Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(W)/S(?max), ?0.

Abstract: A light emitting diode (LED) package includes a substrate, a metal stage, at least one LED chip and a packaging material. The substrate has an super surface, and a lower surface opposite to the upper surface. The metal stage is formed on the upper surface of the substrate, and has a lumpy structure. The LED chip is mounted on the metal stage. The packaging material covers the LED chip, the metal stage and the substrate. The packaging material and the lumpy structure of the metal stage are engaged with each other.

Abstract: A light-emitting device includes a lead frame, a light-emitting diode (LED) chip, and an encapsulant. The LED chip is disposed on the lead frame, and includes a substrate, a semiconductor light-emitting unit disposed on a surface of the substrate, and a first electrode and a second electrode, which are disposed on the surface of the substrate, and which are located outwardly of the semiconductor light-emitting unit. The first and second electrodes are electrically connected to a lower surface of the semiconductor light-emitting unit, and are respectively connected to a first wiring bonding region and a second wiring bonding region on the lead frame. The encapsulant encapsulates the LED chip on the lead frame.

Abstract: A light-emitting packaging device includes a substrate, a light-emitting diode (LED) chip, an optical element, and a covering member. The LED chip is disposed on the substrate. The optical element is spacedly disposed on the LED chip opposite to the substrate, and has an upper surface and a lower surface that are respectively distal from and proximal to the LED chip. The covering member is made from a fluorine-containing resin, and is configured to cover the LED chip and at least a portion of the upper surface of the optical element.

Abstract: A UV LED device includes a base, a lens disposed on the base, an adhesive unit, an LED chip unit, and an encapsulating member. The adhesive unit has multiple layers and is connected between the base and the lens such that the base, the lens and the adhesive unit cooperatively define an enclosed space. The LED chip unit is disposed in the enclosed space. The encapsulating member is disposed in the enclosed space, and encapsulates the LED chip unit. The encapsulating member is made of a material the same as a material of at least one layer of the adhesive unit.

Abstract: A packaged ultraviolet light-emitting device includes a support member, at least one ultraviolet light-emitting chip, and an encapsulating cover. The support member has opposite top and bottom surfaces, a side surface interconnecting the top and bottom surfaces, and at least one indentation. The ultraviolet light-emitting chip is disposed on the top surface of the support member. The encapsulating cover is made from a fluorine-containing resin, and is disposed over and in contact with the ultraviolet light-emitting chip and the top surface and the indentation of the support member. The encapsulating cover extends into the indentation. A production method of the packaged ultraviolet light-emitting device is also disclosed.

Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.

Abstract: A laser diode packaging structure includes a lead frame and a laser chip. The lead frame includes a frame body that has a front side and a back side opposite to the front side, a front circuit layer and a back circuit layer that are respectively disposed on the front and back sides, and an inner circuit layer that is disposed inside the frame body. The inner circuit layer includes first and second circuit connecting units, each of which has at least one first conductive via to electrically connect to the front circuit layer, and at least one second conductive via to electrically connect to the back circuit layer. The laser chip is mounted on and electrically connected to the front circuit layer, and is configured to emit a laser beam.

Abstract: A UV LED device includes a base, a lens disposed on the base, an adhesive unit, an LED chip unit, and an encapsulating member. The adhesive unit has multiple layers and is connected between the base and the lens such that the base, the lens and the adhesive unit cooperatively define an enclosed space The LED chip unit is disposed in the enclosed space. The encapsulating member is disposed in the enclosed space, and encapsulates the LED chip unit. The encapsulating member is made of a material the same as a material of at least one layer of the adhesive unit.

Abstract: An LED packaging device includes a frame including a bottom wall having a bottom surface and a surrounding wall extending upwardly from the bottom wall, at least one LED chip, a plurality of spaced-apart reflectors and a packaging body. The bottom and surrounding walls cooperatively define a mounting space. The surrounding wall has an internal side surface facing the mounting space and a top surface facing away from the bottom surface. The LED chip is disposed on the bottom surface and is received in the mounting space. Each of the reflectors is disposed on a peripheral region of the bottom surface. The packaging body covers the LED chip and the reflectors, such that the LED chip is sealed inside the mounting space.

Abstract: A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.

Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.

Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.

Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.

Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(W)/S(?max), ?0.

Abstract: A light-emitting diode (LED) package structure includes: a support; an LED chip; and a package cover, wherein: a support circuit is formed over the support; the LED chip is arranged over the support and electrically coupled to the support circuit; a lower surface periphery of the package cover is provided with a groove structure filled with organic binder; and the package cover is arranged over the LED chip and connected to the support via the organic binder.

Abstract: A transfer head for transferring micro element includes a cavity; a plurality of vacuum paths connected with the cavity respectively with valves configured at the connection between the cavity and the vacuum paths and used for opening/closing; a plurality of suction nozzles connected with the vacuum paths, wherein the suction nozzles hold or release the micro element via vacuum pressure; vacuum pressure is transmitted by each vacuum path; a switching component for controlling valve to open/close each vacuum path, so as to control the suction nozzles to hold or release required micro element via vacuum pressure. Further, the switching component includes a CMOS memory circuit and an address electrode array connected to the CMOS memory circuit to realize micro-switch array. The transfer head can selectively transfer a plurality of micro elements at one time.

Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.