Patents by Inventor Justin Gordon
Justin Gordon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12349475Abstract: Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.Type: GrantFiled: October 25, 2023Date of Patent: July 1, 2025Assignee: Raytheon CompanyInventors: Eric Miller, Christian M. Boemler, Justin Gordon Adams Wehner, Drew Fairbanks, Sean P. Kilcoyne
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Publication number: 20250207212Abstract: Provided herein are methods for solid state quenching of metal including transferring a heated metal workpiece having an initial workpiece temperature to a press, the press including a first die having an initial first die temperature, the initial first die temperature being lower than the initial workpiece temperature and a second die positioned opposite the first die and having an initial second die temperature, the initial second die temperature being lower than the initial workpiece temperature, wherein the first and second dies are each constructed of a material having a thermal conductivity equal to or greater than 90 W/mK at a temperature of 70 F, closing the press to bring the first die and the second die into pressurized contact with the heated metal workpiece, continuing the pressurized contact between the first and second dies and the metal workpiece to cool the metal workpiece from the initial workpiece temperature to a quenched workpiece temperature, opening the press when the metal workpiece reaType: ApplicationFiled: April 5, 2024Publication date: June 26, 2025Inventors: George C. TUNIS III, Emily TUNIS, Steven J. WINCKLER, Scott KENDALL, Justin GORDON, Brendan FOGARTY, Alex MILLAR, Ben KREMER, Jonathon MONTINI
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Publication number: 20250164218Abstract: Provided herein are remote viewing shields including a ballistic shield and a remote viewing scope mounted to the ballistic shield and including a viewing port located behind the shield and positioned to permit user viewing of threats in front of the shield by looking around the shield.Type: ApplicationFiled: January 2, 2024Publication date: May 22, 2025Inventors: George C. TUNIS, III, Steven J. WINCKLER, Justin GORDON
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Patent number: 12073271Abstract: A method of generating a barcode pattern includes: identifying a silhouette comprising a boundary within which a barcode pattern is to be printed; generating a barcode pattern comprising multiple instances of a two-dimensional barcode, in which the instances include barcodes of at least two different sizes; and generating a print file that includes information for printing the barcode pattern within the silhouette.Type: GrantFiled: July 24, 2023Date of Patent: August 27, 2024Assignee: XR Goods CompanyInventor: Schuyler Justin Gordon Van Sickle
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Publication number: 20240255782Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.Type: ApplicationFiled: March 11, 2024Publication date: August 1, 2024Inventors: Jamal I. Mustafa, Justin Gordon Adams Wehner, Christopher R. Koontz
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Patent number: 11953765Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.Type: GrantFiled: April 10, 2023Date of Patent: April 9, 2024Assignee: RAYTHEON COMPANYInventors: Jamal I. Mustafa, Justin Gordon Adams Wehner, Christopher R. Koontz
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Publication number: 20240055466Abstract: Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.Type: ApplicationFiled: October 25, 2023Publication date: February 15, 2024Applicant: Raytheon CompanyInventors: Eric Miller, Christian M. Boemler, Justin Gordon Adams Wehner, Drew Fairbanks, Sean P. Kilcoyne
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Publication number: 20240037362Abstract: A method of generating a barcode pattern includes: identifying a silhouette comprising a boundary within which a barcode pattern is to be printed; generating a barcode pattern comprising multiple instances of a two-dimensional barcode, in which the instances include barcodes of at least two different sizes; and generating a print file that includes information for printing the barcode pattern within the silhouette.Type: ApplicationFiled: July 24, 2023Publication date: February 1, 2024Inventor: Schuyler Justin Gordon Van Sickle
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Patent number: 11886095Abstract: A scalable independent unit cell device architecture may include a phase-shifting element and a phase shift driver both integrated within the unit cell device. The phase shift driver may be coupled to the phase-shifting element and the phase shift driver may independently control the phase-shifting element to produce an optical beam having a desired phase. The unit cell device may further include an optical antenna that outputs the beam having the desired phase. The unit cell device may be formed as an opto-electronic hybrid optimized to leverage direct bond hybridization (DBH) to attach an electronic integrated circuit wafer to a side of a photonic integrated circuit wafer. The resulting unit cell device (i.e., 24 microns) may tightly integrate individual element-level phase control, which may be implemented within large-scale two-dimensional photonic arrays with hemispherical beam steering.Type: GrantFiled: April 15, 2022Date of Patent: January 30, 2024Assignee: Raytheon CompanyInventors: Christopher Casimir Brough, Sean P. Kilcoyne, Richard Wahl, Thomas Yengst, Justin Gordon Adams Wehner
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Patent number: 11837623Abstract: Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.Type: GrantFiled: October 12, 2020Date of Patent: December 5, 2023Assignee: Raytheon CompanyInventors: Eric Miller, Christian M. Boemler, Justin Gordon Adams Wehner, Drew Fairbanks, Sean P. Kilcoyne
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Publication number: 20230333442Abstract: A scalable independent unit cell device architecture may include a phase-shifting element and a phase shift driver both integrated within the unit cell device. The phase shift driver may be coupled to the phase-shifting element and the phase shift driver may independently control the phase-shifting element to produce an optical beam having a desired phase. The unit cell device may further include an optical antenna that outputs the beam having the desired phase. The unit cell device may be formed as an opto-electronic hybrid optimized to leverage direct bond hybridization (DBH) to attach an electronic integrated circuit wafer to a side of a photonic integrated circuit wafer. The resulting unit cell device (i.e., 24 microns) may tightly integrate individual element-level phase control, which may be implemented within large-scale two-dimensional photonic arrays with hemispherical beam steering.Type: ApplicationFiled: April 15, 2022Publication date: October 19, 2023Inventors: Christopher Casimir Brough, Sean P. Kilcoyne, Richard Wahl, Thomas Yengst, Justin Gordon Adams Wehner
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Publication number: 20230244096Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Inventors: Jamal I. Mustafa, Justin Gordon Adams Wehner, Christopher R. Koontz
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Patent number: 11650438Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.Type: GrantFiled: August 2, 2019Date of Patent: May 16, 2023Assignee: RAYTHEON COMPANYInventors: Jamal I. Mustafa, Justin Gordon Adams Wehner, Christopher R. Koontz
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Publication number: 20220268570Abstract: Apparatus and associated methods relate to passive ranging of objects by using relative positional relation of the object to a coded aperture ranged object. A first range to a first object is determined via a coded-aperture ranging system based on a point spread function optimization of an image of the first object. The terrain surface between the first object and a second object is mapped via a 3D polarimetry system. A second range to the second object is then calculated via a range calculator based on the first range and the terrain surface between the first object and the second object.Type: ApplicationFiled: February 19, 2021Publication date: August 25, 2022Inventors: Justin Gordon Adams Wehner, Jamal Ibrahim Mustafa
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Publication number: 20220115423Abstract: Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.Type: ApplicationFiled: October 12, 2020Publication date: April 14, 2022Applicant: Raytheon CompanyInventors: Eric Miller, Christian M. Boemler, Justin Gordon Adams Wehner, Drew Fairbanks, Sean P. Kilcoyne
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Patent number: 10971538Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.Type: GrantFiled: September 19, 2018Date of Patent: April 6, 2021Assignee: Raytheon CompanyInventors: John J. Drab, Justin Gordon Adams Wehner, Christian M. Boemler
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Publication number: 20210033893Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.Type: ApplicationFiled: August 2, 2019Publication date: February 4, 2021Inventors: Jamal I. Mustafa, Justin Gordon Adams Wehner, Christopher R. Koontz
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Patent number: 10352659Abstract: A window insert assembly providing ballistic protection for a window opening of a vehicle side door. The window insert assembly includes a window insert formed from a ballistic-resistant material and a wedge assembly to wedge the window insert within a window frame of the vehicle door. A method of providing ballistic protection for the window opening.Type: GrantFiled: June 15, 2018Date of Patent: July 16, 2019Assignee: Hardwire, LLCInventors: George C. Tunis, III, Scott Kendall, Justin Gordon
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Patent number: 10267997Abstract: A scene projector including an array of light emitting pixels, a tunable filter element, and a spatial light modulator. The tunable filter element is optically coupled to the array of light emitting pixels such that light emitted from the array of light emitting pixels is passed through the tunable filter element as filtered light. The spatial light modulator is optically coupled to the array of light emitting pixels and is configured to generate transmitted light by interacting with the filtered light to control at least one of an amplitude, a phase, and a polarization of the filtered light.Type: GrantFiled: November 11, 2015Date of Patent: April 23, 2019Assignee: RAYTHEON COMPANYInventors: Justin Gordon Adams Wehner, Duane D. Smith, Edward Peter Gordon Smith, Adam M. Kennedy
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Publication number: 20190019836Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.Type: ApplicationFiled: September 19, 2018Publication date: January 17, 2019Applicant: Raytheon CompanyInventors: John J. Drab, Justin Gordon Adams Wehner, Christian M. Boemler