Patents by Inventor Jyh HSIEH
Jyh HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11263192Abstract: Embodiments of the present invention provide a computer system, a computer program product, and a method that comprises generating a context data tree for each variable in a plurality of variables based on a received input; determining data folding points for each generated context data tree; conducting a hyper-folding process on the determined data folding points in each context data tree, wherein the hyper-folding process converts each generated context data tree into a single data tree; and automatically loading the single data tree into an application.Type: GrantFiled: November 18, 2019Date of Patent: March 1, 2022Assignee: International Business Machines CorporationInventors: Chiwen Chang, Hsiang Chang, Ming Jyh Hsieh
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Publication number: 20210149864Abstract: Embodiments of the present invention provide a computer system, a computer program product, and a method that comprises generating a context data tree for each variable in a plurality of variables based on a received input; determining data folding points for each generated context data tree; conducting a hyper-folding process on the determined data folding points in each context data tree, wherein the hyper-folding process converts each generated context data tree into a single data tree; and automatically loading the single data tree into an application.Type: ApplicationFiled: November 18, 2019Publication date: May 20, 2021Inventors: Chiwen Chang, Hsiang Chang, Ming Jyh Hsieh
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Patent number: 10610190Abstract: Provided is a portable medical device including a drive motor configured to provide power to move the portable medical device; at least one camera configured to capture an image of a periphery of the portable medical device; an ultrasonic sensor configured to emit an ultrasonic signal to the periphery of the portable medical device and detect the ultrasonic signal reflected from a first obstacle located in the periphery of the portable medical device; a torque sensor configured to detect a torque value of the drive motor; a processor configured to generate information about the first obstacle based on the image captured by the at least one camera and/or the detected ultrasonic signal and calculate an expected movement path of the portable medical device based on the torque value detected by the torque sensor; and a display configured to display a periphery image using the image captured by the at least one camera, the information about the first obstacle, and the expected movement path of the portable medicalType: GrantFiled: October 11, 2017Date of Patent: April 7, 2020Assignee: Samsung Electronics Co., Ltd.Inventor: Jong-jyh Hsieh
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Publication number: 20180330818Abstract: A method, performed by an electronic device, of providing configuration information related to image scanning to a medical device includes obtaining identification information of the medical device and a list of a plurality of configuration information corresponding to information of an examinee; identifying first configuration information from the list of the plurality of configuration information as recommendation information based on a negative index; and displaying the first configuration information identified as the recommendation information on a display.Type: ApplicationFiled: May 10, 2018Publication date: November 15, 2018Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-jyh HSIEH, Woong LEE
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Publication number: 20180110494Abstract: Provided is a portable medical device including a drive motor configured to provide power to move the portable medical device; at least one camera configured to capture an image of a periphery of the portable medical device; an ultrasonic sensor configured to emit an ultrasonic signal to the periphery of the portable medical device and detect the ultrasonic signal reflected from a first obstacle located in the periphery of the portable medical device; a torque sensor configured to detect a torque value of the drive motor; a processor configured to generate information about the first obstacle based on the image captured by the at least one camera and/or the detected ultrasonic signal and calculate an expected movement path of the portable medical device based on the torque value detected by the torque sensor; and a display configured to display a periphery image using the image captured by the at least one camera, the information about the first obstacle, and the expected movement path of the portable medicalType: ApplicationFiled: October 11, 2017Publication date: April 26, 2018Inventor: Jong-jyh HSIEH
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Publication number: 20170312754Abstract: A crushing apparatus includes a tank including a first aperture and a second aperture, a first blower around the first aperture, a grinder disposed within the tank, a separating device including a first hole connected to the second aperture, and a second hole, and a second blower disposed around the second hole.Type: ApplicationFiled: April 29, 2016Publication date: November 2, 2017Inventors: Bao-Hung HUANG, Lin-Shyang TZENG, Chung-Jen CHEN, Yi-Chieh TSAI, Jyh HSIEH, Chun Che HSIEH
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Patent number: 9513552Abstract: A composite mask suitable for multiple-patterning lithographic processes and a multiple-patterning photolithographic process utilizing the mask are disclosed. An exemplary embodiment includes receiving a mask having a plurality of sub-reticles and a substrate having one or more regions. A first sub-reticle of the plurality of sub-reticles is aligned with a first region of the one or more regions. A movement pattern is designated relative to the substrate. A first photolithographic process is performed including exposing the substrate using the mask to form a first exposed area on the substrate. An alignment of the mask relative to the substrate is shifted according to a first direction determined by the movement pattern. A second photolithographic process is performed including exposing the substrate using the mask to form a second exposed area on the substrate such that the second exposed area overlaps the first.Type: GrantFiled: March 23, 2015Date of Patent: December 6, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chue San Yoo, Chang-Jyh Hsieh, Li-Wei Kung, Yung-Cheng Chen
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Publication number: 20150198887Abstract: A composite mask suitable for multiple-patterning lithographic processes and a multiple-patterning photolithographic process utilizing the mask are disclosed. An exemplary embodiment includes receiving a mask having a plurality of sub-reticles and a substrate having one or more regions. A first sub-reticle of the plurality of sub-reticles is aligned with a first region of the one or more regions. A movement pattern is designated relative to the substrate. A first photolithographic process is performed including exposing the substrate using the mask to form a first exposed area on the substrate. An alignment of the mask relative to the substrate is shifted according to a first direction determined by the movement pattern. A second photolithographic process is performed including exposing the substrate using the mask to form a second exposed area on the substrate such that the second exposed area overlaps the first.Type: ApplicationFiled: March 23, 2015Publication date: July 16, 2015Inventors: Chue San Yoo, Chang-Jyh Hsieh, Li-Wei Kung, Yung-Cheng Chen
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Patent number: 8986911Abstract: A composite mask suitable for multiple-patterning lithographic processes and a multiple-patterning photolithographic process utilizing the mask are disclosed. An exemplary embodiment includes receiving a mask having a plurality of sub-reticles and a substrate having one or more regions. A first sub-reticle of the plurality of sub-reticles is aligned with a first region of the one or more regions. A movement pattern is designated relative to the substrate. A first photolithographic process is performed including exposing the substrate using the mask to form a first exposed area on the substrate. An alignment of the mask relative to the substrate is shifted according to a first direction determined by the movement pattern. A second photolithographic process is performed including exposing the substrate using the mask to form a second exposed area on the substrate such that the second exposed area overlaps the first.Type: GrantFiled: December 20, 2012Date of Patent: March 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chue San Yoo, Yung-Cheng Chen, Li-Wei Kung, Chang-Jyh Hsieh
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Publication number: 20140178803Abstract: A composite mask suitable for multiple-patterning lithographic processes and a multiple-patterning photolithographic process utilizing the mask are disclosed. An exemplary embodiment includes receiving a mask having a plurality of sub-reticles and a substrate having one or more regions. A first sub-reticle of the plurality of sub-reticles is aligned with a first region of the one or more regions. A movement pattern is designated relative to the substrate. A first photolithographic process is performed including exposing the substrate using the mask to form a first exposed area on the substrate. An alignment of the mask relative to the substrate is shifted according to a first direction determined by the movement pattern. A second photolithographic process is performed including exposing the substrate using the mask to form a second exposed area on the substrate such that the second exposed area overlaps the first.Type: ApplicationFiled: December 20, 2012Publication date: June 26, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chue San Yoo, Yung-Cheng Chen, Li-Wei Kung, Chang-Jyh Hsieh
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Patent number: 8650511Abstract: The present disclosure provides for many different embodiments. A mask fabrication method and system is provided. The method and system identify critical areas of an integrated circuit (IC) design layout that has undergone optical proximity correction. The critical areas are areas of the OPCed IC design layout that are at risk for hot spots. A lithography process check is then performed on the critical areas of the OPCed IC design layout.Type: GrantFiled: April 30, 2010Date of Patent: February 11, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Ta Lu, Peng-Ren Chen, Dong-Hsu Cheng, Chang-Jyh Hsieh
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Publication number: 20110271239Abstract: The present disclosure provides for many different embodiments. A mask fabrication method and system is provided. The method and system identify critical areas of an integrated circuit (IC) design layout that has undergone optical proximity correction. The critical areas are areas of the OPCed IC design layout that are at risk for hot spots. A lithography process check is then performed on the critical areas of the OPCed IC design layout.Type: ApplicationFiled: April 30, 2010Publication date: November 3, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chi-Ta Lu, Peng-Ren Chen, Dong-Hsu Cheng, Chang-Jyh Hsieh
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Patent number: 7297450Abstract: An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.Type: GrantFiled: April 25, 2006Date of Patent: November 20, 2007Assignee: United Microelectronics Corp.Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
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Publication number: 20060183031Abstract: An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.Type: ApplicationFiled: April 25, 2006Publication date: August 17, 2006Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
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Patent number: 7063923Abstract: An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.Type: GrantFiled: September 1, 2004Date of Patent: June 20, 2006Assignee: United Electronics Corp.Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
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Publication number: 20050009344Abstract: An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.Type: ApplicationFiled: September 1, 2004Publication date: January 13, 2005Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
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Publication number: 20040194050Abstract: An optical proximity correction (OPC) method first provides a predetermined integrated circuit layout. The integrated circuit layout is then formed on a surface of a photo-mask, and a plurality of nonprintable dummy patterns are formed outside the integrated circuit layout on the surface of the photo-mask. The plurality of dummy patterns are used to reduce the difference in pattern density on the surface of the photo-mask so as to modify optical proximity effect, and the dummy patterns are not transferred to a photoresist layer formed on a semiconductor wafer during a photolithography process.Type: ApplicationFiled: April 2, 2004Publication date: September 30, 2004Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
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Patent number: 6767679Abstract: The present invention is provided a method to use a pattern section without extra serif to correct the polygon feature pattern with at least one inner corner. Such that the polygon feature pattern with at least one inner corner can achieve effectively OPC (optical proximity correction) without adding any extra data point. Therefore, the present invention can instead of the conventional serif and achieves the effective OPC. In addition, the mask writing time is also improved since the original feature pattern is divided into a few rectangular-shaped mask writing units or trapeze-shaped mask writing units for regular mask writing, and the inner corner is/are not in the middle of each divided mask writing units. The mask inspection is also simplified and easier to calibration since a simple geometry other than complex serif is used.Type: GrantFiled: January 2, 2002Date of Patent: July 27, 2004Assignee: United Microelectronics Corp.Inventors: Chang-Jyh Hsieh, Jiunn-Ren Hwang, Jui-Tsen Huang
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Publication number: 20040009409Abstract: An optical proximity correction (OPC) method first provides a predetermined integrated circuit layout. The integrated circuit layout is then formed on a surface of a photo-mask, and a plurality of nonprintable dummy patterns are formed outside the integrated circuit layout on the surface of the photo-mask. The plurality of dummy patterns are used to reduce the difference in pattern density on the surface of the photo-mask so as to modify optical proximity effect, and the dummy patterns are not transferred to a photoresist layer formed on a semiconductor wafer during a photolithography process.Type: ApplicationFiled: July 11, 2002Publication date: January 15, 2004Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
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Patent number: 6638664Abstract: A method of correcting an optical mask pattern. A third pattern having a first strip-like pattern and a second strip-like pattern is provided. The first strip-like pattern attaches to the mid-section of the second strip-like pattern. A first modification step is conducted. A pair of assistant patterns is added to the respective sides of the first strip-like pattern to form a first modified pattern. A second modification step is conducted to shrink a portion of the first strip-like pattern to form a second modified pattern. Dimension in the reduced portion of the first strip-like pattern is a critical dimension of a main pattern. A third modification step is conducted using an optical proximity correction method. The second modified pattern is modified to a third modified pattern.Type: GrantFiled: September 18, 2001Date of Patent: October 28, 2003Assignee: United Microelectronics Corp.Inventors: Chang-Jyh Hsieh, Jiunn-Ren Hwang, Kuei-Chun Hung, Chien-Ming Wang