Abstract: A display device includes a display panel including a plurality of pixels, a timing controller which receives an image signal and a control signal and outputs transmission data, and a plurality of source driving circuits, each providing a data signal to a corresponding pixel among the plurality of pixels in response to the transmission data. Each of the source driving circuits applies a state information signal corresponding to an operation state to the timing controller, and the timing controller determines the operation state of the source driving circuits based on the state information signal, compresses the image signal when a source driving circuit of the source driving circuits is in an abnormal state to generate the transmission data, and applies the transmission data to a source driving circuit of the source driving circuits in a normal state.

Abstract: Provided is a Chemical vapor deposition (CVD) equipment including a chamber having an inner space, a plurality of silicon wafers disposed in the inner space of the chamber in an upright position; and a plurality of shower nozzles configured to inject a mixed gas composed of a silicon deposition gas and an impurity gas toward each side edge of the plurality of wafers. The plurality of shower nozzles can be disposed at both sides of the plurality of the plurality of silicon wafers.

Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

Abstract: A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

Abstract: A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

Abstract: A display device includes a display panel including a plurality of pixels, a timing controller that generates a first reference clock signal having a first pulse and a second reference clock signal having a second pulse, a signal generator that generates a vertical start signal of which an activation period starts in response to the first pulse and the second pulse and generates a gate clock signal and an inverted gate clock signal based on the first pulse and the second pulse, and a gate driver that generates a gate signal based on the vertical start signal, the gate clock signal, and the inverted gate clock signal and provides the gate signal to the pixels.

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

Abstract: A display device includes a display panel having a display region and a pad region on a side of the display region, a first printed circuit board spaced apart from the pad region and includes a first driving controller configured to generate a plurality of signals, a second printed circuit board adjacent to the first printed circuit board, a first driving film connected to the first printed circuit board, a second driving film connected to the second printed circuit board, a first signal transmission film connected to the first printed circuit board and including first signal transmission wirings, and a second signal transmission film connected to the second printed circuit board and the first signal transmission film and including second signal transmission wirings.

Abstract: A display device may include a display panel having a display area and a non-display area located in a first direction from the display area, a printed circuit board located in the first direction from the non-display area and configured to generate a signal, a driving film connected to the non-display area of the display panel and configured to drive the display panel in response to the signal, and a connecting film having a first end connected to the non-display area of the display panel and a second end connected to the printed circuit board. The connecting film electrically connects the printed circuit board and the driving film.

Abstract: A driving device of a display panel includes a timing controller which converts a first image data to a second image data, and generates control signals that control a driving timing of the second image data, a gamma data provider which determines a driving frequency of the second image data based on the number of a counting signal output during an active period and a blank period of a vertical synchronized signal, and outputs one of gamma data sets based on the driving frequency, a data driver which generates a data signal corresponding to the second image data based on the one of the gamma data set, and provides the data signal to a data line of a display panel based on the control signals, and a gate driver which provides the gate signal to a gate line of the display panel based on the control signals.

Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

Abstract: A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

Abstract: A method for manufacturing a solar cell includes forming a passivation layer on a rear surface of a substrate of a first conductivity type; forming connecting electrodes having a plurality of electrical contacts that are in contact with the rear surface of the substrate by using a first paste for a first temperature firing on portions of the passivation layer; and forming a rear electrode layer by using a second paste for a second temperature firing on the passivation layer and the plurality of electrical contacts, wherein a temperature of the second temperature firing is lower than a temperature of the first temperature firing.

Abstract: Disclosed is a solar cell including: a semiconductor substrate; a first conductive region formed at a first surface of the semiconductor substrate and having a first conductivity type; a second conductive region formed on a second surface of the semiconductor substrate opposite to the first surface, and having a second conductivity type opposite to the first conductivity type, wherein the second conductive region including a semiconductor layer different and separated from the semiconductor substrate; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The second surface of the semiconductor substrate has a rounded uneven member having a rounded end portion.

Abstract: A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

Abstract: A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

Abstract: A solar cell includes a first conductive type substrate; an emitter layer of a second conductive type opposite the first conductive type, the emitter layer and the substrate forming a p-n junction; an anti-reflection layer positioned on the emitter layer; a plurality of first electrodes passing through the anti-reflection layer and being electrically connected to the emitter layer, at least one of the plurality of first electrodes including: a first electrode layer and a plurality of first electrode auxiliaries separated from the first electrode layer and positioned around the first electrode layer; and a second electrode layer positioned on the first electrode layer and on the plurality of first electrode auxiliaries; and a second electrode electrically connected to the substrate.

Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.