Patents by Inventor Jyh-Cherng Sheu
Jyh-Cherng Sheu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7987813Abstract: Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.Type: GrantFiled: January 6, 2009Date of Patent: August 2, 2011Assignee: Optomec, Inc.Inventors: Michael J. Renn, Bruce H. King, Marcelino Essien, Gregory J. Marquez, Manampathy G. Giridharan, Jyh-Cherng Sheu
-
Publication number: 20110127648Abstract: An integrated circuit structure includes a first chip including a first edge; and a second chip having a second edge facing the first edge. A scribe line is between and adjoining the first edge and the second edge. A heat spreader includes a portion in the scribe line, wherein the heat spreader includes a plurality of vias and a plurality of metal lines. The portion of the heat spreader in the scribe line has a second length at least close to, or greater than, a first length of the first edge.Type: ApplicationFiled: February 8, 2011Publication date: June 2, 2011Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsien-Wei Chen, Yu-Wen Liu, Jyh-Cherng Sheu, Hao-Yi Tsai, Shin-Puu Jeng, Chen-Hua Yu, Shang-Yun Hou
-
Publication number: 20110129615Abstract: Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.Type: ApplicationFiled: December 22, 2010Publication date: June 2, 2011Applicant: OPTOMEC, INC. FKA OPTOMEC DESIGN COMPANYInventors: Michael J. Renn, Bruce H. King, Marcelino Essien, Gregory J. Marquez, Manampathy G. Giridharan, Jyh-Cherng Sheu
-
Patent number: 7938079Abstract: Method and apparatus for improved maskless deposition of electronic and biological materials using an extended nozzle. The process is capable of direct deposition of features with linewidths varying from a few microns to a fraction of a millimeter, and can be used to deposit features on targets with damage thresholds near 100° C. or less. Deposition and subsequent processing may be performed under ambient conditions and produce linewidths as low as 1 micron, with sub-micron edge definition. The extended nozzle reduces particle overspray and has a large working distance; that is, the orifice to target distance may be several millimeters or more, enabling direct write onto non-planar surfaces. The nozzle allows for deposition of features with linewidths that are approximately as small as one-twentieth the size of the nozzle orifice diameter, and is preferably interchangeable, enabling rapid variance of deposited linewidth.Type: GrantFiled: December 13, 2004Date of Patent: May 10, 2011Assignee: Optomec Design CompanyInventors: Bruce H. King, Michael J. Renn, Marcelino Essien, Gregory J. Marquez, Manampathy G. Giridharan, Jyh-Cherng Sheu
-
Patent number: 7906836Abstract: An integrated circuit structure includes a first chip including a first edge; and a second chip having a second edge facing the first edge. A scribe line is between and adjoining the first edge and the second edge. A heat spreader includes a portion in the scribe line, wherein the heat spreader includes a plurality of vias and a plurality of metal lines. The portion of the heat spreader in the scribe line has a second length at least close to, or greater than, a first length of the first edge.Type: GrantFiled: December 31, 2008Date of Patent: March 15, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsien-Wei Chen, Yu-Wen Liu, Jyh-Cherng Sheu, Hao-Yi Tsai, Shin-Puu Jeng, Chen-Hua Yu, Shang-Yun Hou
-
Publication number: 20100123219Abstract: An integrated circuit structure includes a first chip including a first edge; and a second chip having a second edge facing the first edge. A scribe line is between and adjoining the first edge and the second edge. A heat spreader includes a portion in the scribe line, wherein the heat spreader includes a plurality of vias and a plurality of metal lines. The portion of the heat spreader in the scribe line has a second length at least close to, or greater than, a first length of the first edge.Type: ApplicationFiled: December 31, 2008Publication date: May 20, 2010Inventors: Hsien-Wei Chen, Yu-Wen Liu, Jyh-Cherng Sheu, Hao-Yi Tsai, Shin-Puu Jeng, Chen-Hua Yu, Shang-Yun Hou
-
Patent number: 7658163Abstract: Methods and apparatus for the deposition of a source material (10) are disclosed. An atomizer (12) renders a supply of source material (10) into many discrete particles. A force applicator (14) propels the particles in continuous, parallel streams of discrete particles. A collimator (16) controls the direction of flight of the particles in the stream prior to their deposition on a substrate (18). In an alternative embodiment of the invention, the viscosity of the particles may be controlled to enable complex depositions of non-conformal or three-dimensional surfaces. The invention also includes a wide variety of substrate treatments which may occur before, during or after deposition. In yet another embodiment of the invention, a virtual or cascade impactor may be employed to remove selected particles from the deposition stream.Type: GrantFiled: July 20, 2006Date of Patent: February 9, 2010Assignee: Optomec Design CompanyInventors: Michael J. Renn, Bruce H. King, Manampathy G. Giridharan, Jyh-Cherng Sheu
-
Publication number: 20090233410Abstract: A method of forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate, wherein the semiconductor substrate and a sidewall of the gate dielectric has a joint point; forming a gate electrode over the gate dielectric; forming a mask layer over the semiconductor substrate and the gate electrode, wherein a first portion of the mask layer adjacent the joint point is at least thinner than a second portion of the mask layer away from the joint point; after the step of forming the mask layer, performing a halo/pocket implantation to introduce a halo/pocket impurity into the semiconductor substrate; and removing the mask layer after the halo/pocket implantation.Type: ApplicationFiled: March 13, 2008Publication date: September 17, 2009Inventors: Chen-Hua Yu, Yihang Chiu, Shu-Tine Yang, Jyh-Cherng Sheu, Chu-Yun Fu, Cheng-Tung Lin
-
Publication number: 20090114151Abstract: Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.Type: ApplicationFiled: January 6, 2009Publication date: May 7, 2009Applicant: OPTOMEC, INC. FKA OPTOMEC DESIGN COMPANYInventors: Michael J. Renn, Bruce H. King, Marcelino Essien, Gregory J. Marquez, Manampathy G. Giridharan, Jyh-Cherng Sheu
-
Patent number: 7485345Abstract: Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.Type: GrantFiled: December 22, 2005Date of Patent: February 3, 2009Assignee: Optomec Design CompanyInventors: Michael J. Renn, Bruce H. King, Marcelino Essien, Gregory J. Marquez, Manampathy G. Giridharan, Jyh-Cherng Sheu
-
Publication number: 20090000769Abstract: A temperature controlled loadlock chamber for use in semiconductor processing is provided. The temperature controlled loadlock chamber may include one or more of an adjustable fluid pump, mass flow controller, one or more temperature sensors, and a controller. The adjustable fluid pump provides fluid having a predetermined temperature to a temperature-controlled plate. The mass flow controller provides gas flow into the chamber that may also aid in maintaining a desired temperature. Additionally, one or more temperature sensors may be combined with the adjustable fluid pump and/or the mass flow controller to provide feedback and to provide a greater control over the temperature. A controller may be added to control the adjustable fluid pump and the mass flow controller based upon temperature readings from the one or more temperature sensors.Type: ApplicationFiled: June 27, 2007Publication date: January 1, 2009Inventors: Chun-Hsien Lin, Jyh-Cherng Sheu, Ming-Feng Yoo, Kewei Zuo
-
Publication number: 20080047578Abstract: An apparatus and method are disclosed for cleaning exhaust lines from a reaction chamber used in manufacturing semiconductor devices. In particular, an apparatus is disclosed for receiving an exhaust gas from a semiconductor processing reaction chamber, mixing said exhaust gas with a cleaning gas, exciting the mixture to a plasma state, and pumping the mixture away via an exhaust line. A vacuum pump is provided for pumping the mixture, and a scrubber may be provided to remove particulate and other matter from the gas mixture. Radio-frequency or microwave energy may be used to excite the gas mixture, and the cleaning gas may comprise argon.Type: ApplicationFiled: August 24, 2006Publication date: February 28, 2008Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Feng Yoo, Jean Wang, Jyh-Cherng Sheu
-
Patent number: 7294366Abstract: A method of depositing various materials onto heat-sensitive targets. Heat-sensitive targets are generally defined as targets that have thermal damage thresholds that are lower than the temperature required to process a deposited material. The invention uses precursor solutions and/or particle or colloidal suspensions, along with optional pre-deposition treatment and/or post-deposition treatment to lower the laser power required to drive the deposit to its final state. The present invention uses Maskless Mesoscale Material Deposition (M3D™) to perform direct deposition of material onto the target in a precise, highly localized fashion. Features with linewidths as small as 4 microns may be deposited, with little or no material waste. A laser is preferably used to heat the material to process it to obtain the desired state, for example by chemical decomposition, sintering, polymerization, and the like.Type: GrantFiled: September 27, 2004Date of Patent: November 13, 2007Assignee: Optomec Design CompanyInventors: Michael J. Renn, Bruce H. King, Marcelino Essien, Manampathy G. Giridharan, Jyh-Cherng Sheu
-
Publication number: 20070181060Abstract: Methods and apparatus for the deposition of a source material (10) are disclosed. An atomizer (12) renders a supply of source material (10) into many discrete particles. A force applicator (14) propels the particles in continuous, parallel streams of discrete particles. A collimator (16) controls the direction of flight of the particles in the stream prior to their deposition on a substrate (18). In an alternative embodiment of the invention, the viscosity of the particles may be controlled to enable complex depositions of non-conformal or three-dimensional surfaces. The invention also includes a wide variety of substrate treatments which may occur before, during or after deposition. In yet another embodiment of the invention, a virtual or cascade impactor may be employed to remove selected particles from the deposition stream.Type: ApplicationFiled: July 20, 2006Publication date: August 9, 2007Applicant: Optomec Design CompanyInventors: Michael Renn, Bruce King, Manampathy Giridharan, Jyh-Cherng Sheu
-
Publication number: 20070068803Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.Type: ApplicationFiled: June 29, 2006Publication date: March 29, 2007Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Li Hsiao, Jerry Hwang, Jyh-Cherng Sheu, Lawrance Sheu, Jean Wang, Chen-Hua Yu
-
Publication number: 20070019028Abstract: A method of depositing various materials onto heat-sensitive targets, particularly oxygen-sensitive materials. Heat-sensitive targets are generally defined as targets that have thermal damage thresholds that are lower than the temperature required to process a deposited material. The invention uses precursor solutions and/or particle or colloidal suspensions, along with optional pre-deposition treatment and/or post-deposition treatment to lower the laser power required to drive the deposit to its final state. The present invention uses Maskless Mesoscale Material Deposition (M3D™) to perform direct deposition of material onto the target in a precise, highly localized fashion. Features with linewidths as small as 4 microns may be deposited, with little or no material waste. A laser is preferably used to heat the material to process it to obtain the desired state, for example by chemical decomposition, sintering, polymerization, and the like.Type: ApplicationFiled: May 8, 2006Publication date: January 25, 2007Applicant: Optomec Design CompanyInventors: Michael Renn, Bruce King, Marcelino Essien, Manampathy Giridharan, Jyh-Cherng Sheu
-
Publication number: 20060233953Abstract: Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.Type: ApplicationFiled: December 22, 2005Publication date: October 19, 2006Applicant: Optomec Design CompanyInventors: Michael Renn, Bruce King, Marcelino Essien, Gregory Marquez, Manampathy Giridharan, Jyh-Cherng Sheu
-
Publication number: 20060008590Abstract: Method and apparatus for improved maskless deposition of electronic and biological materials using an extended nozzle. The process is capable of direct deposition of features with linewidths varying from a few microns to a fraction of a millimeter, and can be used to deposit features on targets with damage thresholds near 100° C. or less. Deposition and subsequent processing may be performed under ambient conditions and produce linewidths as low as 1 micron, with sub-micron edge definition. The extended nozzle reduces particle overspray and has a large working distance; that is, the orifice to target distance may be several millimeters or more, enabling direct write onto non-planar surfaces. The nozzle allows for deposition of features with linewidths that are approximately as small as one-twentieth the size of the nozzle orifice diameter, and is preferably interchangeable, enabling rapid variance of deposited linewidth.Type: ApplicationFiled: December 13, 2004Publication date: January 12, 2006Applicant: Optomec Design CompanyInventors: Bruce King, Michael Renn, Marcelino Essien, Gregory Marquez, Manampathy Giridharan, Jyh-Cherng Sheu