Patents by Inventor Justin Gordon
Justin Gordon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170192113Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.Type: ApplicationFiled: January 6, 2016Publication date: July 6, 2017Applicant: Raytheon CompanyInventors: David R. Rhiger, Justin Gordon Adams Wehner, Kelly Jones, Siddhartha Ghosh
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Patent number: 9651340Abstract: A window insert assembly providing ballistic protection for a window of a vehicle side door. The window insert assembly includes a window insert formed from a ballistic-resistant material and a wedge assembly to wedge the window insert within a window frame of the vehicle door. A method of providing ballistic protection for the window.Type: GrantFiled: June 24, 2016Date of Patent: May 16, 2017Assignee: Hardwire, LLCInventors: George C. Tunis, III, Scott Kendall, Justin Gordon
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Publication number: 20170131475Abstract: A scene projector including an array of light emitting pixels, a tunable filter element, and a spatial light modulator. The tunable filter element is optically coupled to the array of light emitting pixels such that light emitted from the array of light emitting pixels is passed through the tunable filter element as filtered light. The spatial light modulator is optically coupled to the array of light emitting pixels and is configured to generate transmitted light by interacting with the filtered light to control at least one of an amplitude, a phase, and a polarization of the filtered light.Type: ApplicationFiled: November 11, 2015Publication date: May 11, 2017Inventors: Justin Gordon Adams Wehner, Duane D. Smith, Edward Peter Gordon Smith, Adam M. Kennedy
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Publication number: 20170115099Abstract: A window insert assembly for providing ballistic protection to a window of a vehicle side door is provided. The window insert assembly includes a window insert formed from a ballistic-resistant material and a wedge assembly to wedge the window insert within a window frame of the vehicle door. A method of providing ballistic protection of a vehicle window and a method of manufacturing a window insert assembly are also provided.Type: ApplicationFiled: June 24, 2016Publication date: April 27, 2017Inventors: George C. Tunis, III, Scott Kendall, Justin Gordon
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Patent number: 9630368Abstract: Multi-spectral filter elements and methods of formation are disclosed. Each multi-spectral filter element may include a plurality of sub-filters that are, in some examples, each adapted to respond to electromagnetic radiation within respective ones of a plurality of spectral bands. A method example includes forming an optical cavity layer. Volume of the optical cavity layer can be reduced in at least N?1 number of spatial regions. The reducing may include a number of selective removal steps equal to the binary logarithm function Log2 N. In this example, each spatial region corresponds to a respective one of the plurality sub-filters. The plurality of sub-filters includes at least N sub-filters. In particular examples, the respective ones of the plurality of spectral bands may be at least partially discrete with respect to each other.Type: GrantFiled: October 10, 2013Date of Patent: April 25, 2017Assignee: RAYTHEON COMPANYInventor: Justin Gordon Adams Wehner
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Patent number: 9536917Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).Type: GrantFiled: November 19, 2013Date of Patent: January 3, 2017Assignee: RAYTHEON COMPANYInventors: Justin Gordon Adams Wehner, Edward P. Smith, Stephanie Bostwick
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Publication number: 20160363419Abstract: A window insert assembly for providing ballistic protection to a window of a vehicle side door is provided. The window insert assembly includes a window insert formed from a ballistic-resistant material and a wedge assembly to wedge the window insert within a window frame of the vehicle door. A method of providing ballistic protection of a vehicle window and a method of manufacturing a window insert assembly are also provided.Type: ApplicationFiled: May 5, 2016Publication date: December 15, 2016Inventors: George C. Tunis, III, Scott Kendall, Justin Gordon
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Patent number: 9472697Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.Type: GrantFiled: January 14, 2015Date of Patent: October 18, 2016Assignee: RAYTHEON COMPANYInventors: Justin Gordon Adams Wehner, Edward Peter Gordon Smith
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Publication number: 20160181448Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.Type: ApplicationFiled: January 14, 2015Publication date: June 23, 2016Inventors: Justin Gordon Adams Wehner, Edward Peter Gordon Smith
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Patent number: 9307461Abstract: A femtocell base station in a telecommunications network identifies, for each user device served by the base station, which other base stations in the network that user device is authorized to access. The base station also determines a group identity for each of a plurality of possible neighbor cell base stations in the network. Based on this information, the base station identifies at least one possible handover target cell base station for each user device served by the base station, based on the identified other base stations in the network that user device is authorized to access; and based on the identified group identity for each of a plurality of possible neighbor cell base stations in the network.Type: GrantFiled: January 20, 2012Date of Patent: April 5, 2016Assignee: Ubiquisys LimitedInventors: Justin Gordon Johnstone, James Briers
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Patent number: 9305948Abstract: A dynamically controllable polarizer integrated with an imaging detector to provide “on demand” variable polarization measurements. In one example, an imaging system includes a detector array including a plurality of pixels arranged in a two-dimensional array, and a dynamic polarizer coupled to the detector array, the dynamic polarizer including at least one patterned layer of a material disposed on the detector array, the material being operable to alter its conductivity responsive to an applied stimulus to reversibly transition between a polarizing state and a non-polarizing state.Type: GrantFiled: May 30, 2014Date of Patent: April 5, 2016Assignee: RAYTHEON COMPANYInventors: Justin Gordon Adams Wehner, Siddhartha Ghosh
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Publication number: 20160086998Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.Type: ApplicationFiled: November 20, 2015Publication date: March 24, 2016Applicant: RAYTHEON COMPANYInventors: John J. Drab, Justin Gordon Adams Wehner, Christian M. Boemler
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Patent number: 9224768Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.Type: GrantFiled: August 5, 2013Date of Patent: December 29, 2015Assignee: Raytheon CompanyInventors: John J. Drab, Justin Gordon Adams Wehner, Christian M. Boemler
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Publication number: 20150349006Abstract: A dynamically controllable polarizer integrated with an imaging detector to provide “on demand” variable polarization measurements. In one example, an imaging system includes a detector array including a plurality of pixels arranged in a two-dimensional array, and a dynamic polarizer coupled to the detector array, the dynamic polarizer including at least one patterned layer of a material disposed on the detector array, the material being operable to alter its conductivity responsive to an applied stimulus to reversibly transition between a polarizing state and a non-polarizing state.Type: ApplicationFiled: May 30, 2014Publication date: December 3, 2015Applicant: RAYTHEON COMPANYInventors: Justin Gordon Adams Wehner, Siddhartha Ghosh
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Publication number: 20150243825Abstract: A radiation detector having a pair of adjacent mesas disposed on a common layer. The common layer comprises a first semiconductor layer having a first conductivity type and an energy bandgap responsive to radiation in a first spectral region. Each of the mesas comprises: a second semiconductor; and a third semiconductor layer disposed on the second semiconductor layer having the first conductivity type and an energy bandgap responsive to radiation in a second spectral region. The second semiconductor layer may have a conductivity type opposite the first conductivity type or the three layers may provide an nBn or pBp structure. The third semiconductor layer of the second mesa produces minority carriers, in response to the radiation in the second spectral region, flowing as unwanted carriers into the common layer towards the first mesa. A barrier region is disposed in the common layer to prevent the unwanted carriers from passing from the second mesa to the first mesa.Type: ApplicationFiled: February 27, 2014Publication date: August 27, 2015Applicant: Raytheon CompanyInventors: Craig Keasler, Justin Gordon Adams Wehner, Richard H. Wyles, Donald F. King, Peter C. Roberts, Christopher L. Mears
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Publication number: 20150221796Abstract: A photo-detector having a photonic crystal structure for absorbing photons passing perpendicular to a surface of the photo-detector and a plasmonic resonance structure for absorbing photons passing along the surface of the photo-detector.Type: ApplicationFiled: February 6, 2014Publication date: August 6, 2015Applicant: RAYTHEON COMPANYInventors: Edward P. Smith, Anne Itsuno, Justin Gordon Adams Wehner
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Publication number: 20150137295Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).Type: ApplicationFiled: November 19, 2013Publication date: May 21, 2015Applicant: RAYTHEON COMPANYInventors: Justin Gordon Adams Wehner, Edward P. Smith, Stephanie Bostwick
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Publication number: 20150035014Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.Type: ApplicationFiled: August 5, 2013Publication date: February 5, 2015Applicant: Raytheon CompanyInventors: John J. Drab, Justin Gordon Adams Wehner, Christian M. Boemler
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Patent number: 8941203Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging plasmon resonance for performance benefits. In one example, a radiation detector includes a semiconductor absorber layer having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer coupled to the absorber layer and having a second electrical conductivity type, and a plasmonic resonator coupled to the collector layer and having a periodic structure including a plurality of features arranged in a regularly repeating pattern.Type: GrantFiled: September 12, 2012Date of Patent: January 27, 2015Assignee: Raytheon CompanyInventors: Justin Gordon Adams Wehner, Edward Peter Gordon Smith
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Patent number: 8928883Abstract: In certain embodiments, a system for detecting an agent includes a resonator device configured to receive an agent. The resonator device is also configured to transmit light received from a light source, the transmitted light having an altered peak wavelength due to the presence of the received agent. The system further includes a filter device configured to filter the transmitted light having the altered peak wavelength such that the transmitted light having the altered peak wavelength does not reach one or more detectors of a detector array configured to receive transmitted light not filtered by the filter device. The system further includes a processing system operable to determine that the one or more detectors of the detector array are not generating a signal, the absence of the signal being generated by the one or more detectors of the detector array indicating the presence of the agent.Type: GrantFiled: November 17, 2010Date of Patent: January 6, 2015Assignee: Raytheon CompanyInventors: Frank B. Jaworski, Justin Gordon Adams Wehner, Adam M. Kennedy, Darin S. Williams, Anuradha Murthy Agarwal, Juejun Hu