Abstract: Disclosed herein is a hinge device for a cellular phone, which has no device housing and thus, can achieve a greater slimness of the cellular phone and reduce the generation of a noise during a sliding operation of a slide body included in the cellular phone. The hinge device includes a first push rod connected to a main body of the cellular phone and having a pin and a pin hole, and a second push rod connected to a slide body of the cellular phone and having a pin and a pin hole. The pin of the first push rod is penetrated through the pin hole of the second push rod, and the pin of the second push rod is penetrated through the pin hole of the first push rod. A spring is provided around each pin.

Abstract: Provided are a digital broadcast network system for providing a widget service and an operating method thereof The digital broadcast network system includes a communication network, a broadcast terminal, and a broadcasting station system. The broadcasting station system provides widget advertisement contents, received from a widget content provider, to the broadcast terminal. The broadcast terminal outputs the received widget advertisement contents to a display unit in response to a widget display control signal, and transmits product purchase information to the broadcasting station system when receiving a purchase request signal for products included in the widget advertisement contents.

Abstract: The present invention relates to a spectroscopy analyzer for real-time diagnostics of process, and more particularly, to a spectroscopy analyzer for real-time diagnostics of process, in which a beam is injected to a reaction byproduct or a reactant and then an output beam is measured, thereby performing quantitative and qualitative analysis of the reaction byproduct or the reactant.

Abstract: Disclosed herein is a hinge device for a cellular phone, which has no device housing and thus, can achieve a greater slimness of the cellular phone and reduce the generation of a noise during a sliding operation of a slide body included in the cellular phone. The hinge device includes a first push rod connected to a main body of the cellular phone and having a pin and a pin hole, and a second push rod connected to a slide body of the cellular phone and having a pin and a pin hole. The pin of the first push rod is penetrated through the pin hole of the second push rod, and the pin of the second push rod is penetrated through the pin hole of the first push rod. A spring is provided around each pin.

Abstract: The present invention provides a vacuum gauge calibration apparatus capable of calibrating and testing a vacuum gauge without displacement or separation of the vacuum gauge, the vacuum gauge being attached to a vacuum device under operation together with developing a movable vacuum gauge calibration device, and an operating method thereof.

Abstract: The present invention relates to a spectroscopy analyzer for real-time diagnostics of process, and more particularly, to a spectroscopy analyzer for real-time diagnostics of process, in which a beam is injected to a reaction byproduct or a reactant and then an output beam is measured, thereby performing quantitative and qualitative analysis of the reaction byproduct or the reactant.

Abstract: A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.

Abstract: The present invention relates to an apparatus and method for monitoring an electron density and electron temperature of a plasma.

Abstract: A heating chamber which can be used during a reflow process to form a metal wiring having a multi-layered writing structure and a method of heating a wafer using the same, are provided. The heating chamber is movable upward and downward between the upper process position and the lower loading position, and includes a pedestal having a supporting surface for supporting a wafer, a cover installed above the pedestal to form a processing area together with the supporting surface when the pedestal is placed in its raised process position and a heating unit for heating the waver. In the method of heating the wafer, the temperature in the processing area is maintained suitable for heating the wafer before the wafer is loaded onto the supporting surface, the wafer is loaded onto the supporting surface and the loaded wafer is heating in the processing area.

Abstract: A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.

Abstract: Methods of forming a metal wiring layer on an integrated circuit include forming an insulating pattern including a recess region on an integrated circuit substrate. A metal layer is formed in the recess region and on a top surface of the insulting pattern. The metal layer is removed from the top surface of the insulating pattern adjacent the recess region and from an upper portion of the recess region. An aluminum film is formed on the metal layer at a process temperature less than a reflow temperature of the metal layer to substantially fill the upper portion of the recess region after removing the metal layer. A metal film is formed on the aluminum film at a process temperature less than the reflow temperature of the etched metal layer.

Abstract: A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.

Abstract: An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.

Abstract: Methods of forming a metal wiring layer on an integrated circuit include forming an insulating pattern including a recess region on an integrated circuit substrate. A metal layer is formed in the recess region and on a top surface of the insulting pattern. The metal layer is removed from the top surface of the insulating pattern adjacent the recess region and from an upper portion of the recess region. An aluminum film is formed on the metal layer at a process temperature less than a reflow temperature of the metal layer to substantially fill the upper portion of the recess region after removing the metal layer. A metal film is formed on the aluminum film at a process temperature less than the reflow temperature of the etched metal layer.

Abstract: A recess is formed in a microelectronic substrate, and then a metal-containing layer is formed that conforms to an inner surface of the recess and to a surface of the substrate adjacent the recess. A carbon concentration in a portion of the metal-containing layer on the surface of the substrate adjacent the recess is decreased in comparison to a portion of the metal-containing layer within the recess, e.g., using a plasma treatment that has a greater effect on the surface outside of the recess. Aluminum is then deposited on the metal-containing layer to form an aluminum layer that conforms to the inner surface of the recess and to the surface of the substrate adjacent the recess. Preferably, the carbon concentration in the portion of the metal-containing layer within the recess is sufficiently great to cause aluminum to deposited at a greater rate on the portion of the metal-containing layer within the recess.

Abstract: A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.

Abstract: An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.

Abstract: An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.

Abstract: A heating chamber which can be used during a reflow process to form a metal wiring having a multi-layered writing structure and a method of heating a wafer using the same, are provided. The heating chamber is movable upward and downward between the upper process position and the lower loading position, and includes a pedestal having a supporting surface for supporting a wafer, a cover installed above the pedestal to form a processing area together with the supporting surface when the pedestal is placed in its raised process position and a heating unit for heating the waver. In the method of heating the wafer, the temperature in the processing area is maintained suitable for heating the wafer before the wafer is loaded onto the supporting surface, the wafer is loaded onto the supporting surface and the loaded wafer is heating in the processing area.

Abstract: An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.