Abstract: A semiconductor device includes a semiconductor layer formed partially on a semiconductor substrate by epitaxial growth, an embedded oxide film embedded between the semiconductor substrate and the semiconductor layer, first and second gate electrodes disposed on sidewalls of the semiconductor layer, a source layer formed in the semiconductor layer and disposed in the first gate electrode, and a drain layer formed in the semiconductor layer and disposed in the second gate electrode, wherein the sidewalls of the semiconductor layer are film-forming surfaces of the epitaxial growth.

Abstract: A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.

Abstract: A semiconductor device includes a first insulator formed at a part under a semiconductor layer, a second insulator formed under the semiconductor layer in an arranged manner avoiding the first insulator and having a relative dielectric constant different from that of the first insulator, a backgate electrode formed under the first and second insulators, a gate electrode formed on the semiconductor layer, and a source layer and a drain layer formed in the semiconductor layer to be respectively arranged on opposite lateral sides of the gate electrode.

Abstract: A method for manufacturing a semiconductor device, includes: (a) forming a SiGe layer on a Si substrate; (b) forming a Si layer on the SiGe layer; (c) forming a dummy pattern made of SiGe in a dummy region of the Si substrate; and (d) wet-etching and removing the SiGe layer formed under the Si layer. In the step (d), an etchant is kept to contact the dummy pattern from before a complete remove of the SiGe layer to an end of the etching.

Abstract: To laminate field effect transistors having different conductivity types, while suppressing deterioration of the crystallinity of semiconductor layers where the field effect transistors are formed. A single crystal semiconductor layer, a dielectric layer and a single crystal semiconductor layer are successively laminated on a dielectric layer, a gate electrode is formed on side walls on both sides of the single crystal semiconductor layers through gate dielectric films and formed on side surfaces on both side of the single crystal semiconductor layers, source/drain layers disposed respectively on both sides of the gate electrode are formed in the single crystal semiconductor layer 13a, and source/drain layers disposed respectively on both sides of the gate electrode are formed in the single crystal semiconductor layer, whereby a P-channel field effect transistor MP1 and an N-channel field effect transistor MN1 are laminated.

Abstract: A semiconductor device includes a gate electrode formed on a semiconductor layer, source and drain layers formed in the semiconductor layer and disposed on both sides of the gate electrode, and a field plate disposed at the back of the semiconductor layer with an insulating layer provided therebetween.

Abstract: A method of manufacturing a semiconductor device includes forming on a semiconductor substrate, a plurality of multi-layered structures each including a first semiconductor layer and a second semiconductor layer that is deposited over the first semiconductor layer and has an etching rate smaller than the etching rate of the first semiconductor layer, forming a first trench through the first semiconductor layer and the second semiconductor layer, forming a support body on sidewalls of the first semiconductor layer and the second semiconductor layer in the first trench, forming a second trench that exposes through the second semiconductor layer, etching the first semiconductor layer via the second trench selectively, to form under the second semiconductor layer, a cavity resulting from removal of the first semiconductor layer, forming a buried insulating layer that is buried in the cavity, exposing a side surface of the deposited second semiconductor layer, forming a gate insulating film on the exposed side sur

Abstract: A semiconductor substrate comprising: a semiconductor base; dielectric layers of mutually different film thicknesses formed on the semiconductor base; and semiconductor layers of mutually different film thicknesses formed on the dielectric layers.

Abstract: A method for manufacturing a semiconductor device, includes: (a) forming a SiGe layer on a Si substrate; (b) forming a Si layer on the SiGe layer; (c) forming a dummy pattern made of SiGe in a dummy region of the Si substrate; and (d) wet-etching and removing the SiGe layer formed under the Si layer. In the step (d), an etchant is kept to contact the dummy pattern from before a complete remove of the SiGe layer to an end of the etching.

Abstract: A method for manufacturing a piezoelectric oscillator includes the steps of: forming a first semiconductor layer above a substrate; forming a second semiconductor layer above the first semiconductor layer; forming a first opening section that exposes the substrate by removing the second semiconductor layer and the first semiconductor layer in an area for forming a support section; forming the support section in the first opening section; forming a driving section that generates flexing vibration in an oscillation section above the second semiconductor layer; patterning the second semiconductor layer to form the oscillation section having the supporting section as a base end and another end provided so as not to contact the supporting section, and a second opening section that exposes the first semiconductor layer; and removing the first semiconductor layer through a portion exposed at the second opening section by an etching method, thereby forming a cavity section at least below the oscillation section, wher

Abstract: A method of manufacturing a semiconductor device, comprises; a) forming a SiGe layer on a substrate; b) forming a Si layer on the SiGe layer ; c) forming a groove that exposes the side surface of the SiGe layer by partly etching the Si layer and the SiGe layer; and d) forming a hollow portion between the substrate and, the Si layer by etching the SiGe layer via the groove. Step d) further comprises: forming a part of the hollow portion by supplying a new liquid including a fluorinated nitric acid solution to the substrate and etching the SiGe layer, removing the fluorinated nitric acid solution once from the hollow portion that is under formation; and etching the SiGe layer by refilling a new liquid including a fluorinated nitric acid solution to the hollow portion.

Abstract: A method of a semiconductor device comprises: a) depositing a first semiconductor layer and a second semiconductor layer in a semiconductor substrate in series; b) forming a first groove penetrating the first and second semiconductor layers and placed adjacent to an element region by partly etching the first and second semiconductor layers; c) forming a supporting member that supports the second semiconductor layer and covers over the second semiconductor layer and is embedded into the first groove; d) forming a second groove that exposes the first semiconductor layer from the bottom of the second semiconductor layer supported by the supporting member and is placed near the element region; and e) forming a cavity between the semiconductor substrate and the second semiconductor layer in the element region by etching the first semiconductor layer via the second groove under a specific condition in which the first semiconductor layer is easily etched, compared to the second semiconductor layer.

Abstract: A method for manufacturing a semiconductor device comprises: (a) stacking a first semiconductor layer and a second semiconductor layer serially on a semiconductor substrate; (b) providing a protection film above the second semiconductor layer; (c) providing a first groove that penetrates the protection film, the second semiconductor layer, and the first semiconductor layer and surrounds an element region in plan view so as to define a boundary between the element region and a remaining region, by partially etching the protection film, the second semiconductor layer, and the first semiconductor layer; (d) providing a support film so as to fill the first groove and cover the second semiconductor layer; (e) providing a second groove that provides a support including the support film and exposes the first semiconductor layer from under the second semiconductor layer, by partially etching the support film in a condition that the support film is more readily etched than the protection film; and (f) providing a cavi

Abstract: A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.

Abstract: A semiconductor device includes a substrate, a first insulating film, a first semiconductor layer disposed above the substrate with the first insulating film therebetween, a second semiconductor layer disposed above the first semiconductor layer with a second insulating film therebetween, a first conductivity type metal oxide semiconductor (MOS) disposed on at least one side surface of the first semiconductor layer, a second conductivity type MOS disposed on at least one side surface of the second semiconductor layer, a charge storage layer common to the first and second MOS transistors, and a control gate common to the first and second MOS transistors. The common charge storage layer is continuously provided from the side surface of the first semiconductor layer on which the first conductivity type MOS transistor is disposed to the side surface of the second semiconductor layer on which the second conductivity type MOS transistor is disposed.

Abstract: A semiconductor substrate comprising a semiconductor base, a dielectric layer formed in at least a part of an area on the semiconductor base, and a single crystal semiconductor layers having mutually different film thicknesses, disposed on the dielectric layer and formed by epitaxial growth.

Abstract: A semiconductor device includes a semiconductor substrate in which an insulating layer is formed in a part of an region, a semiconductor layer is formed by epitaxial growth and located on the insulating layer, a first gate electrode is formed at the sidewall of the semiconductor layer, first source and drain regions are formed in the semiconductor layer and located at the side of the first gate electrode, a second electrode is formed on the semiconductor substrate, and second source and drain regions are formed in the semiconductor substrate and located at the side of the second gate electrode.

Abstract: A semiconductor substrate comprising: a semiconductor base; dielectric layers of mutually different film thicknesses formed on the semiconductor base; and semiconductor layers of mutually different film thicknesses formed on the dielectric layers.

Abstract: A semiconductor substrate comprising a semiconductor base, a dielectric layer formed in at least a part of an area on the semiconductor base, and a single crystal semiconductor layers having mutually different film thicknesses, disposed on the dielectric layer and formed by epitaxial growth.

Abstract: A method of manufacturing semiconductor substrates. After supporting layers are provided on side walls of grooves formed in a semiconductor substrate, grooves that expose a second semiconductor layer are formed. Etching gas or etching liquid is brought in contact with the first semiconductor layer through the grooves, to form a void portion between the semiconductor substrate 1 and the second semiconductor layer. By thermally oxidizing the semiconductor substrate, the second semiconductor layer and the supporting layers, an oxide film is formed in the void portion between the semiconductor substrate and the second semiconductor layer, an oxide film is formed on side walls of the semiconductor substrate in the grooves, and the supporting layers are changed into oxide films.