Abstract: A light-emitting element, a manufacturing method thereof, and a package structure are provided. The light-emitting element includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, and a convex lens structure disposed on the second semiconductor layer. The convex lens structure includes a plurality of microlenses. The microlenses and the second semiconductor layer are integrally formed and have the same material. The radius of curvature of one of the microlenses is 0.2 ?m to 5.0 ?m, and the light-emission angle of the light-emitting element is 100° to 110°.

Abstract: A detection element of biological subcutaneous features and a wearable device thereof are provided. The element for detecting biological subcutaneous features has a substrate, a light-detecting semiconductor chip, a grid structure, and a cover. The light-detecting semiconductor chip is located on the substrate for detecting red light or near-infrared light signals. The grid structure including a plurality of opaque light-absorbing blocking walls is located on the light-detecting semiconductor chip for blocking side light and increasing the proportion of near-vertical incident light. The cover is located on the grid structure and serves as a protection lid. The wearable device for detecting biological subcutaneous features has more than one light source of red light or near-infrared light and a plurality of detection elements. The arrangement of the opaque light-absorbing blocking walls that are parallel to each other are substantially parallel to the light-emitting directions of the light source.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

Abstract: An optical detection apparatus includes a substrate, a light source, a light sensor, a light-guiding structure. The substrate has a top surface. The light source on the top surface is configured to generate detection light toward an object over the light source. The light sensor is located on the top surface. The light-guiding structure is above the top surface and at least partially above the light source. A central axis of the light-guiding structure is vertical to the top surface, and the light source and the light sensor are at opposite sides relative to the central axis. The light-guiding structure is configured to deflect the detection light from one of the opposite sides at which the light source is located to another one of the opposite side at which the light sensor is located, such that the detection light reflected by the object moves toward the light sensor.

Abstract: The present disclosure provides a compound shown as formula (I), formula (II), which is used to prepare a radiocontrast tracer that can target binding to Tau protein.

Abstract: According to the disclosure, a photodiode package structure is provided. The photodiode package structure includes a substrate, a photodiode chip on the substrate, a plurality of shutters above the photodiode chip, and a seal member covering the substrate and the photodiode chip, in which the shutters are embedded in the seal member.

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: An optical detection apparatus includes a substrate, a light source, a light sensor, a light-guiding structure. The substrate has a top surface. The light source on the top surface is configured to generate detection light toward an object over the light source. The light sensor is located on the top surface. The light-guiding structure is above the top surface and at least partially above the light source. A central axis of the light-guiding structure is vertical to the top surface, and the light source and the light sensor are at opposite sides relative to the central axis. The light-guiding structure is configured to deflect the detection light from one of the opposite sides at which the light source is located to another one of the opposite side at which the light sensor is located, such that the detection light reflected by the object moves toward the light sensor.

Abstract: The present invention discloses a series of nuclear medicine tracers that are combined with brain microtubule-associated protein Tau targeting compounds to produce a group of compounds of nuclear medicine that can be utilized for imaging of microtubule-associated protein Tau. When the positrons released by the decay encounter the electrons of the cells in the sample, utilizing the positron decay characteristics of fluorine-18 or iodine-124 isotope to generate mutual destruction reactions, a pair of opposite gamma rays is formed which are imaged by positron emission tomography. The compounds can be applied for the in vivo detection of microtubule-associated protein Tau deposits in the brain. The invention provides a strategy for diagnosis of Alzheimer's disease and a method to measure the efficacy of therapeutic drugs targeting microtubule-associated protein Tau.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: According to the disclosure, a photodiode package structure is provided. The photodiode package structure includes a substrate, a photodiode chip on the substrate, a plurality of shutters above the photodiode chip, and a seal member covering the substrate and the photodiode chip, in which the shutters are embedded in the seal member.

Abstract: A system and method for monitoring cardiovascular and brain functions in combination with a physiological detection device, which uses a smart wearable device to detect physiological data such as heart rate and pulse pressure of a user, and transmits the physiological data to an arithmetic function. An electronic device in which a preset function and a calculation formula are built in, and the physiological data can be converted into corresponding determination parameters to monitor the possibility and risk of cardiovascular diseases and neurodegenerative diseases.

Abstract: A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.

Abstract: A system and method for monitoring cardiovascular and brain functions in combination with a physiological detection device, which uses a smart wearable device to detect physiological data such as heart rate and pulse pressure of a user, and transmits the physiological data to an arithmetic function. An electronic device in which a preset function and a calculation formula are built in, and the physiological data can be converted into corresponding determination parameters to monitor the possibility and risk of cardiovascular diseases and neurodegenerative diseases.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

Abstract: A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.