Abstract: A heat exchanger integrated assembly and a manufacturing method thereof are provided. The heat exchanger integrated assembly includes a heat exchanger, a mating portion and an adaptor, wherein the heat exchanger includes a first inlet and a first outlet; the mating portion includes a first side, a second side and a first hole and a second hole passing through the first side and the second side, and the mating portion further includes a first recessed portion formed on the first side and in communication with the first hole; and the adaptor includes a first passage in communication with the first hole and in communication with the first inlet via the first recessed portion, and a second passage in communication with the first outlet via the second hole. The heat exchanger is integrated with other parts and is connected to an expansion valve directly.

Abstract: A connecting member includes a first component and a second component fixed to each other, the first component includes a first mounting wall and a first area formed by denting from the first mounting wall, the second component includes a second mounting wall, a second area and a third area, the second mounting wall and the first mounting wall are hermetically fixed, the second area and the third area are both formed by denting from the second mounting wall, and the second area and the third area are arranged with space and are in communication with the first area; the second component further includes a first slot extending through the second area and a second slot extending through the third area, and the first slot and the second slot are provided for communication of the circulating tubes of the heat exchanger.

Abstract: A heat exchanger includes a first header pipe, a second header pipe, a third header pipe, a fourth header pipe and a plurality of flat tubes, the first header pipe is provided with a first space and a second space and a communicating passage for communicating the first space with the second space; when refrigerant flows from the first space of the first header pipe to the second header pipe along the flat tubes, a part of the refrigerant passes through the communicating passage and directly enters into the second space of the first header pipe, thus an overall flow resistance of the heat exchanger may be decreased to some extent. Besides, the flow quantity of the refrigerant in the third flow path is constant, however fluid state parameters may change, which may greatly improve the heat exchange capacity of the third flow path, thereby improving the heat exchange performance of the heat exchanger on the whole.

Abstract: A heat exchanger and fins thereof are provided. The fin includes a plurality of first fin units and a plurality of second fin units which are arranged in parallel and alternately, and each first fin unit includes a first louver facing an inflow direction of fluid, and each second fin unit includes a second louver facing the inflow direction of the fluid, the first louver and the second louver are arranged in parallel, and the first louver and the second louver are staggered in the inflow direction of the fluid to form a first space between the first louver and the second louver, and at least one of first louvers or at least one of second louvers has a varied width.

Abstract: Amongst the candidates for very high efficiency solid state light sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group IIIA-nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. According to other embodiments of the invention self-organizing dot-within-a-dot nanowire and dot-within-a-dot-within-a-well nanowire structures are presented.

Abstract: Methods of inhibiting cancer cell growth using HDAC10 inhibitors are provided. Methods of treating cancer in a subject using HDAC10 inhibitors are also provided. In certain embodiments, at least one second inhibitor selected from an autophagy inhibitor, an AMPK inhibitor, and methyl pyruvate is also used in the methods. Dose packs comprising HDAC10 inhibitors and at least one second inhibitor are provided. Methods of identifying HDAC10 inhibitors are also provided.

Abstract: Amongst the candidates for very high efficiency solid state light sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group IIIA-nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. According to other embodiments of the invention self-organizing dot-within-a-dot nanowire and dot-within-a-dot-within-a-well nanowire structures are presented.

Abstract: Methods of inhibiting cancer cell growth using HDAC10 inhibitors are provided. Methods of treating cancer in a subject using HDAC10 inhibitors are also provided. In certain embodiments, at least one second inhibitor selected from an autophagy inhibitor, an AMPK inhibitor, and methyl pyruvate is also used in the methods. Dose packs comprising HDAC10 inhibitors and at least one second inhibitor are provided. Methods of identifying HDAC10 inhibitors are also provided.