Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: Provided is a solid-state imaging device capable of suitably forming a pixel separation section in a pixel separation groove, and a method for manufacturing the solid-state imaging device. A solid-state imaging device of the present disclosure includes a first substrate, a plurality of photoelectric conversion sections provided in the first substrate, and a pixel separation section provided between the photoelectric conversion sections in the first substrate and provided on a side surface of the first substrate that is a {100} plane.

Abstract: A motor drive apparatus includes a motor, a power converter, and a controller that controls the voltage supplied to the motor by the power converter. The power converter converts a voltage of a 400 V-class AC power supply to a voltage with an effective value lower than an effective value of the 400 V-class AC power supply. The power converter converts the voltage by a switching operation of a plurality of switching elements. The motor is configured so that a value of ?×Vx/Ld is greater than Pmax when an effective value voltage Vx=200 V. A d-axis inductance of the motor is Ld. A flux linkage of the motor is ?. A maximum output of the motor in a device where the motor is mounted is Pmax. The controller has a control mode in which an effective value voltage higher than Vx is applied to the motor.

Abstract: A base station, that is a first base station performing dual connectivity together with a second base station, includes: a control unit configured to determine a candidate list of band combinations used for the dual connectivity, the candidate list being determined based on a capability related to the first base station; a transmission unit configured to transmit the candidate list to the second base station; and a reception unit configured to receive, from the second base station, information indicating a preferable band combination selected from the candidate list by the second base station.

Abstract: An imaging device includes a plurality of imaging elements, wherein each of the plurality of imaging elements includes: a plurality of pixels containing impurities of a first conductivity type; an element separation wall surrounding the plurality of pixels and provided so as to penetrate a semiconductor substrate; an on-chip lens provided above a light receiving surface of the semiconductor substrate so as to be shared by the plurality of pixels; and a first separation portion provided in a region surrounded by the element separation wall and separating the plurality of pixels, the first separation portion is provided so as to extend in a thickness direction of the semiconductor substrate, and a first diffusion region containing impurities of a second conductivity type opposite to the first conductivity type is provided in a region positioned around the first separation portion and extending in the thickness direction of the semiconductor substrate.

Abstract: A decrease in an insulation resistance between a separation region at a boundary between pixels and a wiring layer is prevented. A light receiving element includes the pixels, the separation region, the wiring layer, and a wiring layer protective film. The pixels included in the light receiving element have photoelectric conversion units, each photoelectric conversion unit being disposed in a semiconductor substrate to perform photoelectric conversion of incident light. The separation region included in the light receiving element is disposed at a boundary between the photoelectric conversion units and separates the photoelectric conversion units from each other. The wiring layer included in the light receiving element is wired to the pixels. The wiring layer protective film included in the light receiving element is disposed between the separation region and the wiring layer to protect the wiring layer.

Abstract: The present technology relates to an imaging element, a manufacturing method, and an electronic apparatus capable of forming a photoelectric conversion part in a steep impurity profile. Laminated first and second photoelectric conversion parts are provided between a first surface of a semiconductor substrate and a second surface opposite to the first surface, an impurity profile of the first photoelectric conversion part is a profile having a peak on the first surface side, and an impurity profile of the second photoelectric conversion part is a profile having a peak on the second surface side. A side on which an impurity concentration of the first photoelectric conversion part is low and a side on which an impurity concentration of the second photoelectric conversion part is low face each other. The present technology can be applied to, for example, an imaging element in which a plurality of photoelectric conversion parts are laminated in a semiconductor substrate.

Abstract: To reduce a dark current of an image sensor including a photoelectric conversion unit disposed on a back surface of a semiconductor substrate. The image sensor includes a photoelectric conversion unit, a through-electrode, a charge holding unit, a back-side high impurity concentration region, and a front-side high impurity concentration region. The photoelectric conversion unit is disposed on a back surface of a semiconductor substrate and performs photoelectric conversion of incident light. The through-electrode is formed in a shape penetrating from the back surface to a front surface of the semiconductor substrate and transmits a charge generated by the photoelectric conversion. The charge holding unit is disposed on the front surface of the semiconductor substrate and holds the transmitted charge.

Abstract: There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.

Abstract: A refrigeration apparatus includes a refrigerant circuit having a heat exchanger, a housing that houses at least the heat exchanger and is provided with a suction port on an upstream side of the heat exchanger, and a filter attached to the suction port of the housing. The filter is configured to be held not to come into contact with the heat exchanger. When air containing oil mist flows to the heat exchanger via the filter, at least a part of an oil component in the air containing oil mist is trapped by the filter.

Abstract: There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.

Abstract: A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: A motor drive apparatus includes a motor, a power converter, and a controller that controls the voltage supplied to the motor by the power converter. The power converter converts a voltage of a 400 V-class AC power supply to a voltage with an effective value lower than an effective value of the 400 V-class AC power supply. The power converter converts the voltage by a switching operation of a plurality of switching elements. The motor is configured so that a value of ?×Vx/Ld is greater than Pmax when an effective value voltage Vx=200 V. A d-axis inductance of the motor is Ld. A flux linkage of the motor is ?. A maximum output of the motor in a device where the motor is mounted is Pmax. The controller has a control mode in which an effective value voltage higher than Vx is applied to the motor.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate; a first photoelectric converter; a through electrode; a first dielectric film; and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter. The through electrode penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate. The first dielectric film has first film thickness. The second dielectric film is provided on a side surface of the through hole. The second dielectric film has second film thickness.

Abstract: A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.