Patents by Inventor Jyh HSIEH

Jyh HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030124441
    Abstract: The present invention is provided a method to use a pattern section without extra serif to correct the polygon feature pattern with at least one inner corner. Such that the polygon feature pattern with at least one inner corner can achieve effectively OPC (optical proximity correction) without adding any extra data point. Therefore, the present invention can instead of the conventional serif and achieves the effective OPC. In addition, the mask writing time is also improved since the original feature pattern is divided into a few rectangular-shaped mask writing units or trapeze-shaped mask writing units for regular mask writing, and the inner corner is/are not in the middle of each divided mask writing units. The mask inspection is also simplified and easier to calibration since a simple geometry other than complex serif is used.
    Type: Application
    Filed: January 2, 2002
    Publication date: July 3, 2003
    Applicant: United Microelectronics Corp.
    Inventors: Chang-Jyh Hsieh, Jiunn-Ren Hwang, Jui-Tsen Huang
  • Publication number: 20030039892
    Abstract: A method of optical proximity correction. The method at least includes the following steps. First of all, a transparent plate is provided, an opaque film is formed on the transparent plate, wherein the opaque film pattern is a polygon. Finally, at least a serif is added on a line-end of the polygon by using optical proximity correction, wherein the line-end does not include non-90 degree corner.
    Type: Application
    Filed: August 16, 2001
    Publication date: February 27, 2003
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chang-Jyh Hsieh, Pen-Li Lin, Ming-Jui Chen
  • Publication number: 20020182550
    Abstract: A method of correcting an optical mask pattern. A third pattern having a first strip-like pattern and a second strip-like pattern is provided. The first strip-like pattern attaches to the mid-section of the second strip-like pattern. A first modification step is conducted. A pair of assistant patterns is added to the respective sides of the first strip-like pattern to form a first modified pattern. A second modification step is conducted to shrink a portion of the first strip-like pattern to form a second modified pattern. Dimension in the reduced portion of the first strip-like pattern is a critical dimension of a main pattern. A third modification step is conducted using an optical proximity correction method. The second modified pattern is modified to a third modified pattern.
    Type: Application
    Filed: September 18, 2001
    Publication date: December 5, 2002
    Inventors: Chang-Jyh Hsieh, Jiunn-Ren Hwang, Kuei-Chun Hung, Chien-Ming Wang
  • Patent number: 5091274
    Abstract: The present invention provides an ionic conducting polymer electrolyte which is a complex compound prepared from an alkali metal salt and a side-chain liquid crystalline polysiloxane of the formula ##STR1## wherein Me=--CH.sub.3 ; m is an integer of 1-5; x=10-100%, y=O-90%; and Mw(polysiloxane backbone)=1,000-15,000.
    Type: Grant
    Filed: June 19, 1990
    Date of Patent: February 25, 1992
    Assignee: National Science Council
    Inventors: Ging-Ho Hsiue, Chain-Shu Hsu, Chang-Jyh Hsieh, Deng-Shan Chen