Abstract: The present disclosure relates to a cathode active material for an all-solid-state battery with a controlled particle size and a method for preparing the same. In particular, the cathode active material includes lithium and a transition metal, wherein the cathode active material has a single peak in the range of 1 ?m to 10 ?m as a result of particle size distribution (PSD) analysis.

Abstract: Provided are a method for preparing a polyetherketoneketone and a polyetherketoneketone prepared thereby, wherein, at the time of a polymerization reaction, nitrogen gas is blown into a liquid reaction medium while stirring, thereby quickly removing hydrochloric acid, which is a by-product generated during the reaction, and preventing aggregation of resin particles, thus suppressing the generation of scales.

Abstract: A memory device includes a memory cell array including a first switch cell, a second switch cell, and a plurality of memory cells disposed between the first the second switch cells and connected to a plurality of word lines, and a control circuit configured to perform a program operation by providing a program voltage to a first word line among the plurality of word lines, a switch voltage to a second word line among the plurality of word lines, and a pass voltage to remaining word lines among the plurality of word lines, wherein the control circuit is configured to turn off the first switch cell and the second switch cell in a first section of the program operation, and configured to turn on the first switch cell and increase the switch voltage in a second section of the program operation later than the first section.

Abstract: A memory device includes a memory cell array including a first switch cell, a second switch cell, and a plurality of memory cells disposed between the first the second switch cells and connected to a plurality of word lines, and a control circuit configured to perform a program operation by providing a program voltage to a first word line among the plurality of word lines, a switch voltage to a second word line among the plurality of word lines, and a pass voltage to remaining word lines among the plurality of word lines, wherein the control circuit is configured to turn off the first switch cell and the second switch cell in a first section of the program operation, and configured to turn on the first switch cell and increase the switch voltage in a second section of the program operation later than the first section.

Abstract: A nonvolatile memory system includes a nonvolatile memory device and a memory controller that controls the nonvolatile memory device. The nonvolatile memory device includes multiple memory blocks. Each of the memory blocks includes memory cells. Each of the memory cells has any one of an erase state and one of multiple different program states. An operation method of the nonvolatile memory system includes receiving a physical erase command from an external device. The operation method also includes performing a fast erase operation, responsive to the received physical erase command, with respect to at least one memory block so that first memory cells of the at least one memory block have a fast erase state different from the erase state.

Abstract: An operating method of a storage device includes simultaneously buffering first data in a first nonvolatile memory device and a second nonvolatile memory device, simultaneously buffering second data in the second nonvolatile memory device and a third nonvolatile memory device, performing a parity operation on the first data and the second data in the second nonvolatile memory device to generate a parity, and programming the first data, the second data, and the parity into the first nonvolatile memory device, the third nonvolatile memory device, and the second nonvolatile memory device, respectively.

Abstract: A nonvolatile memory system includes a nonvolatile memory device and a memory controller that controls the nonvolatile memory device. The nonvolatile memory device includes multiple memory blocks. Each of the memory blocks includes memory cells. Each of the memory cells has any one of an erase state and one of multiple different program states. An operation method of the nonvolatile memory system includes receiving a physical erase command from an external device. The operation method also includes performing a fast erase operation, responsive to the received physical erase command, with respect to at least one memory block so that first memory cells of the at least one memory block have a fast erase state different from the erase state.

Abstract: An operating method is provided which includes receiving a read command and a read address, performing a read operation about memory cells selected according to the read address, and performing a reliability verification read operation about unselected memory cells adjacent to the selected memory cells. A number of memory cells each corresponding to at least one state of an erase state and program states of the unselected memory cells is counted as a count value based on the result of the reliability verification read operation. Data read through the read operation is output to an external device and data read through the reliability verification read operation is not output to the external device.

Abstract: A nonvolatile memory device comprises a cell array connected to a plurality of bit lines in an all bit line structure, a page buffer circuit connected to the plurality of bit lines, and control logic configured to control the page buffer circuit. The control logic controls the page buffer circuit to sense memory cells corresponding to both even-numbered and odd-numbered columns of a selected page in a first read mode and to sense memory cells corresponding to one of the even-numbered and odd-numbered columns of the selected page in a second read mode. A sensing operation is performed at least twice in the first read mode and once in the second read mode.

Abstract: Disclosed are a card socket device and an electronic apparatus including the same. The card socket device includes a seat portion configured to receive an attachable card; and one or more connection terminal portions formed in the seat portion and configured to form an electrical connection with one or more connection pads formed in a bottom surface of the attachable card, wherein the seat portion is configured such that a space accommodating the attachable card is upwardly opened.

Abstract: An operating method is provided which includes receiving a read command and a read address, performing a read operation about memory cells selected according to the read address, and performing a reliability verification read operation about unselected memory cells adjacent to the selected memory cells. A number of memory cells each corresponding to at least one state of an erase state and program states of the unselected memory cells is counted as a count value based on the result of the reliability verification read operation. Data read through the read operation is output to an external device and data read through the reliability verification read operation is not output to the external device.

Abstract: A method of operating a storage device may include receiving a read command and a read address, performing a read operation on selected memory cells corresponding to a selected string selection line and a selected word line based on the read address and performing a reliability verification read on unselected memory cells. Data read by the read operation may be output to an external device, and data read by the reliability verification read may be not output to the external device.

Abstract: An operating method is provided which includes receiving a read command and a read address, performing a read operation about memory cells selected according to the read address, and performing a reliability verification read operation about unselected memory cells adjacent to the selected memory cells. A number of memory cells each corresponding to at least one state of an erase state and program states of the unselected memory cells is counted as a count value based on the result of the reliability verification read operation. Data read through the read operation is output to an external device and data read through the reliability verification read operation is not output to the external device.

Abstract: A method of operating a storage device may include receiving a read command and a read address, performing a read operation on selected memory cells corresponding to a selected string selection line and a selected word line based on the read address and performing a reliability verification read on unselected memory cells. Data read by the read operation may be output to an external device, and data read by the reliability verification read may be not output to the external device.

Abstract: A method of operating a storage device may include receiving a read command and a read address, performing a read operation on selected memory cells corresponding to a selected string selection line and a selected word line based on the read address and performing a reliability verification read on unselected memory cells. Data read by the read operation may be output to an external device, and data read by the reliability verification read may be not output to the external device.

Abstract: An operating method of a storage device includes simultaneously buffering first data in a first nonvolatile memory device and a second nonvolatile memory device, simultaneously buffering second data in the second nonvolatile memory device and a third nonvolatile memory device, performing a parity operation on the first data and the second data in the second nonvolatile memory device to generate a parity, and programming the first data, the second data, and the parity into the first nonvolatile memory device, the third nonvolatile memory device, and the second nonvolatile memory device, respectively.

Abstract: An operating method is provided which includes receiving a read command and a read address, performing a read operation about memory cells selected according to the read address, and performing a reliability verification read operation about unselected memory cells adjacent to the selected memory cells. A number of memory cells each corresponding to at least one state of an erase state and program states of the unselected memory cells is counted as a count value based on the result of the reliability verification read operation. Data read through the read operation is output to an external device and data read through the reliability verification read operation is not output to the external device.

Abstract: A method of operating a storage device may include receiving a read command and a read address, performing a read operation on selected memory cells corresponding to a selected string selection line and a selected word line based on the read address and performing a reliability verification read on unselected memory cells. Data read by the read operation may be output to an external device, and data read by the reliability verification read may be not output to the external device.