Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: The present disclosure relates to a solid state image sensor, a fabrication method, and an electronic apparatus, which enable to efficiently provide trench structures, which surrounds respective pixel sections of the solid state image sensor, and through-electrodes side by side. A solid state image sensor according to a first aspect of the present disclosure includes photoelectric conversion sections formed in respective pixel sections of a semiconductor substrate, trench structures defined by walls of insulating films formed in a depth direction of the semiconductor substrate and surrounding the respective pixel sections, and through-electrodes formed through the semiconductor substrate at positions overlapping the respective trench structures. The present disclosure can be applied, for example, to back-side illumination CMOS image sensors.

Abstract: Provided is a current detection device in which, to a bus bar type shunt resistor, another member can be easily connected and fixed by means of rotational fastening of screw members. The current detection device is provided with: a pair of wiring members (11, 12) consisting of electrically conductive metal material; a resistor body (13) consisting of metal material having a smaller temperature coefficient of resistance than the wiring members and which is bonded to the wiring members; and a screw member (16) which is fixed to at least one of the wiring members and which is a separate member from the wiring members. One screw member (16) is fixed to one surface of the wiring members (11, 12), and another screw member (17) is rotationally fastened to the one screw member (16) sandwiching another member (18, 19) disposed on the other surface of the wiring members (11,12).

Abstract: There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode (105) and a cathode (101). The cathode is in a well region (103) of the first substrate. The first pixel includes an isolation region (108) that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region (107a) between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.

Abstract: The present disclosure relates to a solid state image sensor, a fabrication method, and an electronic apparatus, which enable to efficiently provide trench structures, which surrounds respective pixel sections of the solid state image sensor, and through-electrodes side by side. A solid state image sensor according to a first aspect of the present disclosure includes photoelectric conversion sections formed in respective pixel sections of a semiconductor substrate, trench structures defined by walls of insulating films formed in a depth direction of the semiconductor substrate and surrounding the respective pixel sections, and through-electrodes formed through the semiconductor substrate at positions overlapping the respective trench structures. The present disclosure can be applied, for example, to back-side illumination CMOS image sensors.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode (105) and a cathode (101). The cathode is in a well region (103) of the first substrate. The first pixel includes an isolation region (108) that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region (107a) between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.

Abstract: Provided is a current detection device in which, to a bus bar type shunt resistor, another member can be easily connected and fixed by means of rotational fastening of screw members. The current detection device is provided with: a pair of wiring members (11, 12) consisting of electrically conductive metal material; a resistor body (13) consisting of metal material having a smaller temperature coefficient of resistance than the wiring members and which is bonded to the wiring members; and a screw member (16) which is fixed to at least one of the wiring members and which is a separate member from the wiring members. One screw member (16) is fixed to one surface of the wiring members (11, 12), and another screw member (17) is rotationally fastened to the one screw member (16) sandwiching another member (18, 19) disposed on the other surface of the wiring members (11,12).

Abstract: A control system for an internal combustion engine having a throttle valve disposed in an intake passage of the engine is provided. A wide-open intake air amount, which is an intake air amount corresponding to a state where the throttle valve is fully opened, is calculated according to the engine rotational speed, and a theoretical intake air amount, which is an intake air amount corresponding to a state where no exhaust gas of the engine is recirculated to a combustion chamber of the engine, is calculated according to the wide-open intake air amount and the intake pressure. An intake air amount of the engine is detected or estimated, and an amount of the evaporative fuel/air mixture supplied through the evaporative fuel passage to the intake passage is calculated. An intake gas amount is calculated by correcting the intake air amount using the evaporative fuel/air mixture amount, and an exhaust gas recirculation ratio is calculated using the theoretical intake air amount and the intake gas amount.

Abstract: A control system for an internal combustion engine having a throttle valve disposed in an intake passage of the engine is provided. A wide-open intake air amount, which is an intake air amount corresponding to a state where the throttle valve is fully opened, is calculated according to the engine rotational speed, and a theoretical intake air amount, which is an intake air amount corresponding to a state where no exhaust gas of the engine is recirculated to a combustion chamber of the engine, is calculated according to the wide-open intake air amount and the intake pressure. An intake air amount of the engine is detected or estimated, and an amount of the evaporative fuel/air mixture supplied through the evaporative fuel passage to the intake passage is calculated. An intake gas amount is calculated by correcting the intake air amount using the evaporative fuel/air mixture amount, and an exhaust gas recirculation ratio is calculated using the theoretical intake air amount and the intake gas amount.

Abstract: A control system for an internal combustion engine having a throttle valve disposed in an intake passage of the engine is provided. A wide-open intake air amount, which is an intake air amount corresponding to a state where the throttle valve is fully opened, is calculated according to the engine rotational speed, and a theoretical intake air amount, which is an intake air amount corresponding to a state where no exhaust gas of the engine is recirculated to a combustion chamber of the engine, is calculated according to the wide-open intake air amount and the intake pressure. An actual intake air amount of the engine is detected or estimated, and an exhaust gas recirculation ratio is calculated using the theoretical intake air amount and the actual intake air amount. The engine is controlled using the calculated exhaust gas recirculation ratio.

Abstract: A method for manufacturing a semiconductor device includes the steps of: forming an etching layer (17) formed of silicon on a semiconductor substrate (10); forming a mask layer (20) with a pattern on the etching layer (17), which includes an intermediate layer (22) as a silicon oxide film and a top layer (24) as a polysilicon; and etching the etching layer (17) using the mask layer (20) as a mask, and eliminating the top layer (24).

Abstract: A method for manufacturing a semiconductor device includes the steps of: forming an etching layer (17) formed of silicon on a semiconductor substrate (10); forming a mask layer (20) with a pattern on the etching layer (17), which includes an intermediate layer (22) as a silicon oxide film and a top layer (24) as a polysilicon; and etching the etching layer (17) using the mask layer (20) as a mask, and eliminating the top layer (24).