Patents by Inventor JUNPENG SHI

JUNPENG SHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210050473
    Abstract: An LED packaging device includes a frame including a bottom wall having a bottom surface and a surrounding wall extending upwardly from the bottom wall, at least one LED chip, a plurality of spaced-apart reflectors and a packaging body. The bottom and surrounding walls cooperatively define a mounting space. The surrounding wall has an internal side surface facing the mounting space and a top surface facing away from the bottom surface. The LED chip is disposed on the bottom surface and is received in the mounting space. Each of the reflectors is disposed on a peripheral region of the bottom surface. The packaging body covers the LED chip and the reflectors, such that the LED chip is sealed inside the mounting space.
    Type: Application
    Filed: November 2, 2020
    Publication date: February 18, 2021
    Inventors: JUNPENG SHI, JUWEI LEE, CHEN-KE HSU
  • Publication number: 20210005791
    Abstract: A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.
    Type: Application
    Filed: September 18, 2020
    Publication date: January 7, 2021
    Inventors: JUNPENG SHI, ZHEN-DUAN LIN, CHEN-KE HSU, PING ZHANG
  • Publication number: 20200398245
    Abstract: Described are a low temperature plasma reaction device and a hydrogen sulfide decomposition method. The reaction device includes: a first cavity; a second cavity, the second cavity being embedded inside or outside the first cavity; an inner electrode, the inner electrode being arranged in the first cavity; an outer electrode; and a barrier dielectric arranged between the outer electrode and the inner electrode. The hydrogen sulfide decomposition method includes: implementing dielectric barrier discharge at the outer electrode and the inner electrode of the low temperature plasma reaction device, introducing a raw material gas containing hydrogen sulfide into the first cavity to implement a hydrogen sulfide decomposition method, and continuously introducing a thermally conductive medium into the second cavity in order to control the temperature of the first cavity of the low temperature plasma reaction device.
    Type: Application
    Filed: January 31, 2019
    Publication date: December 24, 2020
    Applicants: CHINA PETROLEUM & CHEMICAL CORPORATION, CHINA PETROLEUM & CHEMICAL CORPORATION QINGDAO RESEARCH INSTITUTE OF SAFEY ENGENEERING
    Inventors: Jing ZHANG, Shanjun MU, Wei XU, Ning SHI, Shucai ZHANG, Guosheng DONG, Tie ZHANG, Lin WANG, Junpeng REN, Feng SUN
  • Publication number: 20200303358
    Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.
    Type: Application
    Filed: June 11, 2020
    Publication date: September 24, 2020
    Inventors: Ping ZHANG, Junpeng SHI, Senpeng HUANG, Zhen-Duan LIN, Shunyi CHEN, Chen-ke HSU
  • Publication number: 20200286772
    Abstract: A wafer holder and a wafer transfer apparatus, system and method are disclosed. The wafer holder is mounted onto the wafer transfer apparatus and includes a holder body and a sucker. The holder body defines a first opening, while the sucker includes a first skirt. The first skirt is located on one side of the holder body and connected to the first opening. A groove is formed at a joint between the first skirt and the first opening. The groove is located at an outer side of the first skirt, and is able to relief stresses produced at a base portion of the sucker during deformation of the first skirt.
    Type: Application
    Filed: March 29, 2018
    Publication date: September 10, 2020
    Inventors: Gang WANG, Rongjun ZHANG, Xiaoyu JIANG, Yichao SHI, Kai LIU, Junpeng CHEN
  • Publication number: 20200279838
    Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.
    Type: Application
    Filed: May 19, 2020
    Publication date: September 3, 2020
    Inventors: Shunyi CHEN, Junpeng SHI, Weng-Tack WONG, Chen-ke HSU, Chih-Wei CHAO
  • Publication number: 20200227890
    Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.
    Type: Application
    Filed: March 26, 2020
    Publication date: July 16, 2020
    Inventors: Hui CHEN, Junpeng SHI, Xinglong LI, CHI-WEI LIAO, Weng-Tack WONG, CHIH-WEI CHAO, Chen-ke HSU
  • Publication number: 20200227395
    Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.
    Type: Application
    Filed: January 14, 2020
    Publication date: July 16, 2020
    Inventors: Junpeng SHI, Chen-Ke HSU, Chang-Chin YU, Yanqiu LIAO, Zhenduan LIN, Zhaowu HUANG, Senpeng HUANG
  • Publication number: 20200203582
    Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(W)/S(?max), ?0.
    Type: Application
    Filed: March 5, 2020
    Publication date: June 25, 2020
    Inventors: Senpeng HUANG, Junpeng SHI, Weng-Tack WONG, Shunyi CHEN, Zhenduan LIN, Chih-wei CHAO, Chen-ke HSU
  • Patent number: 10658550
    Abstract: A light-emitting diode (LED) package structure includes: a support; an LED chip; and a package cover, wherein: a support circuit is formed over the support; the LED chip is arranged over the support and electrically coupled to the support circuit; a lower surface periphery of the package cover is provided with a groove structure filled with organic binder; and the package cover is arranged over the LED chip and connected to the support via the organic binder.
    Type: Grant
    Filed: November 10, 2018
    Date of Patent: May 19, 2020
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Junpeng Shi, Qiuxia Lin, Zhenduan Lin, Chen-Ke Hsu, Chih-Wei Chao
  • Patent number: 10643879
    Abstract: A transfer head for transferring micro element includes a cavity; a plurality of vacuum paths connected with the cavity respectively with valves configured at the connection between the cavity and the vacuum paths and used for opening/closing; a plurality of suction nozzles connected with the vacuum paths, wherein the suction nozzles hold or release the micro element via vacuum pressure; vacuum pressure is transmitted by each vacuum path; a switching component for controlling valve to open/close each vacuum path, so as to control the suction nozzles to hold or release required micro element via vacuum pressure. Further, the switching component includes a CMOS memory circuit and an address electrode array connected to the CMOS memory circuit to realize micro-switch array. The transfer head can selectively transfer a plurality of micro elements at one time.
    Type: Grant
    Filed: January 1, 2018
    Date of Patent: May 5, 2020
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chen-ke Hsu, Xiaojuan Shao, Jiansen Zheng, Junpeng Shi, Kechuang Lin
  • Publication number: 20190319169
    Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.
    Type: Application
    Filed: June 26, 2019
    Publication date: October 17, 2019
    Inventors: Senpeng HUANG, Zhen-duan LIN, Weng-Tack WONG, Junpeng SHI, Shunyi CHEN, Chih-Wei CHAO, Chen-ke HSU
  • Patent number: 10367126
    Abstract: A light-emitting device includes a base having an insulating part and a metal block; a light-emitting diode (LED) chip over the base; a water soluble paste between the LED chip and the base metal block for chip fixing and heat conduction; packaging glue covering the LED chip; and the LED chip bottom, water soluble paste and the base metal block form an all-metal thermal conducting path to achieve low a thermal resistance.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: July 30, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Junpeng Shi, Pei-Song Cai, Hao Huang, Zhenduan Lin, Chih-Wei Chao, Chen-Ke Hsu
  • Publication number: 20190081216
    Abstract: A light-emitting diode (LED) package structure includes: a support; an LED chip; and a package cover, wherein: a support circuit is formed over the support; the LED chip is arranged over the support and electrically coupled to the support circuit; a lower surface periphery of the package cover is provided with a groove structure filled with organic binder; and the package cover is arranged over the LED chip and connected to the support via the organic binder.
    Type: Application
    Filed: November 10, 2018
    Publication date: March 14, 2019
    Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Junpeng SHI, Qiuxia LIN, Zhenduan LIN, Chen-Ke HSU, Chih-Wei CHAO
  • Patent number: 10186495
    Abstract: A film for semiconductor device includes a base material and an adhesive layer formed over the base material. The film is divided into an adhesive area and an expansion area. The elasticity modulus of the expansion area is less than that of the adhesive area. When tensile strength is applied on the film, the expansion area is more prone to tensile deformation than the adhesive area. When this film is used for film expansion of semiconductor devices, the devices can be evenly and orderly arranged on the film.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: January 22, 2019
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Chen-ke Hsu, Junpeng Shi, Xiaojuan Shao, Kechuang Lin
  • Publication number: 20180138142
    Abstract: A film for semiconductor device includes a base material and an adhesive layer formed over the base material. The film is divided into an adhesive area and an expansion area. The elasticity modulus of the expansion area is less than that of the adhesive area. When tensile strength is applied on the film, the expansion area is more prone to tensile deformation than the adhesive area. When this film is used for film expansion of semiconductor devices, the devices can be evenly and orderly arranged on the film.
    Type: Application
    Filed: January 15, 2018
    Publication date: May 17, 2018
    Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Chen-ke HSU, Junpeng SHI, Xiaojuan SHAO, Kechuang LIN
  • Patent number: 9966514
    Abstract: A light emitting diode package structure allows for an improved light-emitting efficiency by including a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip chip except the electrodes; and a second reflecting material layer surrounding the first transparent material layer. An interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip. A wavelength conversion material layer is over the first reflecting material layer, the flip chip, and the second reflecting material layer.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: May 8, 2018
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chen-Ke Hsu, Junpeng Shi, Pei-Song Cai, Zhenduan Lin, Hao Huang, Chenjie Liao, Chih-Wei Chao, Qiuxia Lin
  • Publication number: 20180122683
    Abstract: A transfer head for transferring micro element includes a cavity; a plurality of vacuum paths connected with the cavity respectively with valves configured at the connection between the cavity and the vacuum paths and used for opening/closing; a plurality of suction nozzles connected with the vacuum paths, wherein the suction nozzles hold or release the micro element via vacuum pressure; vacuum pressure is transmitted by each vacuum path; a switching component for controlling valve to open/close each vacuum path, so as to control the suction nozzles to hold or release required micro element via vacuum pressure. Further, the switching component includes a CMOS memory circuit and an address electrode array connected to the CMOS memory circuit to realize micro-switch array. The transfer head can selectively transfer a plurality of micro elements at one time.
    Type: Application
    Filed: January 1, 2018
    Publication date: May 3, 2018
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chen-ke HSU, Xiaojuan SHAO, Jiansen ZHENG, Junpeng SHI, Kechuang LIN
  • Publication number: 20170005245
    Abstract: A light emitting diode package structure includes: a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip chip except the electrodes; a second reflecting material layer surrounding the first transparent material layer, the interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip; and a wavelength conversion material layer covered over the above structure.
    Type: Application
    Filed: June 24, 2016
    Publication date: January 5, 2017
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: CHEN-KE HSU, JUNPENG SHI, PEI-SONG CAI, ZHENDUAN LIN, HAO HUANG, CHENJIE LIAO, CHIH-WEI CHAO, QIUXIA LIN
  • Patent number: D768095
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: October 4, 2016
    Assignee: XIAMENG SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Junpeng Shi, Pei-Song Cai, Zhenduan Lin, Hao Huang