Kai-Jiun Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A dynamic random access memory (DRAM) device includes a substrate, plural word lines and plural bit lines. The word lines are disposed in the substrate along a first trench extending along a first direction. Each of the word lines includes a multi-composition barrier layer, wherein the multi-composition barrier layer includes TiSixNy with x and y being greater than 0 and the multi-composition barrier layer is silicon-rich at a bottom portion thereof and is nitrogen-rich at a top portion thereof. The bit lines are disposed over the word lines and extended along a second direction across the first direction.
September 21, 2016
Date of Patent:
September 5, 2017
UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.