Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Target assemblies for PVD chambers are provided herein. In some embodiments, a target assembly for a PVD chamber includes: a backing plate; and a target coupled to the backing plate and having a substrate facing surface opposite the backing plate, wherein a peripheral portion of the target includes an angled surface extending radially outward and toward the backing plate, wherein an annular portion of the angled surface has a surface roughness greater than a surface roughness of a remainder of the substrate facing surface of the target.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.

Abstract: Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

Abstract: Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.

Abstract: Methods and apparatus for physical vapor deposition are provided. The apparatus, for example, includes A PVD apparatus that includes a chamber including a chamber wall; a magnetron including a plurality of magnets configured to produce a magnetic field within the chamber; a pedestal configured to support a substrate; and a target assembly comprising a target made of gold and supported on the chamber wall via a backing plate coupled to a back surface of the target so that a front surface of the target faces the substrate, wherein a distance between a back surface formed in a recess of the backing plate and a bottom surface of the plurality of magnets is about 3.95 mm to about 4.45 mm, and wherein a distance between the front surface of the target and a front surface of the substrate is about 60.25 mm to about 60.75 mm.

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a tubular body having a central opening configured to surround a substrate support, wherein sidewalls of the tubular body do not include any through holes; and a top plate coupled to an upper end of the tubular body and substantially covering the central opening, wherein the top plate has a gas inlet and has a diameter that is greater than an outer diameter of the tubular body, and wherein the tubular body extends straight down from the top plate.