Abstract: A memory storage and retrieval device containing (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; and (c) a layer stack intermediate the first and second electrodes containing (d) at least one active layer containing at least one polymer with variable electrical conductivity; and (e) at least one passive layer comprised of a material for varying the electrical conductivity of the at least one active layer upon application of an electrical potential difference between the first and second electrodes.

Abstract: Disclosed is a memory storage and retreivel device containing (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; and (c) a layer stack intermediate the first and second electrodes containing (d) at least one active layer containing at least one polymer with variable electrical conductivity; and (e) at least one passive layer containing a material for varying the electrical conductivity of the at least one active layer upon application of an electrical potential difference between the first and second electrodes.

Abstract: A memory storage and retrieval device, comprising:

Abstract: A memory including memory cells having active and passive layers may store multiple information bits. The active layer may include an organic polymer that has a variable resistance based on the movement of charged species (ions or ions and electrons) between the passive layer and the active layer. The passive layer may be a super-ionic material that has high ion and electron mobility. The active layer may be self-assembled from a monomer in a liquid or gas.

Abstract: A memory storage and retrieval device, comprising:

Abstract: A memory storage and retrieval device, comprising:

Abstract: A memory including memory cells having active and passive layers may store multiple information bits. The active layer may include an organic polymer that has a variable resistance based on the movement of charged species (ions or ions and electrons) between the passive layer and the active layer. The passive layer may be a super-ionic material that has high ion and electron mobility. The active layer may be self-assembled from a monomer in a liquid or gas.

Abstract: A memory storage and retrieval device, comprising:

Abstract: A memory storage and retrieval device, comprising:

Abstract: A memory device with multi-bit memory cells and method of making the same uses self-assembly to provide polymer memory cells on the contacts to a transistor array. Employing self-assembly produces polymer memory cells at the precise locations of the contacts of the transistor array. The polymer memory cells change resistance values in response to electric current above a specified threshold value. The memory cells retain the resistivity values over time.

Abstract: A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system. The active layer having a high-impedance state and a low-impedance state switches from the high-impedance state to the low-impedance state when an amplitude of a writing signal exceeds a writing threshold level, to enable writing information into the memory cell. The active layer switches from the low-impedance state to the high-impedance state when an amplitude of an erasing signal having opposite polarity with respect to the writing signal exceeds an erasing threshold level, to enable erasing information from the memory cell.