizing the insulative film by interlayer CMP.Type: ApplicationFiled: July 3, 2012Publication date: October 25, 2012Applicant: Hitachi, Ltd.Inventors: Junji Noguchi, Takashi Matsumoto, Takayuki Oshima, Toshihiko Onozuka
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Patent number: 8247902Abstract: In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming insulative films and a barrier insulative film for a reservoir pattern, forming an insulative film capable of suppressing or preventing copper from diffusing on the upper surface and on the lateral surface of the interconnection and above the insulative film and the insulative film, forming insulative films of low dielectric constant, in which the insulative film is formed such that the deposition rate above the opposing lateral surfaces of the interconnections is larger than the deposition rate therebelow to form an air gap between the adjacent interconnections and, finally, planarizing the insulative film by interlayer CMP.Type: GrantFiled: February 15, 2011Date of Patent: August 21, 2012Assignee: Hitachi, Ltd.Inventors: Junji Noguchi, Takashi Matsumoto, Takayuki Oshima, Toshihiko Onozuka
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Patent number: 8129275Abstract: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.Type: GrantFiled: February 5, 2010Date of Patent: March 6, 2012Assignee: Renesas Electronics CorporationInventors: Naofumi Ohashi, Junji Noguchi, Toshinori Imai, Hizuru Yamaguchi, Nobuo Owada, Kenji Hinode, Yoshio Homma, Seiichi Kondo
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Patent number: 8122405Abstract: Provided is a method for manufacturing a semiconductor integrated circuit device which enables a timing optimization without giving additions to a manufacturing process and increasing cost and TAT. Existence of a timing constraint violation is determined, and when a timing constraint violation is detected, to dissolve the violation, a void formation inhibition zone is set up in a part or all of a spacing (inter-wiring spacing) between an optimization-target wiring which needs a further delay time of a signal and clock and an adjacent wiring adjacent to the optimization-target wiring having a spacing within a specified wiring spacing, and an insulating film is formed in a spacing (inter-wiring spacing) between the optimization-target wiring and the adjacent wiring in the void formation inhibition zone, and voids are formed in a spacing (inter-wiring spacing) between the optimization-target wiring and the adjacent wiring outside the void formation inhibition zone.Type: GrantFiled: October 17, 2008Date of Patent: February 21, 2012Assignee: Hitachi, Ltd.Inventors: Takashi Matsumoto, Junji Noguchi, Takayuki Oshima
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Publication number: 20120015514Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: ApplicationFiled: September 23, 2011Publication date: January 19, 2012Inventors: JUNJI NOGUCHI, Takayushi Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Patent number: 8053893Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: June 22, 2009Date of Patent: November 8, 2011Assignee: Renesas Electronics CorporationInventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwaskai, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Publication number: 20110140275Abstract: In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming insulative films and a barrier insulative film for a reservoir pattern, forming an insulative film capable of suppressing or preventing copper from diffusing on the upper surface and on the lateral surface of the interconnection and above the insulative film and the insulative film, forming insulative films of low dielectric constant, in which the insulative film is formed such that the deposition rate above the opposing lateral surfaces of the interconnections is larger than the deposition rate therebelow to form an air gap between the adjacent interconnections and, finally, planarizing the insulative film by interlayer CMP.Type: ApplicationFiled: February 15, 2011Publication date: June 16, 2011Inventors: Junji Noguchi, Takashi Matsumoto, Takayuki Oshima, Toshihiko Onozuka
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Patent number: 7911055Abstract: In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming insulative films and a barrier insulative film for a reservoir pattern, forming an insulative film capable of suppressing or preventing copper from diffusing on the upper surface and on the lateral surface of the interconnection and above the insulative film and the insulative film, forming insulative films of low dielectric constant, in which the insulative film is formed such that the deposition rate above the opposing lateral surfaces of the interconnections is larger than the deposition rate therebelow to form an air gap between the adjacent interconnections and, finally, planarizing the insulative film by interlayer CMP.Type: GrantFiled: January 23, 2009Date of Patent: March 22, 2011Assignee: Hitachi, Ltd.Inventors: Junji Noguchi, Takashi Matsumoto, Takayuki Oshima, Toshihiko Onozuka
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Publication number: 20110024838Abstract: There is provided a high withstand voltage LDMOS which is a MOS transistor formed on a semiconductor substrate and isolated by a trench, and a source region of which is sandwiched by a drain region, in which the metal layer gate wire connected to the gate electrode is led out outside the trench so as to pass over a P-type drift layer.Type: ApplicationFiled: July 12, 2010Publication date: February 3, 2011Inventors: Keigo KITAZAWA, Junji Noguchi, Takayuki Oshima, Shinichiro Wada, Tomoyuki Miyoshi, Atsushi Itoh
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Patent number: 7777343Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.Type: GrantFiled: June 9, 2006Date of Patent: August 17, 2010Assignee: Renesas Technology Corp.Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
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Publication number: 20100164015Abstract: When MOS transistors having a plurality of threshold voltages in which a source and a drain form a symmetrical structure are mounted on the same substrate, electrically-symmetrical characteristics is provided with respect to an exchange of the source and the drain in each MOS transistor. A MOS transistor having a large threshold voltage is provided with a halo diffusion region, and halo implantation is not performed on a MOS transistor having a small threshold voltage.Type: ApplicationFiled: December 22, 2009Publication date: July 1, 2010Applicant: HITACHI, LTD.Inventors: Kenji MIYAKOSHI, Shinichiro WADA, Junji NOGUCHI, Koichiro MIYAMOTO, Masaya IIDA, Masafumi SUEFUJI
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Publication number: 20100136786Abstract: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.Type: ApplicationFiled: February 5, 2010Publication date: June 3, 2010Inventors: Naofumi Ohashi, Junji Noguchi, Toshinori Imai, Hizuru Yamaguchi, Nobuo Owada, Kenji Hinode, Yoshio Homma, Seiichi Kondo
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Publication number: 20100130001Abstract: Wirings mainly containing copper are formed on an insulating film on a substrate. Then, after forming insulating films for reservoir pattern and a barrier insulating film, an insulating film for suppressing or preventing diffusion of copper is formed on upper and side surfaces of the wirings, the insulating film on the substrate, and the barrier insulating film. Here, thickness of the insulating film for suppressing or preventing diffusion of copper at the bottom of a narrow inter-wiring space is made smaller than that on the wirings, thereby efficiently reducing wiring capacitance of narrow-line pitches. Then, first and second low dielectric constant insulating films are formed. Here, a deposition rate of the first insulating film at an upper portion of the side surfaces of facing wirings is made higher than that at a lower portion thereof, thereby forming air gaps. Finally, the second insulating film is planarized by interlayer CMP.Type: ApplicationFiled: October 24, 2009Publication date: May 27, 2010Inventor: Junji NOGUCHI
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Patent number: 7659201Abstract: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.Type: GrantFiled: May 27, 2008Date of Patent: February 9, 2010Assignee: Renesas Technology Corp.Inventors: Naofumi Ohashi, Junji Noguchi, Toshinori Imai, Hizuru Yamaguchi, Nobuo Owada, Kenji Hinode, Yoshio Homma, Seiichi Kondo