Abstract: An integrated circuit semiconductor device includes a first region including first active fins extending in a first direction, and first transistors including first gate electrodes extending in a second direction, a second region in contact with the first region in the second direction, wherein the second region includes second active fins extending in the first direction, and second transistors including second gate electrodes extending in the second direction. The integrated circuit semiconductor device includes metal dams at a boundary of the first region and the second region to separate the first gate electrodes and the second gate electrodes in the second direction, wherein the metal dams, the first gate electrodes, and the second gate electrodes are electrically connected in the second direction.

Abstract: A semiconductor device is provided. The semiconductor device includes: first, second and third active patterns on a logic cell region of a substrate and are spaced apart from each other in a first direction; first and second gate electrodes, the first gate electrode crossing the first active pattern and the second gate electrode crossing the second active pattern; a first separation pattern provided between the first and second active patterns; a second separation pattern provided between the second and third active patterns; a first gate insulating layer interposed between the first gate electrode and the first active pattern; and a first gate cutting pattern interposed between the first and second gate electrodes, and in contact with a top surface of the first separation pattern.

Abstract: A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.

Abstract: A semiconductor memory device includes: a substrate having a first channel structure and a second channel structure respectively extending in a first direction and arranged in a second direction perpendicular to the first direction; a first gate structure disposed on the first channel structure and extending in the second direction on the substrate; a second gate structure disposed on the second channel structure and extending in the second direction; first source/drain regions respectively disposed on opposite sides of the first gate structure; second source/drain regions respectively disposed on opposite sides of the second gate structure; a gate separation pattern disposed between the first and second gate structures and having an upper surface at a level lower than that of an upper surface of each of the first and second gate structures, the gate separation pattern including a first insulating material; and a gate capping layer disposed on the first and second gate structures and having an extension porti

Abstract: A compound for an organic optoelectronic device, a composition for an organic optoelectronic device including the same, an organic optoelectronic device, and a display device, the compound being represented by Chemical Formula 1:

Abstract: An electronic apparatus, including a processor connected with a microphone, a memory and a communication interface, and configured to: based on receiving a user voice through the microphone, acquire an operation result by inputting the user voice into the first neural network model, and identify at least one device corresponding to the user voice by inputting the operation result into the second neural network model, and control the communication interface to transmit the operation result to the at least one device, wherein the first neural network model is configured to, after only some layers of a third neural network model trained to identify a text from a voice are additionally trained, include only the additionally trained some layers, and wherein the second neural network model is trained to identify a device corresponding to a voice.

Abstract: A composition for an organic optoelectronic device, an organic optoelectronic device including the same, and a display device, the composition including a first compound represented by Chemical Formula 1, and a second compound represented by a combination of Chemical Formula 2 and Chemical Formula 3:

Abstract: A composition for an organic optoelectronic device, an organic optoelectronic device, and a display device, the composition including a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2,

Abstract: A semiconductor memory device includes a substrate having a first region and a second region. A first gate electrode layer is on the first region and includes a first conductive layer including a first plurality of layers, and includes a first upper conductive layer on the first conductive layer. A second gate electrode layer is on the second region and includes a second conductive layer including a second plurality of layers, and includes a second upper conductive layer on the second conductive layer. At least one of the first plurality of layers includes titanium oxynitride (TiON). A first transistor including the first gate electrode layer and a second transistor including the second gate electrode layer are metal oxide semiconductor field effect transistors (MOSFETs) having the same channel conductivity type, and a threshold voltage of the first transistor is smaller than a threshold voltage of the second transistor.

Abstract: Provided is an operation method of a processor including a plurality of heterogeneous cores, the operation method including selecting an execution core of the plurality of heterogeneous cores for executing an application, loading, from a memory, first data corresponding to core information of the execution core during runtime of the execution core, wherein the first data is included in compile data, the compile data including a first function compiled for each heterogeneous core of the plurality of heterogeneous cores, the first function being a function from among a plurality of functions of the application that is at least one of frequently called or having a long execution time, and processing, by the execution core, execution codes for executing the application, based on the first data.

Abstract: A composition for an organic photoelectronic device, an organic photoelectronic device, and a display device, the composition comprising a first compound represented by Chemical Formula 1, and a second compound represented by Chemical Formula 2:

Abstract: A vehicle headlight includes a headlight housing including an external lens and an outer wall that define a headlight interior and a lighting element including a light-emitting diode lamp and an internal heatsink coupled to at least a portion of the lamp. The lamp is in thermal communication with the internal heatsink. The lighting element is disposed within the headlight interior and coupled to an element receptacle defined by the outer wall. The internal heatsink of the lighting element is in thermal communication with the external lens.

Abstract: A vehicular LED assembly is provided that includes a plurality of vehicular LED modules, each comprising: a lens with a canted input surface and an exit surface; a bezel surrounding the lens; and an LED light source positioned to direct incident light through the input surface. The input surface comprises a plurality of near-field lens elements for shaping the incident light into a collimated light pattern emanating from the exit surface. Further, the plurality of optical elements may be configured in a step-wise pattern defined by a sweep angle.